Abstract:
The present invention relates to a multilayer film comprising: • an inner layer system comprising a first surface and a second surface; • a first skin layer bound to the inner layer system at the first surface of the inner layer system; and • a second skin layer bound to the inner layer system at the second surface of the inner layer system; wherein • the inner layer system comprises ≥ 50.0 wt% with regard to the total weight of the inner layer system of a first ethylene-based polymer being a high-density polyethylene (HDPE) having a density of ≥ 940 and ≤ 970 kg/m3, preferably of ≥ 960 and ≤ 970 kg/m3, as determined in accordance with ASTM D792 (2008); and • at least one or both of the first or the second skin layer(s) is a sealing layer comprising a second ethylene-based polymer being a linear low-density polyethylene (LLDPE) comprising polymeric moieties derived from ethylene and from 1-hexene or 1-octene, having a density of ≥ 890 and ≤ 915 kg/m3 as determined in accordance with ASTM D792 (2008), preferably wherein the sealing layer comprises ≥ 70.0 wt% of the second ethylene-based polymer or wherein the sealing layer consists of the second ethylene-based polymer; wherein the multilayer film is a bi-directionally oriented film wherein the orientation in both directions is introduced in the solid state. Such film allows for the production of a sealed package having a sufficiently high sealing strength at reduced sealing temperatures, also referred to as the seal initiation temperature, whilst also having improved tensile properties, such as demonstrated by improved tensile modulus in both machine direction as well as in transverse direction, and improved tensile strength, also in both machine direction and in transverse direction.
Abstract:
Ferroelectric components, such as the ferroelectric field effect transistors (FeFETs), ferroelectric capacitors and ferroelectric diodes described above may be operated as multi-level memory cells as described by the present invention. Storing multiple bits of information in each multi-level memory cell may be performed by a controller coupled to an array of the ferroelectric components configured as ferroelectric memory cells. The controller may execute the steps of receiving a bit pattern for writing to a multi-level memory cell comprising a ferroelectric layer; selecting a pulse duration for applying a write pulse to the memory cell based, at least in part, on the received bit pattern; and applying at least one write pulse to the memory cell having the selected pulse duration, in which the at least one write pulse creates a remnant polarization within the ferroelectric layer that is representative of the received bit pattern.
Abstract:
Disclosed is a catalyst capable of producing an olefin from an alkyl halide, the catalyst comprising a silicoaluminophosphate (SAPO) having a chabazite zeolite structure with the following chemical composition (Si x Al y P z )O 2 , where x, y, and z represent the mole fractions of silicon, aluminum, and phosphorus, respectively, present as tetrahedral oxides, x is 0.01 to 0.30 and the sum of x + y + z is 1, and where the catalyst comprises silicon tetrahedral oxides that are connected with three or less aluminum tetrahedral oxide as shown by 29 Si magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy peak(s) with peak(s) maxima between -93 ppm and -115 ppm.
Abstract translation:公开了一种能够由烷基卤化物生产烯烃的催化剂,该催化剂包含具有以下化学成分(SixAlyPz)O 2的菱沸石沸石结构的硅铝磷酸盐(SAPO),其中x,y和z表示硅的摩尔分数 ,铝和磷分别以四面体氧化物存在,x为0.01〜0.30,x + y + z的和为1,其中催化剂包含四面体氧化物,其与三个或更少的四面体氧化铝连接,如图所示 通过29Si魔角旋转(MAS)核磁共振(NMR)光谱峰(s),峰(s)最大值在-93ppm和-115ppm之间。