公开(公告)号：WO2011043552A3

公开(公告)日：2011-10-13

申请号：PCT/KR2010006563

申请日：2010-09-28

Applicant: LG SILTRON INC ,  CHOI IL-SOO ,  MOON JI-HUN ,  KIM BONG-WOO ,  KIM DO-YEON

Inventor： CHOI IL-SOO ,  MOON JI-HUN ,  KIM BONG-WOO ,  KIM DO-YEON

IPC: C30B15/10 ,  C03B19/09

CPC classification number: C03B19/09 ,  C03B2201/24 ,  C30B15/10 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

Abstract: Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein a nitrogen is added in the silica of the outer layer.

Abstract translation: 本发明提供一种石英坩埚以及该石英坩埚的制造方法。 石英坩埚用于单晶生长装置中。 石英坩埚包括包含二氧化硅的内层和包括二氧化硅的外层，该外层设置在内层外侧以包围内层，其中在外层的二氧化硅中添加氮。

公开(公告)号：WO2011099680A1

公开(公告)日：2011-08-18

申请号：PCT/KR2010004777

申请日：2010-07-21

Applicant: LG SILTRON INC ,  CHO HYON-JONG ,  LEE HONG-WOO ,  KWAK MAN-SEOK ,  MOON JI-HUN

Inventor： CHO HYON-JONG ,  LEE HONG-WOO ,  KWAK MAN-SEOK ,  MOON JI-HUN

IPC: C30B15/00 ,  C30B29/06 ,  H01L21/02

CPC classification number: C30B15/14 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1016

Abstract: Provided are a single crystal cooler and a single crystal grower including the same. The single crystal cooler includes a cooling main body and a passage. The passage is formed on an inner wall and an outer wall of the cooling main body. The passage allows cooling materials to move therethrough. The single crystal cooler has a cylindrical shape. A first inner diameter R1 of the single crystal cooler is about 1.5 times or more greater than an inner diameter R2 of a single crystal grown by applying the single crystal cooler.

Abstract translation: 提供单晶冷却器和包括其的单晶种植者。 单晶冷却器包括冷却主体和通道。 通道形成在冷却主体的内壁和外壁上。 通道允许冷却材料通过其移动。 单晶冷却器具有圆柱形形状。 单晶冷却器的第一内径R1比通过施加单晶冷却器生长的单晶的内径R2大大约1.5倍或更大。

公开(公告)号：WO2010058980A2

公开(公告)日：2010-05-27

申请号：PCT/KR2009/006830

申请日：2009-11-20

Applicant: SILTRON INC. ,  LEE, Sang Hun ,  CHOI, ll Soo ,  OH, Hyun Jung ,  JEONG, Seung ,  MOON, Ji Hun ,  KIM, Do Yeon

Inventor： LEE, Sang Hun ,  CHOI, ll Soo ,  OH, Hyun Jung ,  JEONG, Seung ,  MOON, Ji Hun ,  KIM, Do Yeon

IPC: C30B15/14 ,  C30B15/30

CPC classification number: C30B15/14 ,  C30B15/16 ,  C30B29/06

Abstract: Embodiments provide a single crystal growing apparatus. The single crystal growing apparatus may include a chamber, a crucible, a heater, and heat supplying means. The crucible may be provided in the chamber to hold silicon melt. The heater may be provided in the chamber to heat the crucible. The heat supplying means may supply heat to a crystal at a necking portion during single crystal growth.

Abstract translation: 实施例提供单晶生长装置。 单晶生长装置可以包括室，坩埚，加热器和供热装置。 坩埚可以设置在室中以保持硅熔体。 加热器可以设置在室中以加热坩埚。 在单晶生长期间，供热装置可在颈缩部分向晶体供应热量。

公开(公告)号：WO2010087594A3

公开(公告)日：2010-10-21

申请号：PCT/KR2010000315

申请日：2010-01-18

Applicant: KOREA RES INST OF BIOSCIENCE ,  PARK YOUNG WOO ,  JEON JAE WON ,  JUNG JOON-GOO ,  CHOI HYE IN ,  SOHN MYUNG-HO ,  KIM HO YOUN ,  CHO MI-LA ,  JANG YOUNG-SOON ,  MOON JI-HUN ,  PARK JI HYUN

Inventor： PARK YOUNG WOO ,  JEON JAE WON ,  JUNG JOON-GOO ,  CHOI HYE IN ,  SOHN MYUNG-HO ,  KIM HO YOUN ,  CHO MI-LA ,  JANG YOUNG-SOON ,  MOON JI-HUN ,  PARK JI HYUN

IPC: A61K39/395 ,  A61K31/7105 ,  A61P29/00 ,  A61P37/08 ,  G01N33/53

CPC classification number: A61K31/7105 ,  G01N33/6893 ,  G01N2333/70596

Abstract: The present invention relates to an anti-inflammatory composition using an antibody specifically binding to CD93 or a soluble fragment thereof, a method for diagnosing inflammatory diseases using an aptamer or an antibody specifically binding to CD93 or a soluble fragment thereof, and a kit for diagnosing inflammatory diseases.

Abstract translation: 本发明涉及使用特异性结合CD93的抗体或其可溶性片段的抗炎组合物，使用适体或与CD93特异性结合的抗体或其可溶性片段来诊断炎性疾病的方法，以及诊断用试剂盒 炎性疾病。

公开(公告)号：WO2011099680A9

公开(公告)日：2011-08-18

申请号：PCT/KR2010/004777

申请日：2010-07-21

Applicant: LG SILTRON INC. ,  CHO, Hyon-Jong ,  LEE, Hong-Woo ,  KWAK, Man-Seok ,  MOON, Ji-Hun

Inventor： CHO, Hyon-Jong ,  LEE, Hong-Woo ,  KWAK, Man-Seok ,  MOON, Ji-Hun

IPC: C30B15/00 ,  C30B29/06 ,  H01L21/02

Abstract: Provided are a single crystal cooler and a single crystal grower including the same. The single crystal cooler includes a cooling main body and a passage. The passage is formed on an inner wall and an outer wall of the cooling main body. The passage allows cooling materials to move therethrough. The single crystal cooler has a cylindrical shape. A first inner diameter R1 of the single crystal cooler is about 1.5 times or more greater than an inner diameter R2 of a single crystal grown by applying the single crystal cooler.

公开(公告)号：WO2011043552A2

公开(公告)日：2011-04-14

申请号：PCT/KR2010/006563

申请日：2010-09-28

Applicant: LG SILTRON INC. ,  CHOI, Il-Soo ,  MOON, Ji-Hun ,  KIM, Bong-Woo ,  KIM, Do-Yeon

Inventor： CHOI, Il-Soo ,  MOON, Ji-Hun ,  KIM, Bong-Woo ,  KIM, Do-Yeon

IPC: C30B15/10 ,  C03B19/09

CPC classification number: C03B19/09 ,  C03B2201/24 ,  C30B15/10 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

Abstract: Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein a nitrogen is added in the silica of the outer layer.

Abstract translation: 提供石英坩埚和制造石英坩埚的方法。 石英坩埚用于单晶生长装置。 石英坩埚包括内层，包括二氧化硅，外层包括设置在内层外侧的二氧化硅，以包围内层，其中在外层的二氧化硅中加入氮。

公开(公告)号：WO2010087594A9

公开(公告)日：2011-11-10

申请号：PCT/KR2010000315

申请日：2010-01-18

Applicant: KOREA RES INST OF BIOSCIENCE ,  PARK YOUNG WOO ,  JEON JAE WON ,  JUNG JOON-GOO ,  CHOI HYE IN ,  SOHN MYUNG-HO ,  KIM HO YOUN ,  CHO MI-LA ,  JANG YOUNG-SOON ,  MOON JI-HUN ,  PARK JI HYUN

Inventor： PARK YOUNG WOO ,  JEON JAE WON ,  JUNG JOON-GOO ,  CHOI HYE IN ,  SOHN MYUNG-HO ,  KIM HO YOUN ,  CHO MI-LA ,  JANG YOUNG-SOON ,  MOON JI-HUN ,  PARK JI HYUN

IPC: A61K39/395 ,  A61K31/7105 ,  A61P29/00 ,  A61P37/08 ,  G01N33/53

CPC classification number: A61K31/7105 ,  G01N33/6893 ,  G01N2333/70596

Abstract: The present invention relates to an anti-inflammatory composition using an antibody specifically binding to CD93 or a soluble fragment thereof, a method for diagnosing inflammatory diseases using an aptamer or an antibody specifically binding to CD93 or a soluble fragment thereof, and a kit for diagnosing inflammatory diseases.

Abstract translation: 本发明涉及使用特异性结合CD93的抗体或其可溶性片段的抗炎组合物，使用特异性结合CD93或其可溶性片段的适体或抗体诊断炎性疾病的方法，以及用于诊断的试剂盒 炎性疾病。

公开(公告)号：WO2010058980A3

公开(公告)日：2010-08-19

申请号：PCT/KR2009006830

申请日：2009-11-20

Applicant: SILTRON INC ,  LEE SANG HUN ,  CHOI LL SOO ,  OH HYUN JUNG ,  JEONG SEUNG ,  MOON JI HUN ,  KIM DO YEON

Inventor： LEE SANG HUN ,  CHOI LL SOO ,  OH HYUN JUNG ,  JEONG SEUNG ,  MOON JI HUN ,  KIM DO YEON

IPC: C30B15/14 ,  C30B15/30

CPC classification number: C30B15/14 ,  C30B15/16 ,  C30B29/06

Abstract: Embodiments provide a single crystal growing apparatus. The single crystal growing apparatus may include a chamber, a crucible, a heater, and heat supplying means. The crucible may be provided in the chamber to hold silicon melt. The heater may be provided in the chamber to heat the crucible. The heat supplying means may supply heat to a crystal at a necking portion during single crystal growth.

Abstract translation: 实施例提供了一种单晶生长设备。 单晶生长设备可以包括腔室，坩埚，加热器和供热装置。 坩埚可以设置在室中以保持硅熔体。 加热器可以设置在室中以加热坩埚。 供热装置可以在单晶生长期间向颈缩部分处的晶体供热。

公开(公告)号：WO2010047556A3

公开(公告)日：2010-07-22

申请号：PCT/KR2009006151

申请日：2009-10-23

Applicant: SILTRON INC ,  MOON JI-HUN ,  KIM BONG-WOO ,  CHOI LL-SOO ,  LEE GUN-HO ,  JEONG SEUNG ,  KIM DO-YEON

Inventor： MOON JI-HUN ,  KIM BONG-WOO ,  CHOI LL-SOO ,  LEE GUN-HO ,  JEONG SEUNG ,  KIM DO-YEON

IPC: C30B15/32

CPC classification number: C30B15/32

Abstract: The present invention relates to a seed chuck for a single crystal silicon ingot growing apparatus. The seed chuck of the present invention is arranged in the single crystal silicon ingot growing apparatus based on the Czochralski process to hold a seed for growing single crystal silicon ingots. Said seed chuck comprises a seed chuck body having an upper portion with a rope joint part coupled with an ascending or descending rope, and a lower portion with a seed holding portion for accommodating and holding the seed. The seed chuck body has a hole for inserting a cooling pipe which has a vacuumed interior filled with a predetermined amount of refrigerant, and both ends of which are sealed. The cooling pipe is fitted into the insertion hole. The present invention employs a seed chuck with a cooling means to lower the temperature in a seed neck area during a body growing process and increase tensile strength. Whereby, large diameter single crystal silicon ingots can be safely grown.

Abstract translation: 本发明涉及一种用于单晶硅锭生长装置的晶种卡盘。 本发明的晶种卡盘被布置在基于切克劳斯基工艺的单晶硅锭生长设备中以保持用于生长单晶硅锭的晶种。 所述种子卡盘包括种子卡盘体，所述种子卡盘体具有上部和下部，下部具有用于容纳和保持种子的种子保持部分，所述上部具有与上行或下行绳索联接的绳索接头部分。 种籽卡盘体具有用于插入冷却管的孔，该冷却管具有充满预定量制冷剂的真空室，并且其两端被密封。 冷却管安装在插入孔中。 本发明采用具有冷却装置的种子吸盘，以在生长过程中降低种子颈部区域的温度并提高拉伸强度。 从而可以安全地生长大直径的单晶硅锭。