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    TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS
    2.
    发明申请
    TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS 审中-公开
    使用多重分析从半导体处理系统转换计量数据

    公开(公告)号：WO2007092229A2

    公开(公告)日：2007-08-16

    申请号：PCT/US2007/002665

    申请日：2007-01-30

    Applicant: TOKYO ELECTRON LIMITED ,  VUONG, Vi ,  BAO, Junwei ,  CHEN, Yan ,  HEIKO, Weichert ,  EGRET, Sebastien

    Inventor： VUONG, Vi ,  BAO, Junwei ,  CHEN, Yan ,  HEIKO, Weichert ,  EGRET, Sebastien

    CPC classification number: G01N21/4788 ,  G01N21/211 ,  G01N2021/215

    Abstract: Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

    Abstract translation: 来自半导体处理系统的测量数据使用多变量分析进行转换。 特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。 使用多变量分析确定获得的度量数据集的一个或多个基本变量。 获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。 获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。 使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

    METROLOGY HARDWARE ADAPTATION WITH UNIVERSAL LIBRARY
    4.
    发明申请
    METROLOGY HARDWARE ADAPTATION WITH UNIVERSAL LIBRARY 审中-公开
    具有通用图书馆的计量硬件适应性

    公开(公告)号：WO2004013568A8

    公开(公告)日：2004-10-21

    申请号：PCT/US0324916

    申请日：2003-08-06

    Applicant: TIMBRE TECH INC ,  DREGE EMMANUEL ,  BAO JUNWEI ,  DODDI SRINIVAS ,  VUONG VI

    Inventor： DREGE EMMANUEL ,  BAO JUNWEI ,  DODDI SRINIVAS ,  VUONG VI

    IPC: G01N21/956 ,  G06F19/00

    CPC classification number: G03F7/70516 ,  G01N21/956 ,  G03F7/70625

    Abstract: To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.

    Abstract translation: 为了产生用于半导体结构的光学测量的系数集合，获得用于一组参数的至少三个光学测量信号。 光学测量信号指示从半导体结构衍射的光，并且改变该组参数中的至少一个参数的值以产生每个信号。 获得至少三个光学测量信号之间的功能关系，所述功能关系包括至少三个系数值。 确定来自功能关系的至少三个系数值的至少三组系数。

    OPTIMIZED MODEL AND PARAMETER SELECTION FOR OPTICAL METROLOGY
    5.
    发明申请
    OPTIMIZED MODEL AND PARAMETER SELECTION FOR OPTICAL METROLOGY 审中-公开
    光学计量学的优化模型和参数选择

    公开(公告)号：WO2004088721A2

    公开(公告)日：2004-10-14

    申请号：PCT/US2004/009453

    申请日：2004-03-25

    Applicant: TIMBRE TECHNOLOGIES, INC. ,  BALASUBRAMANIAN, Raghu ,  YEDUR, Sanjay ,  VUONG, VI ,  JAKATDAR, Nickhil

    Inventor： BALASUBRAMANIAN, Raghu ,  YEDUR, Sanjay ,  VUONG, VI ,  JAKATDAR, Nickhil

    IPC: H01L

    CPC classification number: G06T7/0006 ,  G01N21/4788 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/70625 ,  G06T2207/30148

    Abstract: A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

    Abstract translation: 基于具有一个或多个参数的模板来选择用于晶片中结构的光学测量的轮廓模型，该模板包括与晶片中的结构相关联的过程和建模属性的特性。 该过程包括执行轮廓建模过程以基于具有包括过程和建模属性的特征的一个或多个参数的模板来生成晶片结构的轮廓模型。 轮廓模型包括与结构的尺寸相关联的一组几何参数。 可以进一步根据终止标准测试生成的简档模型，并修改一个或多个参数。 可以重复执行建模过程以生成简档模型并测试生成的简档模型的过程，直到满足终止标准。

    IN-DIE OPTICAL METROLOGY
    6.
    发明申请
    IN-DIE OPTICAL METROLOGY 审中-公开
    内在光学计量学

    公开(公告)号：WO2007123696A2

    公开(公告)日：2007-11-01

    申请号：PCT/US2007007932

    申请日：2007-03-29

    Applicant: TOKYO ELECTRON LTD ,  LI SHIFANG ,  BAO JUNWEI ,  VUONG VI

    Inventor： LI SHIFANG ,  BAO JUNWEI ,  VUONG VI

    IPC: G01J4/02

    CPC classification number: G01B11/24 ,  G03F7/70625

    Abstract: To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.

    Abstract translation: 为了确定半导体晶片上的管芯内结构的一个或多个特征，在要形成在测试焊盘上的测试结构的一个或多个特征与相应的管芯内结构的一个或多个特征之间确定相关性。 获得测量结果测得的衍射信号。 使用测量的衍射信号确定测试结构的一个或多个特征。 基于测试结构的一个或多个确定的特征和确定的相关性来确定管芯内结构的一个或多个特征。

    TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS
    7.
    发明申请
    TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS 审中-公开
    使用多重分析从半导体处理系统转换计量数据

    公开(公告)号：WO2007092229A3

    公开(公告)日：2009-06-04

    申请号：PCT/US2007002665

    申请日：2007-01-30

    Applicant: TOKYO ELECTRON LTD ,  VUONG VI ,  BAO JUNWEI ,  CHEN YAN ,  HEIKO WEICHERT ,  EGRET SEBASTIEN

    Inventor： VUONG VI ,  BAO JUNWEI ,  CHEN YAN ,  HEIKO WEICHERT ,  EGRET SEBASTIEN

    IPC: G01N31/00

    CPC classification number: G01N21/4788 ,  G01N21/211 ,  G01N2021/215

    Abstract: Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.

    Abstract translation: 来自半导体处理系统的测量数据使用多变量分析进行转换。 特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。 使用多变量分析确定获得的度量数据集的一个或多个基本变量。 获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。 获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。 使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

    WEIGHTING FUNCTION OF ENHANCE MEASURED DIFFRACTION SIGNALS IN OPTICAL METROLOGY
    8.
    发明申请
    WEIGHTING FUNCTION OF ENHANCE MEASURED DIFFRACTION SIGNALS IN OPTICAL METROLOGY 审中-公开
    光学计量学中加权偏差信号的加权函数

    公开(公告)号：WO2007103302A2

    公开(公告)日：2007-09-13

    申请号：PCT/US2007/005573

    申请日：2007-03-05

    Applicant: TOKYO ELECTRON LIMITED ,  VUONG, Vi ,  BAO, Junwei ,  LI, Shifang ,  CHEN, Yan

    Inventor： VUONG, Vi ,  BAO, Junwei ,  LI, Shifang ,  CHEN, Yan

    IPC: G01B11/14

    CPC classification number: G01B11/24

    Abstract: A weighting function is obtained to enhance measured diffraction signals used in optical metrology. To obtain the weighting function, a measured diffraction signal is obtained. The measured diffraction signal was measured from a site on a wafer using a photometric device. A first weighting function is defined based on noise that exists in the measured diffraction signal. A second weighting function is defined based on accuracy of the measured diffraction signal. A third weighting function is defined based on sensitivity of the measured diffraction signal. A fourth weighting function is defined based on one or more of the first, second, and third weighting functions.

    Abstract translation: 获得加权函数以增强在光学计量学中使用的测量的衍射信号。 为了获得加权函数，获得测量的衍射信号。 使用光度测量装置从晶片上的位置测量测量的衍射信号。 基于存在于测量的衍射信号中的噪声来定义第一加权函数。 基于测量的衍射信号的精度来定义第二加权函数。 基于测量的衍射信号的灵敏度来定义第三加权函数。 基于第一，第二和第三加权函数中的一个或多个来定义第四加权函数。

    METROLOGY HARDWARE ADAPTATION WITH UNIVERSAL LIBRARY
    9.
    发明申请
    METROLOGY HARDWARE ADAPTATION WITH UNIVERSAL LIBRARY 审中-公开
    用通用库的计量硬件适应

    公开(公告)号：WO2004013568A3

    公开(公告)日：2004-06-17

    申请号：PCT/US0324916

    申请日：2003-08-06

    Applicant: TIMBRE TECH INC ,  DREGE EMMANUEL ,  BAO JUNWEI ,  DODDI SRINIVAS ,  VUONG VI

    Inventor： DREGE EMMANUEL ,  BAO JUNWEI ,  DODDI SRINIVAS ,  VUONG VI

    IPC: G01N21/956 ,  G06F19/00

    CPC classification number: G03F7/70516 ,  G01N21/956 ,  G03F7/70625

    Abstract: To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.

    Abstract translation: 为了生成用于半导体结构的光学计量的系数组，获得用于一组参数的至少三个光学计量信号。 光学计量信号指示从半导体结构衍射的光，并且该组参数中的至少一个参数的值被改变以产生每个信号。 获得所述至少三个光学度量信号之间的函数关系，所述函数关系包括至少三个系数值。 确定来自功能关系的至少三个系数值的至少三组系数。

    IN-DIE OPTICAL METROLOGY
    10.
    发明申请
    IN-DIE OPTICAL METROLOGY 审中-公开

    公开(公告)号：WO2007123696A3

    公开(公告)日：2007-11-01

    申请号：PCT/US2007/007932

    申请日：2007-03-29

    Applicant: TOKYO ELECTRON LIMITED ,  LI, Shifang ,  BAO, Junwei ,  VUONG, Vi

    Inventor： LI, Shifang ,  BAO, Junwei ,  VUONG, Vi

    IPC: G01N21/86 ,  G01V8/00

    Abstract: To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.

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