READ THRESHOLD ESTIMATION IN ANALOG MEMORY CELLS USING SIMULTANEOUS MULTI-VOLTAGE SENSE
    1.
    发明申请
    READ THRESHOLD ESTIMATION IN ANALOG MEMORY CELLS USING SIMULTANEOUS MULTI-VOLTAGE SENSE 审中-公开
    使用同时多电压检测在模拟记忆细胞中读取阈值估计

    公开(公告)号:WO2014031366A1

    公开(公告)日:2014-02-27

    申请号:PCT/US2013/054386

    申请日:2013-08-09

    申请人: APPLE INC

    摘要: A method includes dividing a group of analog memory cells into multiple subsets (90). The memory cells in the group are sensed simultaneously by performing a single sense operation, while applying to the subsets of the memory cells respective different sets of read thresholds, so as to produce respective readout results (94). An optimal set of the read thresholds is estimated by processing the multiple readout results obtained from the respective subsets using the different sets of the read thresholds (98).

    摘要翻译: 一种方法包括将一组模拟存储器单元划分成多个子集(90)。 通过执行单个检测操作同时对存储器单元的子集分别对应于不同的读取阈值集来同时检测组中的存储器单元,从而产生相应的读出结果(94)。 通过使用不同的读取阈值集(98)处理从各个子集获得的多个读出结果来估计读取阈值的最佳集合。