公开(公告)号：WO2012126684A1

公开(公告)日：2012-09-27

申请号：PCT/EP2012/052862

申请日：2012-02-20

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

Inventor： VAN DER SCHAAR, Maurits ,  WARNAAR, Patrick ,  BHATTACHARYYA, Kaustuve ,  SMILDE, Hendrik ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F9/7042 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  H01L23/544 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品特征和计量目标。 计量目标包括测量重叠的大目标和小目标。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线之内，而小目标则分布在产品区域内。

公开(公告)号：WO2012062858A1

公开(公告)日：2012-05-18

申请号：PCT/EP2011/069845

申请日：2011-11-10

Applicant: ASML NETHERLANDS B.V. ,  SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

Inventor： SMILDE, Hendrik ,  BLEEKER, Arno ,  COENE, Willem ,  KUBIS, Michael ,  WARNAAR, Patrick

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G03F7/70483 ,  G03F7/70625 ,  G03F7/70641 ,  G06N99/005

Abstract: Methods are disclosed for measuring target structures (32-35) formed by a lithographic process on a substrate (W). A grating structure within said target is smaller than an illumination spot (31) and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor (19) and a second branch leading to a substrate plane imaging sensor (23). A spatial light modulator (SLM) (24, 124, 224, 324) is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.

Abstract translation: 公开了用于测量由基板（W）上的光刻工艺形成的目标结构（32-35）的方法。 所述目标内的光栅结构小于测量光学系统的照明光点（31）和视场。 光学系统具有通向光瞳平面成像传感器（19）的第一分支和通向基板平面成像传感器（23）的第二分支。 空间光调制器（SLM）（24,124,224,324）被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。

公开(公告)号：WO2013026598A1

公开(公告)日：2013-02-28

申请号：PCT/EP2012/062555

申请日：2012-06-28

Applicant: ASML NETHERLANDS B.V. ,  WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

Inventor： WARNAAR, Patrick ,  VAN SCHIJNDEL, Mark ,  KUBIS, Michael

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F1/44 ,  G03F7/70683

Abstract: A target structure including one or more periodic structures is formed on a substrate by a lithographic process. A image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from at least one region of interest within the image are used to determine a property of the periodic structure, for example asymmetry or overlay. To locate the ROI, a processing unit recognizes locations of a plurality of boundary features in the image of the target structure. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the ROI is greater than by recognizing only the boundaries of the periodic structure(s). The boundary features can be created by providing interruptions in a boundary region of the periodic structure. Regions of interest can be located in X and Y directions simultaneously, and with diffraction in X and Y directions simultaneously.

Abstract translation: 通过光刻工艺在衬底上形成包括一个或多个周期结构的靶结构。 在用辐射束照射目标结构的同时检测目标结构的图像，该图像使用非零次衍射辐射的第一部分形成，同时排除零级衍射辐射。 使用从图像内的至少一个感兴趣区域提取的强度值来确定周期性结构的属性，例如不对称或覆盖。 为了定位ROI，处理单元识别目标结构的图像中的多个边界特征的位置。 每个方向上边界特征的数量至少是目标结构内周期性结构边界数量的两倍。 定位ROI的准确性大于仅识别周期性结构的边界。 可以通过在周期性结构的边界区域中提供中断来创建边界特征。 感兴趣区域可以同时位于X和Y方向，同时在X和Y方向衍射。

公开(公告)号：WO2012010458A1

公开(公告)日：2012-01-26

申请号：PCT/EP2011/061822

申请日：2011-07-12

Applicant: ASML NETHERLANDS B.V. ,  VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

Inventor： VAN DER SCHAAR, Maurits ,  DEN BOEF, Arie ,  FUCHS, Andreas ,  COOGANS, Martyn ,  BHATTACHARYYA, Kaustuve ,  KUBIS, Michael ,  MORGAN, Stephen

IPC: G03F7/20

CPC classification number: A01H1/06 ,  A01G22/00 ,  C12N15/8201 ,  G03B27/52 ,  G03B27/53 ,  G03F7/705 ,  G03F7/70633

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p (n'), p (n'') and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract translation: 确定重叠错误的方法。 测量具有过程引起的不对称性的覆盖目标。 构建目标模型。 修改模型，例如通过移动结构之一来补偿不对称性。 使用修改的模型计算不对称引起的覆盖误差。 通过从测量的重叠错误中减去不对称引起的覆盖误差来确定生产目标中的重叠错误。 在一个示例中，通过改变不对称p（n'），p（n“）修改模型，并且对于多个散射仪测量配方重复计算不对称引起的重叠误差，并且确定叠加误差的步骤 生产目标使用计算的不对称引起的重叠误差来选择用于测量生产目标的最佳散射仪测量配方。

公开(公告)号：WO2011012624A1

公开(公告)日：2011-02-03

申请号：PCT/EP2010/060894

申请日：2010-07-27

Applicant: ASML Netherlands B.V. ,  CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

Inventor： CRAMER, Hugo ,  DEN BOEF, Arie ,  MEGENS, Henricus ,  SMILDE, Hendrik ,  SCHELLEKENS, Adrianus ,  KUBIS, Michael

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation, the first image being formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在衬底上形成结构，该结构具有至少一个特征，该特征在印刷轮廓中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像，第一图像使用非零次衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。