公开(公告)号：WO2009017894A1

公开(公告)日：2009-02-05

申请号：PCT/US2008/067493

申请日：2008-06-19

Applicant: APPLIED MATERIALS, INC. ,  JENNINGS, Dean ,  THOMAS, Timothy N. ,  MOFFATT, Stephen ,  LI, Jiping ,  ADAMS, Bruce E. ,  HOWELLS, Samuel C.

Inventor： JENNINGS, Dean ,  THOMAS, Timothy N. ,  MOFFATT, Stephen ,  LI, Jiping ,  ADAMS, Bruce E. ,  HOWELLS, Samuel C.

IPC: B23K26/067 ,  H01L21/268

CPC classification number: G02B27/283 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  G02B27/10 ,  G02B27/144 ,  G02B27/145 ,  G02B27/48 ,  H01L21/268 ,  H01L21/67115

Abstract: A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. For some embodiments employing a pulsed light source, the output pulse may be stretched relative to the input pulse width. The methods and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.

Abstract translation: 提供了一种用于在时间和空间上从光源（例如脉冲激光）去除相干光的方法和装置，以提供强烈和均匀的照明。 对于采用脉冲光源的一些实施例，可以相对于输入脉冲宽度拉伸输出脉冲。 本文描述的方法和装置可以结合到需要强烈均匀照明的任何应用中，例如脉冲激光退火，焊接，烧蚀和晶片步进照明。

公开(公告)号：WO2008063840A1

公开(公告)日：2008-05-29

申请号：PCT/US2007/083271

申请日：2007-11-01

Applicant: APPLIED MATERIALS, INC. ,  RANISH, Joseph M. ,  ADAMS, Bruce E.

Inventor： RANISH, Joseph M. ,  ADAMS, Bruce E.

IPC: F27B5/14

CPC classification number: C23C16/46 ,  C21D1/34

Abstract: Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.

Abstract translation: 本文提供了用于补偿基板加热过程中的热分布的方法。 在一个实施例中，处理衬底的方法包括确定由工艺产生的衬底的初始热分布; 基于初始热分布在衬底上施加补偿热分布; 并执行该过程以在衬底上产生期望的热分布。 在本发明的其它实施例中，通过在执行该过程之前通过调节每单位面积加热的局部质量，每单位面积的局部热容量或接近该衬底的组分的吸收率或反射率来补偿初始衬底热分布。 在另一个实施例中，由边缘环提供到衬底的热可以在衬底加热过程之前或期间被控制。

公开(公告)号：WO2016014173A1

公开(公告)日：2016-01-28

申请号：PCT/US2015/035851

申请日：2015-06-15

Applicant: APPLIED MATERIALS, INC.

Inventor： HUNTER, Aaron Muir ,  SADE, Amikam ,  HOWELLS, Samuel C. ,  HOLMGREN, Douglas E. ,  ADAMS, Bruce E. ,  MOFFITT, Theodore P. ,  MOFFATT, Stephen

IPC: H01L21/324 ,  H01L21/67

CPC classification number: B23K26/70 ,  B23K26/0066 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/082 ,  B23K26/083 ,  B23K26/352 ,  H01L21/268 ,  H01L21/67115

Abstract: Apparatus, system, and method for thermally treating a substrate. A source of pulsed electromagnetic energy can produce pulses at a rate of at least 100 Hz. A movable substrate support can move a substrate relative to the pulses of electromagnetic energy. An optical system can be disposed between the energy source and the movable substrate support, and can include components to shape the pulses of electromagnetic energy toward a rectangular profile. A controller can command the source of electromagnetic energy to produce pulses of energy at a selected pulse rate. The controller can also command the movable substrate support to scan in a direction parallel to a selected edge of the rectangular profile at a selected speed such that every point along a line parallel to the selected edge receives a predetermined number of pulses of electromagnetic energy.

Abstract translation: 用于热处理基底的装置，系统和方法。 脉冲电磁能源可以以至少100Hz的速率产生脉冲。 可移动的衬底支撑件可相对于电磁能的脉冲移动衬底。 光学系统可以设置在能量源和可移动衬底支撑件之间，并且可以包括将电磁能脉冲朝向矩形轮廓成形的部件。 控制器可以命令电磁能量源以选定的脉冲速率产生能量脉冲。 控制器还可以以可选择的速度命令可移动衬底支撑件沿平行于所述矩形轮廓的选定边缘的方向扫描，使得沿着与选定边缘平行的线的每个点接收预定数量的电磁能量脉冲。

公开(公告)号：WO2010036621A2

公开(公告)日：2010-04-01

申请号：PCT/US2009/057708

申请日：2009-09-21

Applicant: APPLIED MATERIALS, INC. ,  LI, Jiping ,  HUNTER, Aaron Muir ,  ADAMS, Bruce E. ,  MOFFITT, Theodore ,  MOFFATT, Stephen

Inventor： LI, Jiping ,  HUNTER, Aaron Muir ,  ADAMS, Bruce E. ,  MOFFITT, Theodore ,  MOFFATT, Stephen

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/324

Abstract: A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

Abstract translation: 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入，注入十八硼烷衬底。 然后将衬底表面退火以完全解离并激活硼簇。 退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

公开(公告)号：WO2017058638A1

公开(公告)日：2017-04-06

申请号：PCT/US2016/053191

申请日：2016-09-22

Applicant: APPLIED MATERIALS, INC.

Inventor： BANGAR, Mangesh ,  ADAMS, Bruce E. ,  HOLLAR, Kelly E. ,  MAYUR, Abhilash J. ,  DAI, Huixiong ,  CHEN, Jaujiun

IPC: G03F7/20 ,  G03F1/72 ,  G03F1/00

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

Abstract translation: 确定包括在衬底上的层的晶片的校准曲线。 校准曲线表示作为与晶片暴露于光的相关联的处理参数的函数的局部参数变化。 测量晶片的局部参数。 基于晶片的局部参数确定重叠误差。 基于校准曲线计算处理图，以校正晶片的覆盖误差。 治疗图表示作为晶片上位置的函数的治疗参数。

公开(公告)号：WO2013090581A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/069518

申请日：2012-12-13

Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen ,  HOLMGREN, Douglas E. ,  HOWELLS, Samuel C. ,  TONG, Edric ,  ADAMS, Bruce E. ,  LI, Jiping ,  HUNTER, Aaron Muir

Inventor： MOFFATT, Stephen ,  HOLMGREN, Douglas E. ,  HOWELLS, Samuel C. ,  TONG, Edric ,  ADAMS, Bruce E. ,  LI, Jiping ,  HUNTER, Aaron Muir

IPC: H01L21/268 ,  H01L21/26

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

Abstract translation: 公开了用于组合放大辐射束的装置和方法。 光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。 在一些实施例中，相应的入射角也可以不同。 准直光学元件具有使光束准直的光学特性。 光学性质可以是折射或反射的，或其组合。 还可以提供收集光学器件以将多个光束引导到准直光学元件。 光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

公开(公告)号：WO2010059300A2

公开(公告)日：2010-05-27

申请号：PCT/US2009/059857

申请日：2009-10-07

Applicant: APPLIED MATERIALS, INC. ,  PATALAY, Kailash Kiran ,  HUNTER, Aaron Muir ,  ADAMS, Bruce E.

Inventor： PATALAY, Kailash Kiran ,  HUNTER, Aaron Muir ,  ADAMS, Bruce E.

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/67248

Abstract: A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.

Abstract translation: 基板处理系统包括处理腔室，用于支撑设置在处理腔室内的基板的基座以及耦合到处理腔室的光学高温测定组件，以测量基本上源自一部分的发射光 基座或基板。 光学高温测定组件还包括光接收器和光学检测器。 光学高温测定组件接收一部分发射光，并且基于至少一个波长附近的发射光部分的强度来确定衬底的温度。 在处理期间测量基板的温度的方法包括在支撑基板或基座的基座的一部分附近布置光管，将光管的端部屏蔽以避免杂散光，从而使得光管的端部接收来自 基座或基板的该部分，用气体吹扫光管的端部以减少光管端部的污染，检测从基座发射并由光管接收的一部分光，并且确定温度 从基座或基板发出的光的至少一个波长附近的部分的强度确定基板的厚度。

公开(公告)号：WO2015026861A1

公开(公告)日：2015-02-26

申请号：PCT/US2014/051747

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHER, Christopher Dennis ,  XIE, Peng ,  MOFFATT, Stephen ,  ADAMS, Bruce E. ,  FOAD, Majeed A.

IPC: H01L43/08

CPC classification number: C30B30/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/5806 ,  C30B19/08 ,  C30B29/02

Abstract: A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a base layer having grains on a wafer substrate where the wafer substrate is a part of a wafer on the work platform; and a magnetic assembly fixed relative to the heating element for aligning the grains of the base layer using a magnetic field of 10 Tesla or greater for formation of an interconnect having a crystal orientation of grains in the interconnect matching the crystal orientation of the grains of the base layer.

Abstract translation: 磁场引导晶体取向系统及其磁场引导晶体取向系统的操作方法，包括：工作平台; 在工作平台上方的加热元件，用于选择性地加热晶片衬底上具有晶片的基底层，其中晶片衬底是工作平台上晶片的一部分; 以及相对于所述加热元件固定的磁性组件，用于使用10特斯拉或更大的磁场对准所述基底层的晶粒，以形成所述互连中的晶粒取向与所述晶体的晶体取向相匹配 基层。

公开(公告)号：WO2015023791A1

公开(公告)日：2015-02-19

申请号：PCT/US2014/050952

申请日：2014-08-13

Applicant: APPLIED MATERIALS, INC.

Inventor： ADAMS, Bruce E.

IPC: H01L21/324 ,  H01L21/02

CPC classification number: G02F1/0147 ,  B23K26/0006 ,  B23K26/0066 ,  B23K26/0622 ,  B23K26/0648 ,  B23K26/0853 ,  B23K2201/40 ,  B23K2203/56 ,  G02F1/19 ,  G02F2201/08 ,  G02F2201/346

Abstract: Embodiments of the present invention generally relate to an optical valve that modifies a laser beam to allow more energy to be irradiated onto less absorbing areas on a substrate and less energy to be irradiated onto more absorbing areas on the substrate, thus creating a more uniform heating field. The optical valve is a layered structure comprising a reflective switch layer, an absorbing layer, a thermal resistor and a thermal bath.

Abstract translation: 本发明的实施例一般涉及一种修改激光束以允许更多能量照射到衬底上的较少吸收区域上的光阀，并且较少的能量照射到衬底上的更多吸收区域上，从而产生更均匀的加热 领域。 光阀是包括反射开关层，吸收层，热电阻和热浴的分层结构。

公开(公告)号：WO2014163766A1

公开(公告)日：2014-10-09

申请号：PCT/US2014/015873

申请日：2014-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： RANISH, Joseph M. ,  ADAMS, Bruce E. ,  MOFFATT, Stephen

IPC: H01L21/324

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments described herein generally relate to pyrometry during thermal processing of semiconductor substrates. More specifically, embodiments relate to a pyrometry filter for a thermal process chamber. In certain embodiments, the pyrometry filter selectively filters selected wavelengths of energy to improve a pyrometer measurement. The pyrometry filter may have various geometries which may affect the functionality of the pyrometry filter.

Abstract translation: 本文描述的实施方案通常涉及半导体衬底的热处理期间的高温测定。 更具体地，实施方案涉及用于热处理室的高温计过滤器。 在某些实施方案中，高温测定过滤器选择性地过滤所选择的能量波长以改进高温计测量。 高温计过滤器可以具有可能影响高温计过滤器的功能的各种几何形状。