ALIGNMENT METHOD
    5.
    发明申请
    ALIGNMENT METHOD 审中-公开
    对齐方法

    公开(公告)号:WO2018033499A1

    公开(公告)日:2018-02-22

    申请号:PCT/EP2017/070537

    申请日:2017-08-14

    Abstract: A method of determining the position of an alignment mark (29) on a substrate, the alignment mark (29) comprising a first segment (29a) and a second segment (29b), the method comprising illuminating the alignment mark with radiation, detecting radiation diffracted by the alignment mark and generating a resulting alignment signal. The alignment signal comprises a first component received during illumination of the first segment only (beam profile 35 is on the left), a second component received during illumination of the second segment only (beam profile 35 is on the right), and a third component received during simultaneous illumination of both segments (when the beam passes the boundary between 29a and 29b). The positions of the segments (29a, 29b) are determined using the first component, the second component and the third component of the alignment signal.

    Abstract translation: 一种用于确定衬底上的对准标记(29)的位置的方法,所述对准标记(29)包括第一段(29a)和第二段(29b),所述方法包括照射 利用辐射对准标记,检测由对准标记衍射的辐射并产生最终的对准信号。 对准信号包括仅在照射第一段期间接收的第一分量(光束轮廓35在左侧),在仅照射第二段(光束轮廓35在右侧)期间接收的第二分量,以及第三分量 在同时照射两段时(在光束通过29a和29b之间的边界时)接收。 使用对准信号的第一分量,第二分量和第三分量来确定段(29a,29b)的位置。

    METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE IN A LITHOGRAPHIC APPARATUS
    6.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING A SUBSTRATE IN A LITHOGRAPHIC APPARATUS 审中-公开
    用于处理光刻设备中的基板的方法和设备

    公开(公告)号:WO2017092936A1

    公开(公告)日:2017-06-08

    申请号:PCT/EP2016/075913

    申请日:2016-10-27

    CPC classification number: G03F9/7011

    Abstract: A lithographic apparatus has a substrate table on which a substrate is positioned, and an alignment sensor used to measure the alignment of the substrate. In an exemplary processing method, the alignment sensor is used to perform one or more edge measurements in a first step. In a second step, one or more edge measurements are performed on the notch of the substrate. The edge measurements are then used to align the substrate in the lithographic apparatus. In a particular example, the substrate is arranged relative to the alignment sensor such that a portion of the edge surface is positioned at the focal length of the lens. When the alignment sensor detects radiation scattered by the edge surface at the focal length of the lens, the presence of the edge of the substrate is detected.

    Abstract translation: 光刻设备具有其上放置有基板的基板台和用于测量基板的对准的对准传感器。 在示例性处理方法中,对准传感器用于在第一步骤中执行一个或多个边缘测量。 在第二步中,在基板的凹槽上执行一个或多个边缘测量。 然后使用边缘测量值来对准光刻设备中的衬底。 在特定示例中,衬底相对于对准传感器布置,使得边缘表面的一部分位于透镜的焦距处。 当对准传感器检测到在透镜的焦距处由边缘表面散射的辐射时,检测到衬底边缘的存在。

    ALIGNMENT METHOD AND ASSOCIATED ALIGNMENT AND LITHOGRAPHIC APPARATUSES

    公开(公告)号:WO2021115735A1

    公开(公告)日:2021-06-17

    申请号:PCT/EP2020/082364

    申请日:2020-11-17

    Abstract: Disclosed is a substrate, associated patterning device and a method for measuring a position of the substrate. The method comprises performing an alignment scan of an alignment mark to obtain simultaneously: a first measurement signal detected in a first measurement channel and a second measurement signal detected in a second measurement channel. The first and second measurement signals are processed by subtracting a first direction component of the first measurement signal from a first direction component of the second measurement signal to obtain a first processed signal, the first direction components relating to said first direction. The position of an alignment mark is determined with respect to the first direction from the first processed signal.

    METHOD FOR DETERMINING DEFORMATION
    9.
    发明申请

    公开(公告)号:WO2019001871A1

    公开(公告)日:2019-01-03

    申请号:PCT/EP2018/063933

    申请日:2018-05-28

    Abstract: A method for determining substrate deformation has the steps: (a) obtaining (402) first measurement data (X i ) associated with mark position, from measurements of a plurality of substrates; (b) obtaining (404) second measurement data (X i and/or Y) associated with mark position, from measurements of the plurality of substrates; (c) determining (408) a mapping (M i,j ) between the first measurement data and the second measurement data; and (d) decomposing (410) the mapping, by calculating an eigenvalue decomposition for the mapping matrix (M ij ), to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.

    METHOD OF CONTROLLING A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS
    10.
    发明申请
    METHOD OF CONTROLLING A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD, CONTROL SYSTEM FOR A LITHOGRAPHIC APPARATUS AND LITHOGRAPHIC APPARATUS 审中-公开
    控制平面设备和设备制造方法的方法,用于平面设备和平面设备的控制系统

    公开(公告)号:WO2017060054A1

    公开(公告)日:2017-04-13

    申请号:PCT/EP2016/071831

    申请日:2016-09-15

    CPC classification number: G03F7/70633 G03F7/705 G03F9/7003

    Abstract: In a method of controlling a lithographic apparatus, historical performance measurements (512) are used to calculate a process model (PM) relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured (502) and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements (522) obtained at the time of processing the prior substrates are used (530) with the historical performance measurements to calculate a model mapping (M). The model mapping is applied (520) to modify the substrate model. The lithographic apparatus is controlled (508) using the process model and the modified substrate model (SM') together (PSM). Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.

    Abstract translation: 在控制光刻设备的方法中,使用历史性能测量(512)来计算与光刻工艺相关的工艺模型(PM)。 测量设置在当前基板上的多个对准标记的当前位置(502)并用于计算与当前基板相关的基板模型。 另外,使用处理现有基板时获得的历史位置测量(522)(530)与历史性能测量值来计算模型映射(M)。 应用模型映射(520)来修改衬底模型。 使用过程模型和修改的底物模型(SM')在一起(PSM)对光刻设备进行控制(508)。 通过避免过程模型和衬底模型的相关组件的过度校正或欠校正来改善覆盖性能。 模型映射可以是子空间映射,并且在使用模型映射之前可以减小模型映射的维度。

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