Abstract:
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.
Abstract:
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.
Abstract:
A method for forming closed vies In a mgtfflayßr printed circuit board. A dielectric layer Is laminated to one side of a central. core having a metal layer on each side. A second dielectric layer is laminated to the other side of the central core. Closed vtas In the central core have been formed by drilling partially through but not completely penetrating the central core, and then completing the via from the opposite side with a hole that Is much smaller In diameter to form a pathway that penetrates completely through the central core from one side to another. The via is then plated with metal to substantially close the smaller hols. Approximately one half of the closed vlas are situated such that the closed aperture faces one dielectric layer and a remainder of the dosed vias are situated such that the closed aperture faces the other dielectric layer.
Abstract:
A method is for fabricating an embedded capacitance printed circuit board assembly (400, 1100). The embedded capacitance printed circuit board assembly includes two embedded capacitance structures (110). Each capacitance structure (110) includes a crystallized dielectric oxide layer (115) sandwiched between an outer electrode layer (120) and an inner electrode layer (125) in which the two inner electrode layers are electrically connected together. A rivet via (1315) and a stacked via (1110) formed from a button via (910) and a stacked blind via (1111) may be used to electrically connect the two inner electrode layers together. A spindle via (525) may be formed through the inner and outer layers. The multi-layer printed circuit board may be formed from a capacitive laminate (100) that includes two capacitance structures.
Abstract:
A method for forming closed vies In a mgtfflayßr printed circuit board. A dielectric layer Is laminated to one side of a central. core having a metal layer on each side. A second dielectric layer is laminated to the other side of the central core. Closed vtas In the central core have been formed by drilling partially through but not completely penetrating the central core, and then completing the via from the opposite side with a hole that Is much smaller In diameter to form a pathway that penetrates completely through the central core from one side to another. The via is then plated with metal to substantially close the smaller hols. Approximately one half of the closed vlas are situated such that the closed aperture faces one dielectric layer and a remainder of the dosed vias are situated such that the closed aperture faces the other dielectric layer.
Abstract:
A method for forming closed vias in a multilayer printed circuit board. A dielectric layer (1085) is laminated to one side of a central core having a metal layer (120, 130) on each side. A second dielectric layer (1080) is laminated to the other side of the central core. Closed vias in the central core have been formed by drilling partially through but not completely penetrating the central core, and then completing the via from the opposite side with a hole that is much smaller in diameter to form a pathway that penetrates completely through the central core from one side to another. The via is then plated with metal to substantially close the smaller hole. Approximately one half of the closed vias are situated such that the closed aperture (355) faces one dielectric layer and a remainder of the closed vias are situated such that the closed aperture (350) faces the other dielectric layer. Resin from one dielectric layer (1085) fills the cavities of approximately one half of the closed vias, and resin from the other dielectric layer (1080) fills the circular cavities of the remainder of the closed vias. The total amount of resin migrated from each of the dielectric layers into the closed via cavities is approximately equal.
Abstract:
A method is for fabricating an embedded capacitance printed circuit board assembly (400, 1100). The embedded capacitance printed circuit board assembly includes two embedded capacitance structures (110). Each capacitance structure (110) includes a crystallized dielectric oxide layer (115) sandwiched between an outer electrode layer (120) and an inner electrode layer (125) in which the two inner electrode layers are electrically connected together. A rivet via (1315) and a stacked via (1110) formed from a button via (910) and a stacked blind via (1111) may be used to electrically connect the two inner electrode layers together. A spindle via (525) may be formed through the inner and outer layers. The multi-layer printed circuit board may be formed from a capacitive laminate (100) that includes two capacitance structures.
Abstract:
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.