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    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE
    2.
    发明申请
    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE 审中-公开
    在衬底上形成直接自组装层的方法

    公开(公告)号：WO2017184357A1

    公开(公告)日：2017-10-26

    申请号：PCT/US2017/026518

    申请日：2017-04-07

    Applicant: ASM IP HOLDING B.V. ,  IMEC VZW ,  ASM AMERICA, INC.

    Inventor： KNAEPEN, Werner ,  MAES, Jan, Willem ,  STOKHOF, Maarten ,  GRONHEID, Roel ,  SRIRAMAN, Hari, Pathangi

    IPC: H01L21/027 ,  H01L21/768

    Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10 - 2000 Pa.

    Abstract translation: 通过以下步骤在衬底上形成定向自组装（DSA）层的方法：提供衬底; 在衬底上施加包含自组装材料的层; 以及通过在衬底周围提供受控的温度和气体环境来退火该层的自组装材料以形成定向的自组装层。 受控的气体环境包含分子，该分子包含分压在10-2000Pa之间的氧元素

    SEMICONDUCTOR PROCESSING APPARATUS
    5.
    发明申请
    SEMICONDUCTOR PROCESSING APPARATUS 审中-公开

    公开(公告)号：WO2018109552A1

    公开(公告)日：2018-06-21

    申请号：PCT/IB2017/001644

    申请日：2017-12-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： DE ROEST, David, Kurt ,  KNAEPEN, Werner ,  KRZYSZTOF, Kachel

    IPC: H01L21/027 ,  H01L21/67

    Abstract: An apparatus and a method for forming a structure within a semiconductor processing apparatus are disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to perform an infiltration by sequentially pulsing a first precursor and a second precursor on the substrate. The apparatus may also include a first removal system configured for removing at least a portion of the first layer disposed on the substrate while leaving an infiltrated material, wherein the infiltration and the removing at least a portion of the first layer take place within the same semiconductor processing apparatus. A method of forming a structure within a semiconductor processing apparatus is also disclosed, the method including providing a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method may also include performing a first layer infiltration by sequentially pulsing a first precursor and a second precursor on the substrate, wherein an infiltrated material forms in the first layer from the reaction of the first precursor and the second precursor. The method may also include removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and the removing at least a portion of the first layer take place with the same semiconductor processing apparatus.

    SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS
    6.
    发明申请
    SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS 审中-公开

    公开(公告)号：WO2018109553A2

    公开(公告)日：2018-06-21

    申请号：PCT/IB2017/001652

    申请日：2017-12-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： RAAIJMAKERS, Ivo, Johannes ,  MAES, Jan, Willem ,  KNAEPEN, Werner ,  KACHEL, Krzysztof, Kamil

    IPC: C23C16/04

    Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

    METHOD AND APPARATUS FOR FILLING A GAP
    7.
    发明申请
    METHOD AND APPARATUS FOR FILLING A GAP 审中-公开
    用于填充间隙的方法和设备

    公开(公告)号：WO2018020318A1

    公开(公告)日：2018-02-01

    申请号：PCT/IB2017/001050

    申请日：2017-07-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： PORE, Viljami ,  KNAEPEN, Werner ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  VAN AERDE, Steven ,  HAUKKA, Suvi ,  FUKAZAWA, Atsuki ,  FUKUDA, Hideaki

    IPC: H01L21/316 ,  C23C16/455

    CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/45542 ,  H01J37/32009 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/76224

    Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

    Abstract translation: 根据本发明，提供了一种通过提供沉积方法来填充在衬底上制造特征期间产生的一个或多个间隙的方法，所述沉积方法包括： 以第一剂量将第一反应物引入基底，由此通过第一反应物形成不超过约一个单层; 用第二剂量将第二反应物引入基底。 第一反应物以亚饱和第一剂量引入，仅到达一个或多个间隙的表面的顶部区域，第二反应物以饱和第二剂量引入，到达一个或多个间隙的表面的底部区域。 第三反应物可以以第三剂量提供给反应室中的基底，第三反应物与第一和第二反应物中的至少一种反应。

    SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS
    8.
    发明申请
    SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS 审中-公开

    公开(公告)号：WO2018109553A3

    公开(公告)日：2018-06-21

    申请号：PCT/IB2017/001652

    申请日：2017-12-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： RAAIJMAKERS, Ivo, Johannes ,  MAES, Jan, Willem ,  KNAEPEN, Werner ,  KACHEL, Krzysztof, Kamil

    IPC: C23C16/04 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02

    Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

    METHOD AND APPARATUS FOR FILLING A GAP
    9.
    发明申请
    METHOD AND APPARATUS FOR FILLING A GAP 审中-公开
    用于填充间隙的方法和设备

    公开(公告)号：WO2018020316A1

    公开(公告)日：2018-02-01

    申请号：PCT/IB2017/001015

    申请日：2017-07-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： PORE, Viljami ,  KNAEPEN, Werner ,  JONGBLOED, Bert ,  PIERREUX, Dieter ,  VAN DER STAR, Gido ,  SUZUKI, Toshiya

    IPC: H01L21/316 ,  C23C16/455

    Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

    Abstract translation: 提供了一种通过在反应室中提供基材并以第一剂量将第一反应物引入基材从而形成不超过约一个单层的方法来填充一个或多个间隙， 第一区域上的第一反应物; 以第二剂量将第二反应物引入基底，由此通过第二反应物在表面的第二区域上形成不超过约一个单层，其中第一和第二区域在重叠区域中重叠，其中第一和第二反应物 反应并留下第一和第二区域不重叠的初始未反应区域; 以及以第三剂量将第三反应物引入基底，第三反应物与残留在初始未反应区域上的第一或第二反应物反应。

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