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1.发明申请尖端形成部材及びその応用装置、並びに尖端形成部材の製造方法 审中-公开SHARP END FORMING MEMBER，SHARP END FORMING MEMBER，APPARATUS WHEREIN SUCH SHARP END FORMING MEMBER IS APPLIED AND METHOD FOR FORMING SHARP END FORMUS MEMBER
公开(公告)号：WO2007029499A1
公开(公告)日：2007-03-15
申请号：PCT/JP2006/316486
申请日：2006-08-23
IPC: H01J9/02 , G01N13/12 , G01N13/16 , H01J37/073
CPC classification number: H01J9/025 , G01Q70/16 , H01J37/073
Abstract: Provided is a sharpening method by which an end can be sharpened more than an end sharpened by the conventional machining and polishing. A sharpened sharp end forming member and an apparatus wherein such sharp end forming member is applied are also provided. A sharp end region (2) is formed on a conductive member (1) or a conductive film forming member, an insulating film (6) is formed to cover the surface of a sharp end of the sharp end region (2), and a counter electrode (7) is arranged to face the sharp end. An electric field of a magnitude that permits a dark current to flow without generating discharge is applied between the sharp end and the counter electrode (7) to melt the sharp end once, and a pyramid-shaped single-crystallized or recrystallized sharpest end section (8) is grown.
Abstract translation: 提供了一种锐化方法，通过该方法，端部可以比通过常规机械加工和抛光削尖的端头更锋利。 还提供了锋利的尖端形成构件和其中施加这种尖端形成构件的装置。 在导电构件（1）或导电膜形成构件上形成尖端区域（2），形成绝缘膜（6）以覆盖尖端区域（2）的尖端的表面，并且 对置电极（7）布置成面对尖端。 在尖端和对电极（7）之间施加允许暗电流流动而不产生放电的电场的电场，以使尖端熔化一次，并且将金字塔形的单结晶或再结晶的尖锐端部（ 8）生长。
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公开(公告)号：WO2002080258A1
公开(公告)日：2002-10-10
申请号：PCT/JP2002/003073
申请日：2002-03-28
IPC: H01L21/314
CPC classification number: H01L21/76829 , H01L21/318 , H01L21/76835 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
Abstract: An integrated circuit structure, wherein boron nitride films are provided as protective films (34) between inter-layer insulation films (33) with a low dielectric constant formed of organic coated films or porous films so as to form an inter-layer insulation multi-layer film, whereby, since the inter-layer insulation films (33) with a low dielectric constant are combined with the boron nitride films with excellent mechanical and chemical resistances, high heat conductivity, and low dielectric constant, a reduction in dielectric constant can be achieved in such a state that adhesiveness and hygroscopic resistance are maintained.
Abstract translation: 一种集成电路结构，其中氮化硼膜被设置为由有机涂层膜或多孔膜形成的具有低介电常数的层间绝缘膜（33）之间的保护膜（34），以形成层间绝缘多层膜 因此，由于具有低介电常数的层间绝缘膜（33）与具有优异的机械和化学电阻，高导热性和低介电常数的氮化硼膜组合，因此可以降低介电常数 在保持粘合性和吸湿性的状态下实现。
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公开(公告)号：WO2002080256A1
公开(公告)日：2002-10-10
申请号：PCT/JP2002/003071
申请日：2002-03-28
IPC: H01L21/314
CPC classification number: H01L21/02274 , C04B35/583 , C23C16/30 , C23C16/342 , C23C16/36 , H01L21/02112 , H01L21/318
Abstract: A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and reacting hydrogen gas-diluted diborane gas (13) to form a boron nitride film (15) on a substrate (4), whereby the boron nitride film (15) with excellent mechanical and chemical resistances, high heat conductivity, and a low dielectric constant of (k) can be formed on the substrate at a high rate.
Abstract translation: 一种成膜方法，包括以下步骤：在成膜室（2）中产生等离子体（10），主要在成膜室（2）中激发氮气（11），并使氢气稀释的乙硼烷气体（13）反应， 在基板（4）上形成氮化硼膜（15），由此可以在基板上形成具有优异的机械和化学电阻，高导热性和低介电常数（k）的氮化硼膜（15） 高速率。
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公开(公告)号：WO2003023842A1
公开(公告)日：2003-03-20
申请号：PCT/JP2002/009227
申请日：2002-09-10
IPC: H01L21/314
CPC classification number: H01L21/02112 , C23C16/30 , C23C16/36 , H01L21/02345 , H01L21/02348 , H01L21/318 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76835
Abstract: A method for forming a film having a low permittivity, characterized in that it comprises the steps of generating a plasma in a film forming chamber, reacting nitrogen atoms with boron and carbon in the film forming chamber to form a boron-carbon-nitrogen film on a substrate, and then irradiating the resulting film with a light. The method allows the formation of a thin boron-carbon-nitrogen film exhibiting a reduced permittivity.
Abstract translation: 一种形成具有低介电常数的膜的方法，其特征在于包括以下步骤：在成膜室中产生等离子体，在成膜室中使氮原子与硼和碳反应，形成硼碳氮膜 基板，然后用光照射所得的膜。 该方法允许形成具有降低的介电常数的薄硼碳 - 氮膜。
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公开(公告)号：WO2003005432A1
公开(公告)日：2003-01-16
申请号：PCT/JP2002/006839
申请日：2002-07-05
IPC: H01L21/314
CPC classification number: H01L21/02274 , C23C16/36 , H01L21/02112 , H01L21/318 , H01L21/76828 , H01L21/76829
Abstract: A method for forming a film having a low dielectric constant, characterized in that it comprises the steps of generating a plasma in a chamber for forming a film, reacting a nitrogen atom with boron and carbon in the chamber to thereby form a boron−carbon−nitrogen film on a substrate, and then holding the formed film to have an elevated temperature of 250 to 550 ˚ C; and an apparatus for practicing the method. The method allows the formation of a boron−carbon−nitrogen film having an extremely low dielectric constant.
Abstract translation: 一种形成具有低介电常数的膜的方法，其特征在于它包括以下步骤：在用于形成膜的室中产生等离子体，使氮原子与室中的硼和碳反应，从而形成硼 - 碳 - 氮气膜，然后保持成型膜的升温温度为250〜550℃; 以及实施该方法的装置。 该方法允许形成具有极低介电常数的硼 - 碳 - 氮膜。
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Patent Agency Ranking
公开(公告)号：WO2003069649A1
公开(公告)日：2003-08-21
申请号：PCT/JP2002/005964
申请日：2002-06-14
IPC: H01J1/304
CPC classification number: B82Y10/00 , H01J3/021 , H01J2201/304
Abstract: A high-performance electron emitter capable of emitting electrons at low voltage with high luminance and leading to further improvement of the electron emission characteristic of a Spindt-type cold cathode, a carbon nanotube, and a carbon nanofiber. The electron emitter is provided as a key device of a flat panel display, an imager, an electron beam device, a microwave traveling-wave tube, or an illuminator. A film having an electric field therein, having a thickness of below 50 nm and an electron affinity of below 4.0 eV is formed on a Spindt-type cold cathode, a carbon nanotube, a carbon nanofiber, and a metal or semiconductor substrate having an irregular surface to fabricate an electron emitter. The film is made of a compound of a nitride atom and a group III element atom, such as aluminum nitride, boron nitride, aluminum boron nitride, aluminum gallium nitride, or boron gallium nitride, boron carbon nitride, boron carbide, carbon nitride, or an oxide containing boron.
Abstract translation: 能够以高亮度低电压发射电子且进一步提高Spindt型冷阴极，碳纳米管和碳纳米纤维的电子发射特性的高性能电子发射体。 电子发射器被提供为平板显示器，成像器，电子束器件，微波行波管或照明器的关键器件。 在Spindt型冷阴极，碳纳米管，碳纳米纤维和具有不规则形状的金属或半导体衬底上形成厚度小于50nm，电子亲和力低于4.0eV的膜， 表面以制造电子发射体。 该膜由氮化物，氮化硼，氮化硼，氮化镓，氮化硼，氮化硼，碳化硼，氮化碳等氮化物和III族元素原子的化合物构成。 含硼的氧化物。
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公开(公告)号：WO2003009392A1
公开(公告)日：2003-01-30
申请号：PCT/JP2002/007279
申请日：2002-07-17
IPC: H01L29/80
CPC classification number: H01L29/66924 , H01L29/2003 , H01L29/66318 , H01L29/66462 , H01L29/7371 , H01L29/7787
Abstract: A semiconductor surface treatment and film deposition method realizing surface protection and surface inactivation using a boron nitride film, a high performance semiconductor device fabricated using the surface protection technology or the surface inactivation technology, and an electronic apparatus of a communication system comprising the semiconductor device. The inventions are characterized by comprising a film characterized by containing at least boron and nitrogen atoms.
Abstract translation: 使用氮化硼膜实现表面保护和表面失活的半导体表面处理和膜沉积方法，使用表面保护技术或表面失活技术制造的高性能半导体器件，以及包括半导体器件的通信系统的电子设备。 本发明的特征在于包括特征在于至少含有硼和氮原子的膜。
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公开(公告)号：WO2002080257A1
公开(公告)日：2002-10-10
申请号：PCT/JP2002/003072
申请日：2002-03-28
IPC: H01L21/314
CPC classification number: H01L21/02274 , C23C16/30 , C23C16/36 , C23C16/448 , H01L21/02112 , H01L21/314 , H01L21/318
Abstract: A film forming method, comprising the steps of generating plasma (10) in a film forming chamber (2), exciting mainly nitrogen gas (11) in the film forming chamber (2), and mixing, for reaction, hydrogen gas-diluted diborane gas (13) with evaporated carbon obtained by controlling the heating by a wound carbon heater (14a) to form a boron carbonitride film (15) on a substrate (4), whereby the boron carbonitride film (15) with excellent hygroscopic resistance, mechanical and chemical resistances, high heat conductivity, and a low dielectric constant of (k) can be formed adhesively, stably, and uniformly on the large area of the substrate at a high rate irrespective of the types of films.
Abstract translation: 一种成膜方法，包括以下步骤：在成膜室（2）中产生等离子体（10），主要在成膜室（2）中激发氮气（11），并将氢气稀释的乙硼烷 通过控制利用卷绕碳加热器（14a）的加热得到的带有蒸发碳的气体（13），在基板（4）上形成碳氮化硼膜（15），由此形成具有优异耐吸湿性的碳氮化硼膜（15），机械 并且无论膜的种类如何，都可以高速率地在基板的大面积上以粘合，稳定和均匀的方式形成化学电阻，高导热性和低介电常数（k）。
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公开(公告)号：WO2004006313A1
公开(公告)日：2004-01-15
申请号：PCT/JP2003/008421
申请日：2003-07-02
IPC: H01L21/205
CPC classification number: C23C16/4412
Abstract: 三塩化ホウ素ガス等を原料ガスとして薄膜の合成を行う場合、未反応ガスなどが排気系などの正常動作を阻害し、良質な薄膜の合成が効率よくできない。このような問題を排除し、再現性良く薄膜合成ができる成膜装置を提供する。 成膜装置の反応室の下流側に冷却部を設け、未反応ガスなどを液化させて回収する。冷却部は金属管で作製し、冷却効率を上げるため、らせん部分を設け、その下流側に被化した物質を溜める領域も設けている。連統的に成膜が行えるようにバイパスラインが設置されている。また、回収物質の処理のため、冷却部が容易に脱着できるように作製されている。
Abstract translation: 一种用于形成膜的装置，其具有设置在反应室下游的用于液化用于回收的未反应气体等的冷却部分，用于保持设置在冷却部分下游的液化材料的部分，以及用于 连续地进行成膜操作，其中冷却部分由金属管制成，具有用于提高冷却效率的螺旋部分，并且以易于拆卸的方式制造，用于处理回收的材料。 该装置可用于以三氯化硼气体等作为原料以高效率合成高质量的薄膜，而不会由于未反应气体等的干扰而产生不利影响 排气系统等。
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公开(公告)号：WO2003060942A1
公开(公告)日：2003-07-24
申请号：PCT/JP2002/000287
申请日：2002-01-17
IPC: H01J1/304
CPC classification number: H01J1/304
Abstract: An electron emission device which eliminates a complicated process of forming a pinnacle shape, solves a problem with a boron nitride thin film to improve adhesiveness, and operates at a low voltage. A boron nitride carbon thin film (3) containing boron (composition ratio, x), carbon (composition ratio, y) and nitrogen (composition ratio, z) with composition ratios satisfying the relations, 0
Abstract translation: 一种消除形成顶峰形状的复杂工艺的电子发射装置，解决了氮化硼薄膜的问题，以提高粘合性，并且在低电压下工作。 含有硼（组成比，x），碳（组成比，y）和氮（组成比z）的组成比满足关系的氮化硼碳薄膜（3）0 <= x <1,0 < 在其表面上具有凹凸的衬底或半导体衬底（硅衬底（1），氮化镓层（2））上提供电连接的第一金属体 （引线电极（5））设置在薄膜（3）上电绝缘，第二金属体（阳极电极（7））与薄膜（3）相对设置，并且具有来自第一 金属体（5）。
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