公开(公告)号：WO2023275316A1

公开(公告)日：2023-01-05

申请号：PCT/EP2022/068183

申请日：2022-06-30

Applicant: HELIO DISPLAY MATERIALS LIMITED

Inventor： DE KEYZER, Gerardus ,  SAKAI, Nobuya ,  WENGER, Bernard

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/027 ,  G03F7/029 ,  G03F7/031 ,  G03F7/033 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/0007 ,  G03F7/0035 ,  G03F7/0047

Abstract: The present invention relates to a process for producing a patterned film comprising particles comprising an AMX compound, which process comprises: (a) providing a photoresist layer disposed on a substrate, which photoresist layer comprises a mixture of a photoresist and particles comprising an AMX compound; (b) defining a pattern on the photoresist layer by exposing regions of the photoresist layer to light and thereby producing a patterned photoresist layer; and (c) treating the patterned photoresist layer with a developer to produce the patterned film comprising particles comprising an AMX compound. The developer may comprise a solvent which has a dielectric constant of at least 6.0. The invention also relates to a process for producing a patterned colour conversion layer and a process for producing a device (such as a display). Further related to the invention is a device intermediate.

公开(公告)号：WO2022015695A1

公开(公告)日：2022-01-20

申请号：PCT/US2021/041376

申请日：2021-07-13

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： MALIK, Sanjay ,  DE, Binod B. ,  REINERTH, William A. ,  DIMOV, Ognian ,  DILOCKER, Stephanie

IPC: C08G73/10 ,  C08J3/24 ,  C08K3/36 ,  C08F283/04 ,  G03F7/0035 ,  G03F7/0037 ,  G03F7/0047 ,  G03F7/027 ,  G03F7/037 ,  H01L2224/27436 ,  H01L2224/29147 ,  H01L2224/2969 ,  H01L2224/2979 ,  H01L24/27 ,  H01L24/29 ,  H01L2924/12041

Abstract: This disclosure relates to a dielectric film forming composition that includes a plurality of (meth)acrylate containing compounds, at least one fully imidized polyimide polymer, and at least one solvent.

公开(公告)号：WO2022005855A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/038758

申请日：2021-06-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAI, Yuqiong ,  SACHAN, Madhur ,  FREED, Regina ,  HWANG, Hoyung, David

IPC: G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  C23C16/06 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/162 ,  G03F7/40

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.