公开(公告)号：WO2004061859A2

公开(公告)日：2004-07-22

申请号：PCT/US2003/023198

申请日：2003-07-24

Applicant: DEHON, Andre' ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

Inventor： DEHON, Andre' ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

IPC: G11C13/02

CPC classification number: H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

Abstract: A method for controlling electric conduction on nanoscale wires is disclosed.The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types.For example, a first type of controllable region can exhibit a different dopingfrom a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independentlyselected.

Abstract translation: 公开了一种用于控制纳米尺寸导线上的导电的方法。纳米尺寸线材设有轴向和/或径向分布的可控区域。 通过微细线或额外的纳米线控制这些区域可以允许或防止受控纳米尺寸导线上的电导。 可控区域有两种不同的类型。例如，第一类型的可控区域可以表现出与第二类型可控区域不同的掺杂。 该方法允许独立地选择以亚光刻间距包装的一组纳米级线。

公开(公告)号：WO2004061859A3

公开(公告)日：2005-02-03

申请号：PCT/US0323198

申请日：2003-07-24

Applicant: CALIFORNIA INST OF TECHN ,  HARVARD COLLEGE ,  STANFORD RES INST INT ,  UNIV BROWN ,  DEHON ANDRE ,  LIEBER CHARLES M ,  LINCOLN PATRICK D ,  SAVAGE JOHN

Inventor： DEHON ANDRE ,  LIEBER CHARLES M ,  LINCOLN PATRICK D ,  SAVAGE JOHN

IPC: G11C13/00 ,  G11C8/10 ,  G11C13/02 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L27/10 ,  H01L29/06 ,  H01L49/00

CPC classification number: H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

Abstract: A method for controlling electric conduction on nanoscale wires is disclosed.The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types.For example, a first type of controllable region can exhibit a different dopingfrom a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independentlyselected.

Abstract translation: 公开了一种用于控制纳米尺寸导线上的导电的方法。纳米尺寸线材设有轴向和/或径向分布的可控区域。 通过微细线或额外的纳米线控制这些区域可以允许或防止受控纳米尺寸导线上的电导。 可控区域具有两种不同类型。例如，第一类型的可控区域可以表现出与第二类型可控区域不同的掺杂。 该方法允许独立地选择以亚光刻间距包装的一组纳米级线。

公开(公告)号：WO2007143662A3

公开(公告)日：2007-12-13

申请号：PCT/US2007/070437

申请日：2007-06-05

Applicant: SRI INTERNATIONAL ,  PELRINE, Ronald, E. ,  PRAHLAD, Harsha ,  KORNBLUH, Roy, D. ,  LINCOLN, Patrick, D. ,  STANFORD, Scott

Inventor： PELRINE, Ronald, E. ,  PRAHLAD, Harsha ,  KORNBLUH, Roy, D. ,  LINCOLN, Patrick, D. ,  STANFORD, Scott

IPC: H01L21/683

Abstract: Descriπbed herein is electroadhesion technology that permits controllable adherence between two objects Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes (18) in an electroadhesive device The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall (16), the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.

公开(公告)号：WO2007143662A2

公开(公告)日：2007-12-13

申请号：PCT/US2007070437

申请日：2007-06-05

Applicant: STANFORD RES INST INT ,  PELRINE RONALD E ,  PRAHLAD HARSHA ,  KORNBLUH ROY D ,  LINCOLN PATRICK D ,  STANFORD SCOTT

Inventor： PELRINE RONALD E ,  PRAHLAD HARSHA ,  KORNBLUH ROY D ,  LINCOLN PATRICK D ,  STANFORD SCOTT

IPC: G03G15/02

CPC classification number: B62D57/024 ,  B62D57/00 ,  H02N13/00

Abstract: Described herein is electroadhesion technology that permits controllable adherence between two objects. Electroadhesion uses electrostatic forces of attraction produced by an electrostatic adhesion voltage, which is applied using electrodes in an electroadhesive device. The electrostatic adhesion voltage produces an electric field and electrostatic adherence forces. When the electroadhesive device and electrodes are positioned near a surface of an object such as a vertical wall, the electrostatic adherence forces hold the electroadhesive device in position relative to the surface and object. This can be used to increase traction or maintain the position of the electroadhesive device relative to a surface. Electric control of the electrostatic adhesion voltage permits the adhesion to be controllably and readily turned on and off.

Abstract translation: 这里描述了允许两个物体之间的可控制粘附的电粘附技术。 电粘附使用通过电粘合装置中的电极施加的静电粘附电压产生的静电吸引力。 静电粘附电压产生电场和静电附着力。 当电粘合装置和电极位于诸如垂直壁的物体的表面附近时，静电附着力将电粘合装置保持在相对于表面和物体的适当位置。 这可以用于增加牵引力或者保持电子粘合装置相对于表面的位置。 静电粘附电压的电控制允许粘附被可控地容易地打开和关闭。

公开(公告)号：WO2004034467A3

公开(公告)日：2004-08-26

申请号：PCT/US0323199

申请日：2003-07-24

Applicant: DEHON ANDRE ,  LIEBER CHARLES M ,  LINCOLN PATRICK D ,  SAVAGE JOHN

Inventor： DEHON ANDRE ,  LIEBER CHARLES M ,  LINCOLN PATRICK D ,  SAVAGE JOHN

IPC: G11C13/00 ,  G11C8/10 ,  G11C13/02 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522 ,  H01L27/10 ,  H01L29/06 ,  H01L49/00

CPC classification number: H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

Abstract: A memory array comprising nanoscale wires (61-72) is disclosed. The nanoscale wiresare addressed by means of controllable regions (80, 82) axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires andmicroscale wires. In a two-dimensional emobdiment, memory locations (75) aredefined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing pointsbetween nanoscale wires located in different vertical layers.

Abstract translation: 公开了一种包括纳米级线（61-72）的存储器阵列。 纳米尺度线通过沿着纳米线的轴向和/或径向分布的可控区域（80,82）来寻址。 在一维实施例中，存储器位置由纳米尺寸线和微尺寸线之间的交叉点限定。 在二维实验中，存储器位置（75）由垂直的纳米线之间的交叉点定义。 在三维实施例中，存储器位置由位于不同垂直层中的纳米线之间的交叉点定义。

公开(公告)号：WO2004034467A2

公开(公告)日：2004-04-22

申请号：PCT/US2003/023199

申请日：2003-07-24

Applicant: DEHON, Andre' ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

Inventor： DEHON, Andre' ,  LIEBER, Charles, M. ,  LINCOLN, Patrick, D. ,  SAVAGE, John

IPC: H01L27/00

CPC classification number: H01L49/00 ,  B82Y10/00 ,  G11C8/10 ,  G11C13/0023 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/81 ,  H01L23/522 ,  H01L27/101 ,  H01L29/0665 ,  H01L29/0673 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/943 ,  H01L2924/00

Abstract: A memory array comprising nanoscale wires is disclosed. The nanoscale wiresare addressed by means of controllable regions axially and/or radiallydistributed along the nanoscale wires. In a one-dimensional embodiment, memory locations are defined by crossing points between nanoscale wires andmicroscale wires. In a two-dimensional emobdiment, memory locations aredefined by crossing points between perpendicular nanoscale wires. In a three-dimensional embodiment, memory locations are defined by crossing pointsbetween nanoscale wires located in different vertical layers.

Abstract translation: 公开了一种包括纳米线的存储器阵列。 纳米尺度线通过沿着纳米尺度线轴向和/或径向分布的可控区域来寻址。 在一维实施例中，存储器位置由纳米尺寸线和微尺寸线之间的交叉点限定。 在二维实验中，存储器位置由垂直的纳米线之间的交叉点定义。 在三维实施例中，存储器位置由位于不同垂直层中的纳米线之间的交叉点定义。