Abstract:
A method of characterizing a deformation of a plurality of substrates is described. The method comprising the steps of: - measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; - determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; - grouping the positional deviations into data sets; - determining an average data set; - subtracting the average data set from the data sets to obtain a plurality of variable data sets; - performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; - subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
Abstract:
Disclosed is a method for modeling measurement data over a substrate area and associated apparatus. The method comprises obtaining measurement data relating to a first layout; modeling a second model based on said first layout; evaluating the second model on a second layout, the second layout being more dense than said first layout; and fitting a first model to this second model according to the second layout.
Abstract:
A measurement apparatus (10) and method for determining a substrate grid describing a deformation of a substrate (12) prior to exposure of the substrate (12) in a lithographic apparatus (LA) configured to fabricate one or more features on the substrate (12). Position data for a plurality of first features and/or a plurality of second features on the substrate (12) is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus LA for controlling at least part of an exposure process to fabricate one or more features on the substrate (12).
Abstract:
A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
Abstract:
A method of determining the position of an alignment mark (29) on a substrate, the alignment mark (29) comprising a first segment (29a) and a second segment (29b), the method comprising illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal comprises a first component received during illumination of the first segment only (beam profile 35 is on the left), a second component received during illumination of the second segment only (beam profile 35 is on the right), and a third component received during simultaneous illumination of both segments (when the beam passes the boundary between 29a and 29b). The positions of the segments (29a, 29b) are determined using the first component, the second component and the third component of the alignment signal.
Abstract:
A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.
Abstract:
Disclosed is a method of, and associated apparatuses for, performing a position measurement on an alignment mark comprising at least a first periodic structure having a direction of periodicity along a first direction. The method comprises obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting step uses one of a modulation fit or a background envelope periodic fit.
Abstract:
Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.
Abstract:
A method for determining substrate deformation has the steps: (a) obtaining (402) first measurement data (X i ) associated with mark position, from measurements of a plurality of substrates; (b) obtaining (404) second measurement data (X i and/or Y) associated with mark position, from measurements of the plurality of substrates; (c) determining (408) a mapping (M i,j ) between the first measurement data and the second measurement data; and (d) decomposing (410) the mapping, by calculating an eigenvalue decomposition for the mapping matrix (M ij ), to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.
Abstract:
In a method of controlling a lithographic apparatus, historical performance measurements (512) are used to calculate a process model (PM) relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured (502) and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements (522) obtained at the time of processing the prior substrates are used (530) with the historical performance measurements to calculate a model mapping (M). The model mapping is applied (520) to modify the substrate model. The lithographic apparatus is controlled (508) using the process model and the modified substrate model (SM') together (PSM). Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.