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    ON CHIP ELECTRIC WAVES: AN ANALOG APPROACH TO PHYSICAL UNCLONABLE FUNCTIONS: PUF
    1.
    发明申请
    ON CHIP ELECTRIC WAVES: AN ANALOG APPROACH TO PHYSICAL UNCLONABLE FUNCTIONS: PUF 审中-公开
    芯片电波：物理不可靠功能的模拟方法：PUF

    公开(公告)号：WO2010105994A3

    公开(公告)日：2011-01-13

    申请号：PCT/EP2010053234

    申请日：2010-03-12

    申请人： UNIV MUENCHEN TECH ,  RUEHRMAIR ULRICH ,  STUTZMANN MARTIN ,  CSABA GYOERGY ,  SCHLICHTMANN ULF ,  LUGLI PAOLO

    发明人： RUEHRMAIR ULRICH ,  STUTZMANN MARTIN ,  CSABA GYOERGY ,  SCHLICHTMANN ULF ,  LUGLI PAOLO

    IPC分类号： H04L9/32

    CPC分类号： G06F21/10 ,  G06F21/31 ,  G06F21/73 ,  G06F2221/2103 ,  G06F2221/2129 ,  G09C1/00 ,  H04L9/3247 ,  H04L9/3278 ,  H04L2209/56 ,  H04L2209/603 ,  H04L2209/805

    摘要： This application proposes the use of Cellular Non-Linear Networks (CNNs) as physical unclonable functions (PUFs). We argue that analogue circuits offer higher security than existing digital PUFs and that the CNN paradigm allows us to build large, unclonable, and scalable analogue PUFs, which still show a stable and repeatable input-output behaviour. CNNs are dynamical arrays of locally-interconnected cells, with a cell dynamics that depends upon the interconnection strengths to their neighbours. They can be designed to evolve in time according to partial differential equations. If this equation describes a physical phenomenon, then the CNN can simulate a complex physical system on-chip. This can be exploited to create electrical PUFs with high relevant structural information content. To illustrate our paradigm at work, we design a circuit that directly emulates nonlinear wave propagation phenomena in a random media. It effectively translates the complexity of optical PUFs into electrical circuits. This, leading to better practicality, while maintaining or even improving the security properties of their optical counterparts.

    摘要翻译： 该应用提出使用蜂窝非线性网络（CNN）作为物理不可克隆功能（PUF）。 我们认为，模拟电路提供比现有数字PUF更高的安全性，而CNN范式允许我们构建大型，不可克隆和可扩展的模拟PUF，这些PUF仍然显示稳定和可重复的输入输出行为。 CNN是本地互连的小区的动态阵列，其细胞动力学取决于与其邻居的互连强度。 它们可以被设计为根据偏微分方程在时间上进化。 如果这个方程描述了物理现象，那么CNN可以模拟片上复杂的物理系统。 这可以被利用来创建具有高相关结构信息内容的电气PUF。 为了说明我们在工作中的范例，我们设计了一种在随机介质中直接仿真非线性波传播现象的电路。 它有效地将光学PUF的复杂性转化为电路。 这导致更好的实用性，同时保持或甚至改善其光学对应物的安全性能。

    SYSTEM AND METHOD FOR SECURITY PURPOSES
    2.
    发明申请
    SYSTEM AND METHOD FOR SECURITY PURPOSES 审中-公开
    用于安全目的的系统和方法

    公开(公告)号：WO2010105993A2

    公开(公告)日：2010-09-23

    申请号：PCT/EP2010053229

    申请日：2010-03-12

    申请人： UNIV MUENCHEN TECH ,  RUEHRMAIR ULRICH ,  STUTZMANN MARTIN ,  CSABA GYOERGY ,  LUGLI PAOLO ,  FINLEY JONATHAN ,  JIRAUSCHEK CHRISTIAN ,  JAEGER CHRISTIAN

    发明人： RUEHRMAIR ULRICH ,  STUTZMANN MARTIN ,  CSABA GYOERGY ,  LUGLI PAOLO ,  FINLEY JONATHAN ,  JIRAUSCHEK CHRISTIAN ,  JAEGER CHRISTIAN

    IPC分类号： H04L9/32 ,  H01Q15/00 ,  H01Q17/00

    CPC分类号： H04L9/3218 ,  B82Y10/00 ,  G06F21/44 ,  G06F21/73 ,  G06N3/063 ,  G09C1/00 ,  H01L27/1021 ,  H01Q1/38 ,  H01Q5/40 ,  H01Q23/00 ,  H04L9/3213 ,  H04L9/3278 ,  H04L2209/043 ,  H04L2209/50 ,  H04L2209/60 ,  H04L2209/805

    摘要： A system for security purposes comprising: - an inner structure that is accessible by a plurality of terminals, - wherein the system allows a measurement on the inner structure of the system by using a challenge signal comprising a plurality of input signals applied in parallel to the terminals and by receiving a response signal dependent on a setting of the challenge signal and dependent on the inner structure of the system, wherein - the system comprises at least two features of the group containing: > the ability to process non-binary input signals, > a bandwidth at the terminals and an information content ensuring a incomplete readout of the information content within a predefined access time period, > a spatial and/or logical disorder of the inner structure, > a non-linear relation between the input signals and output signals appearing at the terminals, and that - from the knowledge of a subset of the predefined settings and of associated response signals, the response signal associated with a particular setting outside the subset is not predictable with a probability higher than the probability for guessing the response signal.

    摘要翻译： 一种用于安全目的的系统，包括： - 可由多个终端访问的内部结构，其中所述系统允许通过使用质询信号对所述系统的内部结构进行测量，所述挑战信号包括与 并且通过接收取决于挑战信号的设置并且取决于系统的内部结构的响应信号，其中 - 该系统包括该组的至少两个特征，其包含：处理非二进制输入信号的能力， >终端处的带宽和确保在预定义访问时间段内的信息内容的不完全读出的信息内容，>内部结构的空间和/或逻辑混乱，>输入信号与输出之间的非线性关系 出现在终端处的信号，并且 - 从预定义设置的子集和相关联的响应信号的知识中，响应信号也是 与子集外的特定设置相关联的概率不大于猜测响应信号的概率。

    SEMICONDUCTOR BIOSENSORS
    8.
    发明申请
    SEMICONDUCTOR BIOSENSORS 审中-公开
    半导体生物传感器

    公开(公告)号：WO2010142773A3

    公开(公告)日：2011-06-09

    申请号：PCT/EP2010058183

    申请日：2010-06-10

    申请人： HELMHOLTZ ZENTRUM MUENCHEN ,  THALHAMMER STEFAN ,  HOFSTETTER MARKUS ,  HOWGATE JOHN ,  STUTZMANN MARTIN

    发明人： THALHAMMER STEFAN ,  HOFSTETTER MARKUS ,  HOWGATE JOHN ,  STUTZMANN MARTIN

    IPC分类号： C12M1/34 ,  G01N27/414 ,  G01N33/487 ,  G01N33/50 ,  G01T1/24

    CPC分类号： G01T1/02 ,  G01N33/48728

    摘要： The present application relates to semiconductor devices, in particular to a device for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time, comprising (a) at least one discrete area comprising a high electron mobility transistor (HEMT); and (b) non - excitable cells attached to said HEMT (HEMT element) for example, fibroblasts, HEK, CHO cell lines, keratinocytes, etc. Preferably, the HEMT is an AlGaN/GaN FET. Accordingly, the device can be applied in uses and methods for monitoring a cell signal such as an electrical signal produced by living cells in response to external stimulation, optionally in real time. Likewise, the device can be applied for screening compounds that reverse, protect from and/or shield cells from external stimuli which cause damage to cells. Also, kits comprising the device are disclosed.

    摘要翻译： 本申请涉及半导体器件，特别涉及一种用于监视细胞信号的装置，例如可选地实时地响应于外部刺激而由活细胞产生的电信号，包括（a）至少一个离散区域，包括高 电子迁移率晶体管（HEMT）; 和（b）附着于所述HEMT（HEMT元件）例如成纤维细胞，HEK，CHO细胞系，角质形成细胞等的不可兴奋细胞。优选地，HEMT是AlGaN / GaN FET。 因此，该设备可以应用于可选地实时监视响应于外部刺激的由活细胞产生的电信号的细胞信号的用途和方法。 同样，该装置可用于筛选从外部刺激反向，保护和/或屏蔽细胞的化合物，从而引起细胞损伤。 此外，公开了包括该装置的套件。

    NANOSCALE SILICON PARTICLES
    10.
    发明申请
    NANOSCALE SILICON PARTICLES 审中-公开
    纳米硅胶颗粒

    公开(公告)号：WO2007025793A1

    公开(公告)日：2007-03-08

    申请号：PCT/EP2006/063953

    申请日：2006-07-06

    申请人： DEGUSSA AG ,  BAUMER, Andrea ,  BRANDT, Martin,S. ,  STUTZMANN, Martin ,  WIGGERS, Hartmut

    发明人： BAUMER, Andrea ,  BRANDT, Martin,S. ,  STUTZMANN, Martin ,  WIGGERS, Hartmut

    IPC分类号： C01B33/027

    CPC分类号： C01B33/027 ,  Y10T428/2993

    摘要： Nanoscale silicon particles that have a BET specific surface area in the range of 100 to 800 m2/g, that consist of an essentially round, mostly unfacetted crystalline Si core surrounded by an amorphous shell, the amorphous shell comprising silica and hydrogen-terminated silicon atoms and have a paramagnetic defect density in the range of 1013 to 1017 1/mg. Essentially hydrogen terminated, nanoscale silicon particles having a paramagnetic defect density in the range of 10 12 to 10 16 1/mg obtained by treating the nanoscale silicon particles with hydrofluoric acid. Essentially alkyl terminated nanoscale silicon particles having a paramagnetic defect density in the range of 3xl0 12 to 3xl0 16 1/mg obtained by treating the essentially hydrogen terminated, nanoscale silicon particles with one or more compounds selected from the group of 1-alkenes and/or 1-alkynes. Partially alkyl terminated nanoscale silicon particles having a paramagnetic paramagnetic defect density in the range of 3xl0 12 to 3xl0 16 1/mg obtained by treating the nanoscale silicon particles with one or more compounds selected from the group of 1-alkenes and/or 1-alkynes.

    摘要翻译： 具有100-800m2 / g范围内的BET比表面积的纳米级硅颗粒，其由被无定形壳包围的基本上圆形的，大部分为未结晶的晶体Si核构成，所述无定形壳包含二氧化硅和氢封端的硅原子 并且具有1013至1017 1 / mg范围内的顺磁性缺陷密度。 基本上氢封端，通过用氢氟酸处理纳米级硅颗粒而获得的具有在10 12至10 16 / mg范围内的顺磁性缺陷密度的纳米尺度硅颗粒。 本质上是烷基封端的纳米尺度硅颗粒，其具有通过用一个（例如）处理基本上氢的封端的纳米级硅颗粒获得的3×10 12至3×10 16 / mg范围内的顺磁性缺陷密度 或更多选自1-烯烃和/或1-炔烃的化合物。 通过用一种或多种化合物处理纳米尺度硅颗粒而获得的部分烷基封端的纳米尺度硅颗粒具有在3×10 12至3×10 16 / mg范围内的顺磁性顺磁性缺陷密度 选自1-烯烃和/或1-炔烃。