公开(公告)号：WO2016102157A1

公开(公告)日：2016-06-30

申请号：PCT/EP2015/078205

申请日：2015-12-01

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander, Frederik ,  YILDIRIM, Oktay ,  RISPENS, Gijsbert ,  POLYAKOV, Alexey, Olegovich

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039 ,  G03F7/40 ,  G03F7/16

CPC classification number: G03F7/0045 ,  G03F7/0002 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/30

Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX 3 , A 2 BX 4 , or ABX 4 , wherein A is a compound containing an NH 3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen- mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

Abstract translation: 公开了一种抗蚀剂组合物，其包含具有选自ABX3，A2BX4或ABX4的化学式的结构的钙钛矿材料，其中A是含有NH 3基团的化合物，B是金属，X是卤化物组分。 钙钛矿材料可以包含一种或多种以下组分：卤素混合的钙钛矿材料; 金属混合钙钛矿材料和有机配体混合的perovsikte材料。

公开(公告)号：WO2021099051A1

公开(公告)日：2021-05-27

申请号：PCT/EP2020/079531

申请日：2020-10-20

Applicant: ASML NETHERLANDS B.V.

Inventor： LIN, Qinghuang ,  MAAS, Ruben, Cornelis ,  WUISTER, Sander, Frederik

IPC: G03F7/004 ,  G03F7/039

Abstract: There is provided a polymer for use as a resist in the fabrication of integrated circuits. There is also provided a non-chemically amplified resist composition comprising a polymer having at least one scission portion comprising a light cleavable chemical linkage configured to preferentially break upon exposure of the resist composition to electromagnetic radiation. Also provided is the use of such resist compositions or polymers as well as a lithographic method incorporating such compositions or polymers.

公开(公告)号：WO2019122250A1

公开(公告)日：2019-06-27

申请号：PCT/EP2018/086415

申请日：2018-12-20

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  RIO, David, Marie ,  WUISTER, Sander, Frederik

IPC: G03F7/20

Abstract: Described herein is a method for calibrating a resist model. The method includes the steps of: generating a modeled resist contour of a resist structure based on a simulated aerial image of the resist structure and parameters of the resist model, and predicting a metrology contour of the resist structure from the modeled resist contour based on information of an actual resist structure obtained by a metrology device. The method includes adjusting the parameters of the resist model based on a comparison of the predicted metrology contour and an actual metrology contour of the actual resist structure obtained by the metrology device.

公开(公告)号：WO2019115431A1

公开(公告)日：2019-06-20

申请号：PCT/EP2018/084109

申请日：2018-12-10

Applicant: ASML NETHERLANDS B.V.

Inventor： KOOIMAN, Marleen ,  WUISTER, Sander, Frederik

IPC: G03F7/20 ,  G01N21/956 ,  H01L21/66

Abstract: Disclosed is a method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method comprises determining a placement metric for each feature, the placement metric comprising a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may comprise a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric comprising a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

公开(公告)号：WO2015180966A2

公开(公告)日：2015-12-03

申请号：PCT/EP2015/060620

申请日：2015-05-13

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander, Frederik ,  JEUNINK, Andre, Bernardus ,  PEETERS, Emiel

IPC: G03F7/00

CPC classification number: H01L21/76816 ,  B81C1/00031 ,  B81C1/00396 ,  B81C2201/0149 ,  C09K13/00 ,  C30B1/04 ,  C30B29/58 ,  G03F7/0002 ,  G03F7/0041 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/70375 ,  H01L21/0271 ,  H01L21/3083 ,  H01L21/76829

Abstract: A method of forming at least one lithography feature, the method comprising: providing at least one lithography recess on a substrate, the or each lithography recess comprising side-walls and a base, with the side-walls having a width therebetween; providing a self-assemblable block copolymer having first and second blocks in the or each lithography recess; causing the self-assemblable block copolymer to self-assemble into an ordered layer within the or each lithography recess, the ordered layer comprising at least a first domain of first blocks and a second domain of second blocks; causing the self-assemblable block copolymer to cross-link in a directional manner; and selectively removing the first domain to form lithography features comprised of the second domain within the or each lithography recess.

Abstract translation: 一种形成至少一个光刻特征的方法，所述方法包括：在基底上提供至少一个光刻凹槽，所述或每个光刻凹槽包括侧壁和底座，其中所述侧壁之间具有宽度; 提供在所述或每个光刻凹槽中具有第一和第二块的自组装嵌段共聚物; 使得所述可自组装嵌段共聚物自组装成所述或每个光刻凹槽内的有序层，所述有序层包含至少第一区域的第一区域和第二区域的第二区域; 导致自组装嵌段共聚物以定向方式交联; 并且选择性地移除第一区域以形成由该光刻凹槽或每个光刻凹槽内的第二区域组成的光刻特征。

公开(公告)号：WO2019110403A1

公开(公告)日：2019-06-13

申请号：PCT/EP2018/082949

申请日：2018-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： BATISTAKIS, Chrysostomos ,  MIDDLEBROOKS, Scott, Anderson ,  WUISTER, Sander, Frederik

IPC: G03F7/20

Abstract: A method, involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist; performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for an input pattern to the resist deformation model; and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

公开(公告)号：WO2017198418A1

公开(公告)日：2017-11-23

申请号：PCT/EP2017/059475

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： VOORTHUIJZEN, Willem-Pieter ,  VAN LARE, Marie-Claire ,  WUISTER, Sander, Frederik

IPC: G03F7/004

CPC classification number: G03F7/0044 ,  G03F7/0043 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/32 ,  H01L21/0274

Abstract: A resist composition comprising a) metal-containing nanoparticles and/or nanoclusters, and b) ligands and or organic linkers, wherein one or both of a) or b) are multivalent. A resist composition wherein: i) the resist composition is a negative resist and the nanoparticles and/or nanoclusters cluster upon crosslinking of the ligands and/or organic linkers following exposure to electromagnetic radiation or an electron beam; or ii) the resist composition is a negative resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam allowing the nanoparticles and/or nanoclusters to cluster together; or the resist composition is a positive resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam.

Abstract translation: 抗蚀剂组合物，其包含a）含金属纳米颗粒和/或纳米团簇，和b）配体和/或有机连接剂，其中a）或b）中的一者或两者是多价的。 一种抗蚀剂组合物，其中：i）抗蚀剂组合物是负性抗蚀剂，并且在暴露于电磁辐射或电子束之后，配体和/或有机连接体交联后，纳米颗粒和/或纳米簇聚集; 或ii）所述抗蚀剂组合物是负性抗蚀剂，并且所述配体和/或有机连接体交联，并且在暴露于允许所述纳米颗粒和/或纳米团簇聚集在一起的电磁辐射或电子束时所述交联键断裂; 或抗蚀剂组合物是正性抗蚀剂，并且配体和/或有机连接体交联，并且在暴露于电磁辐射或电子束时交联键断裂。

公开(公告)号：WO2015067433A1

公开(公告)日：2015-05-14

申请号：PCT/EP2014/071814

申请日：2014-10-10

Applicant: ASML NETHERLANDS B.V.

Inventor： WUISTER, Sander, Frederik ,  AMBESI, Davide

IPC: G03F7/00

CPC classification number: G03F1/70 ,  G03F7/0002 ,  G06F17/5068 ,  G06F2217/12

Abstract: A method of designing a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the feature guiding template including at least two portions joined by a bottleneck, the method including determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template comprising a value of a first width of at least one of the portions, a value of a second width of the bottleneck, or a value based on both the first width and the second width.

Abstract translation: 一种设计特征引导模板的方法，用于引导嵌段共聚物的自组装以在用于光刻的设计布局中形成至少两个特征，所述特征引导模板包括由瓶颈连接的至少两个部分，所述方法包括确定 所述特征引导模板至少基于所述特征引导模板的几何形状的函数，所述特征指导模板包括所述部分中的至少一个部分的第一宽度的值，所述瓶颈的第二宽度的值或基于所述第一 宽度和第二宽度。

公开(公告)号：WO2015032588A1

公开(公告)日：2015-03-12

申请号：PCT/EP2014/067086

申请日：2014-08-08

Applicant: ASML NETHERLANDS B.V.

Inventor： LAENENS, Bart ,  WUISTER, Sander, Frederik

IPC: G03F7/00

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F7/0002 ,  G06F17/5009

Abstract: A method of determining a characteristic of a guiding template for guiding self-assembly of block copolymer to form an entirety of a design layout, or a portion thereof, including a plurality of design features, each design feature including one or more elemental features, the method including selecting a characteristic of a guiding template for each of the one or more elemental features of the plurality of design features from a database or a computer readable non-transitory medium, the database or the computer readable non-transitory medium storing a characteristic of a guiding template for each of the one or more elemental features, and determining the characteristic of the guiding template to form the entirety of the design layout, or the portion thereof, by combining the selected characteristic of the guiding template for the one or more elemental features for each of the plurality of design features.

Abstract translation: 一种确定引导模板的特征的方法，用于引导嵌段共聚物的自组装以形成包括多个设计特征的整个设计布局或其一部分，每个设计特征包括一个或多个元素特征， 方法，包括从数据库或计算机可读的非暂时介质中选择所述多个设计特征中的所述一个或多个元素特征中的每一个的指导模板的特征，所述数据库或所述计算机可读非暂时介质存储 用于所述一个或多个元素特征中的每一个的引导模板，以及通过组合用于所述一个或多个元素的所述引导模板的所选特征来确定所述引导模板的特征以形成所述设计布局的整体或其部分 用于多个设计特征中的每一个的特征。