公开(公告)号：WO2013006447A3

公开(公告)日：2013-01-10

申请号：PCT/US2012/044968

申请日：2012-06-29

Applicant: HENKEL CORPORATION ,  PEDDI, Raj ,  GASA, Jeffrey ,  KURIYAMA, Kenji ,  YOO, Hoseung

Inventor： PEDDI, Raj ,  GASA, Jeffrey ,  KURIYAMA, Kenji ,  YOO, Hoseung

IPC: H01L21/78 ,  H01L21/301

Abstract: A method of preparing semiconductor dies from a semiconductor wafer having a plurality of fabrication regions separated by dicing lines on the top side of the wafer, and an adhesive coating on the back side of the wafer, comprises applying a repellent material to the fabrication regions and dicing lines where the adhesive coating is not intended to be printed; applying the adhesive coating to the back side of the wafer; removing the repellent material; and separating the wafer along the dicing lines into individual dies.

公开(公告)号：WO2010124179A3

公开(公告)日：2010-10-28

申请号：PCT/US2010/032193

申请日：2010-04-23

Applicant: HENKEL CORPORATION ,  YOO, Hoseung

Inventor： YOO, Hoseung

IPC: H01L21/78 ,  H01L21/304

Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies using both a dicing before grinding operation and a wafer back side adhesive coating includes the step of applying a water or organic solvent soluble material into the partially cut/etched dicing lines and over the top surface of the circuits to prevent the ingress of wafer back side coating into the dicing streets and interference during singulation.

公开(公告)号：WO2010124179A2

公开(公告)日：2010-10-28

申请号：PCT/US2010032193

申请日：2010-04-23

Applicant: HENKEL CORP ,  YOO HOSEUNG

Inventor： YOO HOSEUNG

IPC: H01L21/78 ,  H01L21/304

CPC classification number: H01L21/78

Abstract: A method for preparing a semiconductor wafer into individual semiconductor dies using both a dicing before grinding operation and a wafer back side adhesive coating includes the step of applying a water or organic solvent soluble material into the partially cut/etched dicing lines and over the top surface of the circuits to prevent the ingress of wafer back side coating into the dicing streets and interference during singulation.

Abstract translation: 使用研磨操作之前的切割和晶片背面粘合剂涂布将半导体晶片制备成单个半导体管芯的方法包括将水或有机溶剂可溶性材料施加到部分切割/蚀刻的切割线中并在顶表面上的步骤 的电路，以防止晶片背面涂层进入切割街道，并在分割期间产生干扰。

公开(公告)号：WO2009152221A1

公开(公告)日：2009-12-17

申请号：PCT/US2009/046866

申请日：2009-06-10

Applicant: HENKEL CORPORATION ,  YOO, Hoseung

Inventor： YOO, Hoseung

IPC: H01L21/58 ,  H01L21/78

CPC classification number: H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2924/3512

Abstract: The invention provides methods for depositing a coating onto the entire backside of a semiconductor wafer. The methods of the invention address the deficiencies typically associated with deposition of coatings onto the backside of semiconductor wafers. Since the methods of the invention result in wafers wherein a coating has been dispensed all the way to the edge of the wafer, there is minimal chip flying during dicing, and minimal wafer breakage and chip breakage. In addition, the methods of the invention result in a marked decrease in waste when compared to traditional spin coating methods.

Abstract translation: 本发明提供了在半导体晶片的整个背面上沉积涂层的方法。 本发明的方法解决了通常与涂层沉积到半导体晶片的背面相关的缺陷。 由于本发明的方法导致其中涂层已经一直分配到晶片的边缘的晶片，因此在切割期间芯片飞行最小，并且最小的晶片断裂和断屑。 此外，与传统的旋涂方法相比，本发明的方法导致废物显着减少。

公开(公告)号：WO2013006447A2

公开(公告)日：2013-01-10

申请号：PCT/US2012044968

申请日：2012-06-29

Applicant: HENKEL CORP ,  PEDDI RAJ ,  GASA JEFFREY ,  KURIYAMA KENJI ,  YOO HOSEUNG

Inventor： PEDDI RAJ ,  GASA JEFFREY ,  KURIYAMA KENJI ,  YOO HOSEUNG

CPC classification number: H01L21/78 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/27009 ,  H01L2224/27416 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2224/27 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of preparing semiconductor dies from a semiconductor wafer having a plurality of fabrication regions separated by dicing lines on the top side of the wafer, and an adhesive coating on the back side of the wafer, comprises applying a repellent material to the fabrication regions and dicing lines where the adhesive coating is not intended to be printed; applying the adhesive coating to the back side of the wafer; removing the repellent material; and separating the wafer along the dicing lines into individual dies.

Abstract translation: 一种半导体晶片的半导体晶片的制造方法，其特征在于，在所述晶片的上侧具有由切割线分隔开的多个制造区域和所述晶片的背面侧的粘合剂涂层的半导体晶片的制造方法， 不打印打印粘合剂涂层的切割线; 将粘合剂涂层施加到晶片的背面; 去除驱虫剂材料; 以及将所述晶片沿切割线分离成单独的模具。