公开(公告)号：WO2013030632A1

公开(公告)日：2013-03-07

申请号：PCT/IB2011/054594

申请日：2011-10-17

Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLC ,  BHATT, Hemanshu, D., ,  TYAGI, Sunit, D.,

Inventor： BHATT, Hemanshu, D., ,  TYAGI, Sunit, D.,

IPC: G02B1/12 ,  B82Y40/00 ,  G02B1/04 ,  B82Y20/00 ,  D06M15/507

CPC classification number: G02B6/0229 ,  B82Y20/00 ,  B82Y40/00 ,  G02B1/005 ,  G02B1/046 ,  G02B1/048 ,  G02B6/02033 ,  G02B6/02309 ,  G02B6/02319 ,  G02B6/02342 ,  G02B6/02376 ,  Y10S977/70 ,  Y10T428/249921

Abstract: The present technology provides an illustrative method for preparing fibers with desirable optical characteristics. The method includes providing a fiber that comprises a core layer and a cladding layer located around the core layer. The method further includes applying a nanostructure template to the cladding layer to form one or more photonic nanostructures having nanostructure scales and compressing the core layer to cause the core layer to bulge and form air gaps between the core layer and the one or more photonic nanostructures.

Abstract translation: 本技术提供了制备具有所需光学特性的纤维的说明性方法。 该方法包括提供包括芯层和位于芯层周围的覆层的光纤。 该方法还包括将纳米结构模板施加到包覆层以形成具有纳米结构尺度的一个或多个光子纳米结构并压缩芯层，以使芯层在芯层和一个或多个光子纳米结构之间凸起并形成气隙。

公开(公告)号：WO0245156A3

公开(公告)日：2003-01-23

申请号：PCT/US0144162

申请日：2001-11-06

Applicant: INTEL CORP ,  ARMSTRONG MARK ,  SCHROM GERHARD ,  KUHN KELIN J ,  PACKAN PAUL A ,  TYAGI SUNIT D ,  THOMPSON SCOTT E

Inventor： ARMSTRONG MARK ,  SCHROM GERHARD ,  KUHN KELIN J ,  PACKAN PAUL A ,  TYAGI SUNIT D ,  THOMPSON SCOTT E

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/7846 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/78 ,  H01L29/7843

Abstract: Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the direction. Additionally, longitudinal tensile stress is applied to the channels.

Abstract translation: 互补金属氧化物半导体晶体管形成在硅衬底上。 基板具有{100}晶体取向。 晶体管形成在衬底上，使得电流在晶体管的沟道中流动平行于<100>方向。 此外，纵向拉伸应力施加到通道。