公开(公告)号：WO2015052330A1

公开(公告)日：2015-04-16

申请号：PCT/EP2014/071807

申请日：2014-10-10

Applicant: TARKOTTA, Gunter als Insolvenzverwalter der AZZURRO Semiconductors AG

Inventor： CHITNIS, Ashay ,  PINOS, Andrea ,  LUTGEN, Stephan ,  TAN, Wei-Sin

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0083

Abstract: A layer structure 100 for a surface-emitting LED having an emission surface 101 that is closer to a p-side of the structure than to an n-side of the structure, and further comprising a transparent anode layer 110, a p-type layer 120, an active group-Ill nitride layer structure 130, an n-type layer 140, a cathode layer 150, an electrically insulating layer 160 under the cathode layer, a metallically conductive anode contact substrate 170 under the insulating layer, at least one vertical interconnect 175 electrically connecting the anode contact substrate and the anode layer, a metallically conductive cathode contact substrate 180 electrically connected with and arranged under the cathode layer, wherein either the insulating layer or the cathode layer is reflective, and wherein the cathode contact substrate and/or the anode contact substrate have a suitable thickness for forming a mechanical support of the layer structure.

Abstract translation: 一种用于表面发射LED的层结构100，其具有比结构的n侧更靠近该结构的p侧的发射表面101，并且还包括透明阳极层110，p型层 120，活性III族氮化物层结构130，n型层140，阴极层150，阴极层下方的电绝缘层160，绝缘层下方的金属导电阳极接触衬底170，至少一个垂直 电连接阳极接触衬底和阳极层的互连175，与阴极层电连接并布置在阴极层下方的金属导电阴极接触衬底180，其中绝缘层或阴极层都是反射性的，并且其中阴极接触衬底和/ 或阳极接触衬底具有用于形成层结构的机械支撑件的合适的厚度。

公开(公告)号：WO2014125092A1

公开(公告)日：2014-08-21

申请号：PCT/EP2014/052957

申请日：2014-02-14

Applicant: TARKOTTA, Gunter

Inventor： LUTGEN, Stephan ,  MURAD, Saad ,  CHITNIS, Ashay

IPC: C30B25/18 ,  C30B29/40 ,  H01L29/267 ,  H01L21/02

CPC classification number: H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

Abstract: The invention relates to an epitaxial group-ill-nitride buffer-layer structure (100) on a heterosubstrate, wherein the buffer-layer structure (100) comprises at least one stress- management layer sequence S including an interlayer structure (530) arranged between and adjacent to a first and a second group-ill-nitride layer (120, 140), wherein the inter¬layer structure (530) comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers (120, 140), and wherein a p-type-dopant-concentration profile drops, starting from at least 1 x10 18 cm -3 , by at least a factor of two in transition from the interlayer structure (530) to the first and second group-ill-nitride layers (120, 140).

Abstract translation: 本发明涉及一种异质衬底上的外延基 - 氮化物缓冲层结构（100），其中缓冲层结构（100）包括至少一个应力管理层序列S，其包括层间结构（530） 并且与第一和第二组氮化物层（120,140）相邻，其中所述层间结构（530）包括具有比所述第一和第二氮化物层的材料更大的带隙的组氮化物中间层材料 第二组氮化物层（120,140），并且其中p型掺杂剂浓度分布从至少1×10 18 cm -3开始至少两倍从层间结构转变（ 530）连接到第一和第二组氮化物层（120,140）。

公开(公告)号：WO2015067681A1

公开(公告)日：2015-05-14

申请号：PCT/EP2014/073875

申请日：2014-11-06

Applicant: TARKOTTA, GUNTER ALS INSOLVENZVERWALTER DER AZZURRO SEMICONDUCTORS AG

Inventor： CHITNIS, Ashay ,  TAN, Wei-sin ,  PINOS, Andrea

IPC: H01L21/20

CPC classification number: H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02513 ,  H01L21/0254

Abstract: An epitaxial wafer (100),comprising a silicon substrate having a principal surface with a center region (110) and an edge region near an outer circumferential line of the principal surface, and a polycrystalline or amorphous edge-mask layer (120), which is made of a material suitable for growth of group-III-nitride material thereon and which is deposited directly and only on the edge region of the principal surface,such that the center region and the edge-mask layer (120) together form a growth substrate for a group-III-nitride buffer layer (130) structure conformally deposited thereon.

Abstract translation: 一种外延晶片（100），包括具有中心区域（110）的主表面和靠近主表面的外圆周线的边缘区域的硅衬底和多晶或非晶边缘掩模层（120），其中 由适于生长其上的III族氮化物材料的材料制成，并且仅直接沉积在主表面的边缘区域上，使得中心区域和边缘掩模层（120）一起形成生长 用于其上共同沉积的III-III族氮化物缓冲层（130）结构的衬底。