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    PARTICLE REFLOW ETCHING
    1.
    发明申请
    PARTICLE REFLOW ETCHING 审中-公开
    颗粒反射蚀刻

    公开(公告)号：WO2010068460A2

    公开(公告)日：2010-06-17

    申请号：PCT/US2009065784

    申请日：2009-11-24

    Applicant: 3M INNOVATIVE PROPERTIES CO ,  ZHANG JUN-YING ,  SMITH TERRY L ,  HAASE MICHAEL A ,  YANG ZHAOHUI

    Inventor： ZHANG JUN-YING ,  SMITH TERRY L ,  HAASE MICHAEL A ,  YANG ZHAOHUI

    IPC: H01L21/302

    CPC classification number: H01L33/22 ,  H01L33/0095

    Abstract: A particle reflow etching method. Coating a dispersed particle solution on a substrate, melting the particles, and etching the substrate. The particles may optionally be etched before melting. Applying a hard mask to a substrate and coating a dispersed particle solution on the hard mask, melting the particles and etching the surface of the hard mask. An article with a substrate and a coating of melted particles. The article may also have a hard mask on the substrate.

    Abstract translation: 一种粒子回流蚀刻方法。 将分散的颗粒溶液涂布在基材上，熔化颗粒并蚀刻基材。 可以任选地在熔融之前蚀刻颗粒。 将硬掩模施加到基底上并将分散的颗粒溶液涂覆在硬掩模上，熔化颗粒并蚀刻硬掩模的表面。 具有底物和熔融颗粒涂层的物品。 该制品也可以在基材上具有硬掩模。

    LIGHT EXTRACTION FILMS FOR ORGANIC LIGHT EMITTING DEVICES (OLEDS)
    3.
    发明申请
    LIGHT EXTRACTION FILMS FOR ORGANIC LIGHT EMITTING DEVICES (OLEDS) 审中-公开
    有机发光装置（OLEDs）的光提取膜

    公开(公告)号：WO2012054165A3

    公开(公告)日：2012-06-14

    申请号：PCT/US2011052453

    申请日：2011-09-21

    Applicant: 3M INNOVATIVE PROPERTIES CO

    Inventor： THOMPSON DAVID SCOTT ,  WOLK MARTIN B ,  LAMANSKY SERGEY A ,  KOLB WILLIAM BLAKE ,  HAO ENCAI ,  ZHANG JUN-YING ,  JONES VIVAN W ,  SCHAFFER KEVIN R ,  SHERMAN AUDREY A ,  YANG ZHAOHUI ,  TODERO LESLIE A

    IPC: H01L51/50 ,  H05B33/22

    CPC classification number: H01L51/5275 ,  B32B27/08 ,  B32B2307/40 ,  B32B2457/206 ,  H01L51/5262 ,  Y10T428/24998

    Abstract: Optical films for enhancing light extraction from self-emissive light sources such as bottom-emitting or top-emitting OLEDs are disclosed. The extraction films typically include a flexible carrier film, and a first and second layer carried by the carrier film. The first or second layer has a nanovoided morphology and includes a polymer binder, and may also have a refractive index less than 1.35 or 1.3. An embedded structured surface of light extraction elements is formed between the first and second layers. The light extraction elements may be primarily diffractive elements adapted to be disposed within an evanescent zone of the OLED, or they may be primarily refractive elements adapted to be disposed outside the evanescent zone. The extraction film may also include a third layer, and a second embedded structured surface may be formed between the third layer and the first layer.

    Abstract translation: 公开了用于增强从诸如底部发射或顶部发射OLED的自发射光源的光提取的光学膜。 提取膜通常包括柔性载体膜，以及由载体膜承载的第一和第二层。 第一层或第二层具有纳米形态并且包括聚合物粘合剂，并且还可以具有小于1.35或1.3的折射率。 在第一和第二层之间形成光提取元件的嵌入结构化表面。 光提取元件可以是适于被布置在OLED的消逝区域内的衍射元件，或者它们可以主要是适于设置在ev逝区域外部的折射元件。 提取膜还可以包括第三层，并且可以在第三层和第一层之间形成第二嵌入结构化表面。

    LIGHT EXTRACTION FILMS FOR INCREASING PIXELATED OLED OUTPUT WITH REDUCED BLUR
    4.
    发明申请
    LIGHT EXTRACTION FILMS FOR INCREASING PIXELATED OLED OUTPUT WITH REDUCED BLUR 审中-公开
    用于增加具有减少的黑色的像素化OLED输出的光提取膜

    公开(公告)号：WO2012054229A3

    公开(公告)日：2012-07-05

    申请号：PCT/US2011054704

    申请日：2011-10-04

    Applicant: 3M INNOVATIVE PROPERTIES CO

    Inventor： THOMPSON DAVID S ,  WOLK MARTIN B ,  LAMANSKY SERGEY ,  YANG ZHAOHUI ,  ZHANG JUN-YING ,  HAO ENCAI ,  KOLB WILLIAM BLAKE ,  SHERMAN AUDREY A ,  SCHAFFER KEVIN R

    IPC: H01L51/50 ,  H05B33/22

    CPC classification number: H01L51/5275 ,  B29C35/02 ,  B29C35/0866 ,  B29C59/046 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2035/0833 ,  B29C2035/0838 ,  B29C2035/0877

    Abstract: Optical films for enhancing light extraction from self-emissive pixelated OLEDs, without introducing significant pixel blur, are disclosed. The extraction films include a flexible carrier film, and a first and second layer carried by the carrier film. The first layer has a nanovoided morphology, includes a polymer binder, and may have a refractive index less than 1.35 or 1.3. An embedded structured surface of light extraction elements is formed between the first and second layers. The extraction film includes a major coupling surface for attachment to an outer surface of the light source. The film is configured such that a land portion between the structured surface and the major coupling surface is thinner than a specified amount, for example, less than 50, 25, or 10 microns, or less than a thickness of the carrier film.

    Abstract translation: 公开了用于增强来自自发射像素化OLED的光提取而不引入显着像素模糊的光学膜。 提取膜包括柔性载体膜和由载体膜承载的第一和第二层。 第一层具有纳米空隙形态，包括聚合物粘合剂，并且可以具有小于1.35或1.3的折射率。 光提取元件的嵌入式结构化表面形成在第一层和第二层之间。 提取膜包括用于附着到光源的外表面的主耦合表面。 膜被构造成使得结构化表面和主耦合表面之间的接地部分比规定量更薄，例如小于50,25或10微米，或者小于载体膜的厚度。

    PIXELATED LED
    5.
    发明申请
    PIXELATED LED 审中-公开
    像素LED

    公开(公告)号：WO2011014490A3

    公开(公告)日：2011-04-28

    申请号：PCT/US2010043344

    申请日：2010-07-27

    Applicant: 3M INNOVATIVE PROPERTIES CO ,  LEATHERDALE CATHERINE A ,  YANG ZHAOHUI

    Inventor： LEATHERDALE CATHERINE A ,  YANG ZHAOHUI

    IPC: H01L33/20 ,  H01L33/48

    CPC classification number: H01L27/156 ,  H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A pixelated light emitting diode (LED) and a method for pixelating an LED are described. The pixelated LED includes two or more monolithically integrated electroluminescent elements disposed adjacent each other on a substrate, wherein at least a portion of each electroluminescent element immediately adjacent the substrate includes an inverted truncated pyramidal shape. The method for pixelating an LED includes selectively removing material from the major surface of an LED to a depth below the emissive region, thereby forming an array of inverted truncated pyramid shapes. The efficiency of the pixelated LEDs can be improved by incorporating the truncated pyramidal shape. Additionally, the crosstalk between adjacent LED pixels can be reduced by incorporating the truncated pyramidal shape.

    Abstract translation: 描述了像素化发光二极管（LED）和用于像素化LED的方法。 像素化LED包括在衬底上彼此相邻布置的两个或更多个单片集成电致发光元件，其中紧邻衬底的每个电致发光元件的至少一部分包括倒截头金字塔形状。 用于使LED像素化的方法包括从LED的主表面有选择地去除材料至发射区下方的深度，由此形成倒置的截头金字塔形状的阵列。 像素化LED的效率可以通过合并截头金字塔形状来改善。 另外，通过合并截头金字塔形状，可以减小相邻LED像素之间的串扰。

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