NUCLEATION LAYER FOR THIN FILM METAL LAYER FORMATION
    5.
    发明申请
    NUCLEATION LAYER FOR THIN FILM METAL LAYER FORMATION 审中-公开
    薄膜金属层形成的成核层

    公开(公告)号:WO2008083308A1

    公开(公告)日:2008-07-10

    申请号:PCT/US2007/089095

    申请日:2007-12-28

    Abstract: A conductive film is formed on a flexible polymer support by applying a seed layer comprising gallium oxide, indium oxide, magnesium oxide, zinc oxide or mixture (including mixed oxides) thereof to the flexible polymer support, and applying an extensible, visible light-transmissive metal layer over the seed layer. The seed layer oxide desirably promotes deposition of the subsequently-applied metal layer in a more uniform or more dense fashion, or promotes earlier formation (viz., at a thinner applied thickness) of a continuous metal layer. The resulting films have high visible light transmittance and low electrical resistance.

    Abstract translation: 通过将包含氧化镓,氧化铟,氧化镁,氧化锌或其混合物(包括混合氧化物)的种子层施加到柔性聚合物载体上,在柔性聚合物载体上形成导电膜,并施加可延展的可见光透射 种子层上的金属层。 种子层氧化物希望促进随后施加的金属层以更均匀或更致密的方式沉积,或促进连续金属层的早期形成(即,较薄的施加厚度)。 所得膜具有高可见光透射率和低电阻。

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