公开(公告)号：WO2017184358A1

公开(公告)日：2017-10-26

申请号：PCT/US2017/026519

申请日：2017-04-07

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW ,  ASM AMERICA, INC.

Inventor： MAES, Jan, Willem ,  KNAEPEN, Werner ,  GRONHEID, Roel ,  SINGH, Arjun

IPC: B05D3/02 ,  B05D3/04 ,  C23C8/00 ,  C23C8/06 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

CPC classification number: H01L21/0338 ,  G03F7/0002 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/32

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

Abstract translation: 公开了一种用退火步骤和沉积步骤形成膜的方法。 该方法包括用于诱导聚合物内自组装或排列的退火步骤。 该方法还包括选择性沉积步骤，以便能够选择性沉积在聚合物上。

公开(公告)号：WO2017184358A8

公开(公告)日：2017-10-26

申请号：PCT/US2017/026519

申请日：2017-04-07

Applicant: ASM IP HOLDING B.V. ,  IMEC VZW

Inventor： MAES, Jan, Willem ,  KNAEPEN, Werner ,  GRONHEID, Roel ,  SINGH, Arjun

IPC: B05D3/02 ,  B05D3/04 ,  C23C8/00 ,  C23C8/06 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

Abstract: A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

公开(公告)号：WO2016083064A1

公开(公告)日：2016-06-02

申请号：PCT/EP2015/075004

申请日：2015-10-28

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D

Inventor： SINGH, Arjun ,  GRONHEID, Roel

IPC: H01L21/027 ,  H01L21/033

CPC classification number: H01L21/31058 ,  G03F7/0002 ,  G03F7/427 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L23/544 ,  H01L27/1085 ,  H01L29/1037 ,  H01L29/66666 ,  H01L2223/54426

Abstract: Method for manufacturing pillar structures in a layer of a semiconductor device, the pillar structures being arranged at positions forming a hexagonal matrix configuration, the method comprising: - embedding alignment pillar structures in a backfill brush polymer layer, the backfill brush polymer layer having a thickness which is about equal to the height of the alignment pillar structures, the alignment pillar structures being at positions corresponding to a subset of the positions of the hexagonal matrix configuration; - providing a BCP layer on a substantially planar surface defined by an upper surface of the alignment pillar structures and the backfill brush polymer layer; - inducing polymer micro phase separation of the BCP polymer layer into pillar structures of a first component of the BCP polymer layer embedded in a second component of the BCP polymer layer, the pillar structures of the first component being arranged at positions forming the hexagonal matrix configuration; and such that on each alignment pillar structure a pillar structure of a first component of the BCP polymer layer is formed; and associated semiconductor structure.

Abstract translation: 在半导体器件层中制造柱结构的方法，所述柱结构布置在形成六边形矩阵构型的位置，所述方法包括：将取向柱结构嵌入回填刷聚合物层中，所述回填刷聚合物层具有厚度 其大约等于对准柱结构的高度，对准柱结构处于与六边形矩阵构型的位置的子集相对应的位置; - 在由所述对准柱结构和所述回填刷聚合物层的上表面限定的基本上平坦的表面上提供BCP层; - 将所述BCP聚合物层的聚合物微相分离引入嵌入在所述BCP聚合物层的第二组分中的BCP聚合物层的第一组分的柱结构中，所述第一组分的柱结构被布置在形成所述六边形矩阵构型的位置 ; 并且在每个取向柱结构上形成BCP聚合物层的第一成分的柱结构; 和相关的半导体结构。