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    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE
    2.
    发明申请
    METHOD OF FORMING A DIRECTED SELF-ASSEMBLED LAYER ON A SUBSTRATE 审中-公开
    在衬底上形成直接自组装层的方法

    公开(公告)号：WO2017184357A1

    公开(公告)日：2017-10-26

    申请号：PCT/US2017/026518

    申请日：2017-04-07

    Applicant: ASM IP HOLDING B.V. ,  IMEC VZW ,  ASM AMERICA, INC.

    Inventor： KNAEPEN, Werner ,  MAES, Jan, Willem ,  STOKHOF, Maarten ,  GRONHEID, Roel ,  SRIRAMAN, Hari, Pathangi

    IPC: H01L21/027 ,  H01L21/768

    Abstract: A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10 - 2000 Pa.

    Abstract translation: 通过以下步骤在衬底上形成定向自组装（DSA）层的方法：提供衬底; 在衬底上施加包含自组装材料的层; 以及通过在衬底周围提供受控的温度和气体环境来退火该层的自组装材料以形成定向的自组装层。 受控的气体环境包含分子，该分子包含分压在10-2000Pa之间的氧元素

    METHOD FOR MANUFACTURING PILLAR OR HOLE STRUCTURES IN A LAYER OF A SEMICONDUCTOR DEVICE, AND ASSOCIATED SEMICONDUCTOR STRUCTURE
    5.
    发明申请
    METHOD FOR MANUFACTURING PILLAR OR HOLE STRUCTURES IN A LAYER OF A SEMICONDUCTOR DEVICE, AND ASSOCIATED SEMICONDUCTOR STRUCTURE 审中-公开
    在半导体器件层中制造柱或结构的方法及相关半导体结构

    公开(公告)号：WO2016083064A1

    公开(公告)日：2016-06-02

    申请号：PCT/EP2015/075004

    申请日：2015-10-28

    Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN, KU LEUVEN R&D

    Inventor： SINGH, Arjun ,  GRONHEID, Roel

    IPC: H01L21/027 ,  H01L21/033

    CPC classification number: H01L21/31058 ,  G03F7/0002 ,  G03F7/427 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L23/544 ,  H01L27/1085 ,  H01L29/1037 ,  H01L29/66666 ,  H01L2223/54426

    Abstract: Method for manufacturing pillar structures in a layer of a semiconductor device, the pillar structures being arranged at positions forming a hexagonal matrix configuration, the method comprising: - embedding alignment pillar structures in a backfill brush polymer layer, the backfill brush polymer layer having a thickness which is about equal to the height of the alignment pillar structures, the alignment pillar structures being at positions corresponding to a subset of the positions of the hexagonal matrix configuration; - providing a BCP layer on a substantially planar surface defined by an upper surface of the alignment pillar structures and the backfill brush polymer layer; - inducing polymer micro phase separation of the BCP polymer layer into pillar structures of a first component of the BCP polymer layer embedded in a second component of the BCP polymer layer, the pillar structures of the first component being arranged at positions forming the hexagonal matrix configuration; and such that on each alignment pillar structure a pillar structure of a first component of the BCP polymer layer is formed; and associated semiconductor structure.

    Abstract translation: 在半导体器件层中制造柱结构的方法，所述柱结构布置在形成六边形矩阵构型的位置，所述方法包括：将取向柱结构嵌入回填刷聚合物层中，所述回填刷聚合物层具有厚度 其大约等于对准柱结构的高度，对准柱结构处于与六边形矩阵构型的位置的子集相对应的位置; - 在由所述对准柱结构和所述回填刷聚合物层的上表面限定的基本上平坦的表面上提供BCP层; - 将所述BCP聚合物层的聚合物微相分离引入嵌入在所述BCP聚合物层的第二组分中的BCP聚合物层的第一组分的柱结构中，所述第一组分的柱结构被布置在形成所述六边形矩阵构型的位置 ; 并且在每个取向柱结构上形成BCP聚合物层的第一成分的柱结构; 和相关的半导体结构。

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