公开(公告)号：WO2012006045A2

公开(公告)日：2012-01-12

申请号：PCT/US2011042084

申请日：2011-06-28

Applicant: AVENTA TECHNOLOGIES LLC ,  SFERLAZZO PIERO ,  POLNER DONALD N ,  SIMONELLI DARREN M

Inventor： SFERLAZZO PIERO ,  POLNER DONALD N ,  SIMONELLI DARREN M

IPC: C23C14/24 ,  C23C14/34 ,  C23C14/56

CPC classification number: C23C14/50 ,  C23C14/562

Abstract: Described are an apparatus and a method for cooling a web. The apparatus includes an inner cylinder having a void therein and configured for coupling to a gas source. The apparatus also includes an outer cylinder having an inner surface, an outer surface to support a web and apertures between the inner and outer surfaces. The outer cylinder rotates about the inner cylinder so that gas provided to the void of the inner cylinder flows through the apertures that are adjacent to the void and passes to the outer surface of the outer cylinder to increase the heat transfer between the web and the outer cylinder. The volume of gas introduced into the vacuum deposition chamber during a process run is thereby limited. Advantageously, the apparatus enables higher deposition rates and increased productivity.

Abstract translation: 描述了一种用于冷却网的装置和方法。 该装置包括其中具有空隙的内筒，并且构造成用于联接到气源。 该装置还包括具有内表面的外圆柱体，用于支撑腹板的外表面和内表面和外表面之间的孔。 外筒围绕内筒旋转，使得提供到内筒的空隙的气体流过与空隙相邻的孔，并传递到外筒的外表面，以增加腹板与外筒之间的热传递 圆筒。 因此，在处理运行期间引入真空沉积室的气体的体积受到限制。 有利地，该装置能够实现更高的沉积速率和更高的生产率。

公开(公告)号：WO2007075435A3

公开(公告)日：2007-07-05

申请号：PCT/US2006/047945

申请日：2006-12-14

Applicant: FLUENS CORPORATION ,  DEVITO, Richard ,  KLEIN, Martin ,  SFERLAZZO, Piero

Inventor： DEVITO, Richard ,  KLEIN, Martin ,  SFERLAZZO, Piero

IPC: C23C14/00 ,  C23C14/32

Abstract: A reactive sputtering system includes a vacuum chamber and a reactive ion source that is positioned inside the vacuum chamber. The reactive ion source generates a reactive ion beam from a reactant gas. A sputtering chamber is positioned in the vacuum chamber. The sputtering chamber includes a sputter source having a sputtering target that generates sputtering flux, walls that contain an inert gas, and a seal that impedes the reactant gas from entering into the sputtering chamber and that impedes inert gas and sputtered material from escaping into the vacuum chamber. A transport mechanism transports a substrate under the reactive ion source and through the sputtering chamber. The substrate is exposed to the reactive ion beam while passing under the reactive ion source and then is exposed to sputtering flux while passing through the sputtering chamber.

公开(公告)号：WO2004094692A1

公开(公告)日：2004-11-04

申请号：PCT/US2004/006455

申请日：2004-03-03

Applicant: FLUENS CORPORATION ,  SFERLAZZO, Piero

Inventor： SFERLAZZO, Piero

IPC: C23C16/44

CPC classification number: C23C16/45551 ,  C23C16/45508 ,  C23C16/4584 ,  Y10S414/139

Abstract: An atomic layer deposition system is described that includes a deposition chamber. A first and second reaction chamber are positioned in the deposition chamber and contain a first and a second reactant species, respectively. A monolayer of the first reactant species is deposited on a substrate passing through the first reaction chamber. A monolayer of the second reactant species is deposited on a substrate passing through the second reaction chamber. A transport mechanism transports a substrate in a path through the first reaction chamber and through the second reaction chamber, thereby depositing a film on the substrate by atomic layer deposition. The shape of the first and the second reaction chambers are chosen to achieve a constant exposure of the substrate to reactant species when the transport mechanism transports the substrate in the path through the respective reaction chambers at the constant transport rate.

Abstract translation: 描述了包括沉积室的原子层沉积系统。 第一和第二反应室分别位于沉积室中并含有第一和第二反应物种类。 第一反应物种的单层沉积在穿过第一反应室的基板上。 第二反应物种类的单层沉积在穿过第二反应室的基板上。 输送机构在通过第一反应室并通过第二反应室的路径中输送基板，由此通过原子层沉积在基板上沉积膜。 选择第一和第二反应室的形状，以便当输送机构以恒定的输送速率将基板输送通过相应的反应室的路径时，使基板恒定地暴露于反应物种。

公开(公告)号：WO2012170166A2

公开(公告)日：2012-12-13

申请号：PCT/US2012038256

申请日：2012-05-17

Applicant: AVENTA TECHNOLOGIES LLC ,  SFERLAZZO PIERO ,  LAMPROS THOMAS MICHAEL

Inventor： SFERLAZZO PIERO ,  LAMPROS THOMAS MICHAEL

IPC: H01L21/205 ,  C23C16/44

CPC classification number: H01L21/02568 ,  C23C16/407 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02485 ,  H01L21/02554 ,  H01L21/0262 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: Disclosed are an inline chemical vapor deposition method and system for fabricating a device. The method includes transporting a web or discrete substrate through a deposition chamber having a plurality of deposition modules. A buffer layer, a window layer and a transparent conductive layer are deposited onto the substrate during passage through a first deposition module, a second deposition module and a third deposition module, respectively. Advantageously, the steps for generating the buffer layer, window layer and transparent conductive layer are performed sequentially in a common vacuum environment of a single deposition chamber and the use of a conventional chemical bath deposition process to deposit the buffer layer is eliminated. The method is suitable for the manufacture of different types of devices including various types of solar cells such as copper indium gallium diselenide solar cells.

Abstract translation: 公开了一种用于制造装置的在线化学气相沉积方法和系统。 该方法包括通过具有多个沉积模块的沉积室输送幅材或离散基板。 在通过第一沉积模块，第二沉积模块和第三沉积模块时，缓冲层，窗口层和透明导电层分别沉积到衬底上。 有利地，用于产生缓冲层，窗口层和透明导电层的步骤在单个沉积室的共同真空环境中顺序地进行，并且消除了使用常规化学浴沉积工艺沉积缓冲层。 该方法适用于制造不同类型的器件，包括各种类型的太阳能电池，如铜铟镓二硒化物太阳能电池。

公开(公告)号：WO2010144302A3

公开(公告)日：2011-03-03

申请号：PCT/US2010037331

申请日：2010-06-03

Applicant: VEECO INSTR INC ,  ARMOUR ERIC A ,  QUINN WILLIAM E ,  SFERLAZZO PIERO

Inventor： ARMOUR ERIC A ,  QUINN WILLIAM E ,  SFERLAZZO PIERO

IPC: H01L21/205 ,  C23C16/54

CPC classification number: C23C16/545 ,  C23C16/45502 ,  C30B25/14

Abstract: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

Abstract translation: 卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。 沉积室限定了通过所述纤维网通过的通道，同时被所述至少两个辊输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

公开(公告)号：WO2010144302A2

公开(公告)日：2010-12-16

申请号：PCT/US2010/037331

申请日：2010-06-03

Applicant: VEECO INSTRUMENTS INC. ,  ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

Inventor： ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

IPC: H01L21/205 ,  C23C16/54

CPC classification number: C23C16/545 ,  C23C16/45502 ,  C30B25/14

Abstract: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

Abstract translation: 卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。 沉积室限定了通过所述纤维网通过的通道，同时被所述至少两个辊输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

公开(公告)号：WO2003083519A3

公开(公告)日：2003-10-09

申请号：PCT/US2003/008235

申请日：2003-03-10

Applicant: UNAXIS USA, INC. ,  BURES, Kenneth, J. ,  GUNES, Dogan ,  LEE, Chunghsin ,  MAKI, Paul ,  SFERLAZZO, Piero

Inventor： BURES, Kenneth, J. ,  GUNES, Dogan ,  LEE, Chunghsin ,  MAKI, Paul ,  SFERLAZZO, Piero

IPC: G02F1/125

Abstract: An acousto-optic tunable filter (200) that includes a polarization beamsplitter (202), a multi-segment interaction region (180) and a polarization beam combiner (204) is described. The polarization beamsplitter (202) generates a first (116) and a second (114) polarized optical signal. The multi-segment optical interaction region (180) includes a first optical interaction region (102) and a first acoustic wave generator that generates acoustic waves in the first optical interaction region (102). The multi-segment optical interaction region (180) also includes a second optical interaction region (104) that is non-collinear relative to the first optical interaction region (102) and a second acoustic wave generator that generates acoustic waves in the second optical interaction region (104). Optical signals that are phase-matched to the acoustic waves are mode-converted in response to the acoustic waves. The acousto-optic tunable filter (200) also includes a polarization beam combiner (204) that generates both a mode-converted optical signal and a non-mode-converted optical signal.

公开(公告)号：WO0205324A3

公开(公告)日：2002-06-20

申请号：PCT/US0121516

申请日：2001-07-09

Applicant: UNAXIS USA INC ,  SFERLAZZO PIERO

Inventor： SFERLAZZO PIERO

IPC: G02B5/28 ,  C23C14/04 ,  C23C14/22 ,  C23C14/46

CPC classification number: C23C14/228 ,  C23C14/044 ,  C23C14/46

Abstract: A differentially pumped deposition system (100) is described that includes a deposition source (104), such as a magnetron sputtering source, that is positioned in a first chamber (106). The deposition source generates deposition flux comprising neutral atoms and molecules. A shield (114) that defines an aperture (116) is positioned in the path of the deposition flux (110). The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support (118) is positioned in the second chamber (102) adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system (126) scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract translation: 描述了差分泵浦沉积系统（100），其包括定位在第一腔室（106）中的沉积源（104），例如磁控溅射源。 沉积源产生包含中性原子和分子的沉积通量。 限定孔径（116）的屏蔽（114）位于沉积焊剂（110）的路径中。 屏蔽层通过孔径传递沉积磁通，并且基本上阻止沉积磁通在其它地方传播通过屏蔽层。 基板支撑件（118）被定位在与屏蔽件相邻的第二室（102）中。 第二室中的压力低于第一室中的压力。 双扫描系统（126）利用第一和第二运动相对于孔径扫描基板支撑件，从而提高沉积的薄膜的均匀性。

公开(公告)号：WO2011139472A3

公开(公告)日：2012-01-19

申请号：PCT/US2011031509

申请日：2011-04-07

Applicant: AVENTA SYSTEMS LLC ,  SFERLAZZO PIERO ,  TOMPA GARY S

Inventor： SFERLAZZO PIERO ,  TOMPA GARY S

IPC: C23C16/54 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205

CPC classification number: C23C16/545 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45574

Abstract: An inline CVD system includes a manifold and a continuous transport system. The manifold has a plurality of ports. The ports include a first precursor port, a pair of second precursor ports and a pair of pumping ports. The first precursor port is disposed between the second precursor ports and the pair of second precursor ports is disposed between the pumping ports. The first precursor port and the pair of second precursor ports are configured for coupling to a first precursor gas source and a second precursor gas source, respectively, and the pumping ports are configured to couple to a discharge system to exhaust the first and second precursor gases during a CVD process. The continuous transport system transports a substrate adjacent to the plurality of ports during the CVD process.

Abstract translation: 在线CVD系统包括歧管和连续输送系统。 歧管具有多个端口。 这些端口包括第一前体端口，一对第二前体端口和一对泵送端口。 第一前体端口设置在第二前体端口之间，并且一对第二前体端口设置在泵送端口之间。 第一前体端口和一对第二前体端口被配置成分别耦合到第一前体气体源和第二前体气体源，并且泵送端口被配置为耦合到排放系统以排出第一和第二前体气体 在CVD过程中。 在CVD过程期间，连续输送系统传送与多个端口相邻的基板。

公开(公告)号：WO2011149678A2

公开(公告)日：2011-12-01

申请号：PCT/US2011/036167

申请日：2011-05-12

Applicant: AVENTA SYSTEMS, LLC ,  SFERLAZZO, Piero

Inventor： SFERLAZZO, Piero

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/67784 ,  H01L21/68771

Abstract: Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

Abstract translation: 描述了包括沉积室，一个或多个衬底载体，气体注入器和加热系统的线性分批CVD系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体构造成将衬底保持在线性构型。 每个气体喷射器包括一个端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得能够沿着反应室的长度均匀分布前体气体跨基板，并且允许与常规沉积室相比较处理更多数量的基板。