公开(公告)号：WO2017000503A1

公开(公告)日：2017-01-05

申请号：PCT/CN2015/096946

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L29/26 ,  H01L21/02

CPC classification number: H01L27/1222 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869

Abstract: A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

Abstract translation: 提供金属氧化物半导体薄膜，薄膜晶体管（TFT），制造金属氧化物半导体薄膜和TFT的方法以及显示装置。 在一些实施例中，金属氧化物半导体包括：第一金属元件，第二金属元件和第三金属元件，其中：第一金属元素是钪，钇，铝，铟和稀土元素中的至少一种; 第二金属元素是钙，锶和钡中的至少一种; 第三金属元素是钛和锡中的至少一种。

公开(公告)号：WO2017121243A1

公开(公告)日：2017-07-20

申请号：PCT/CN2016/112952

申请日：2016-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  YUAN, Guangcai ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/78603 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: An active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof are provided. A method for fabricating an active layer (4) in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer (4). The thin film is made of a material selected to provide the active layer (4) with a carrier concentration of at least approximately 1x10 17 cm -3 and a carrier mobility of at least approximately 20 cm 2 /Vs.

Abstract translation: 提供有源层，薄膜晶体管，阵列基板和显示装置及其制造方法。 通过直流（DC）溅射工艺形成薄膜来提供用于在薄膜晶体管中制造有源层（4）的方法; 和蚀刻该薄膜以形成有源层（4）。 该薄膜由选择用于提供载流子浓度至少约为1×10 17 cm -3和载流子迁移率为的有源层（4）的材料制成， 至少约20cm 2 / Vs。

公开(公告)号：WO2018076960A1

公开(公告)日：2018-05-03

申请号：PCT/CN2017/102106

申请日：2017-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Abstract translation: 用于制造半导体薄膜的方法包括在衬底上顺序形成第一半导体层，中间层和第二半导体层。 第一半导体层和第二半导体层可以是n型半导体层和p型半导体层中的一个和另一个。 通过溶液工艺形成第一半导体层，中间层或第二半导体层中的至少一个。 该n型半导体层可以包括氧化铟。 中间层可以包括自组装材料。 p型半导体层可以包括p型有机半导体材料，并且可以是并五苯。 在此基础上，还公开了由其制造的半导体薄膜，半导体薄膜晶体管和显示装置。

公开(公告)号：WO2017124672A1

公开(公告)日：2017-07-27

申请号：PCT/CN2016/082904

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  YUAN, Guangcai ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869

Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO 2 . This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO 2 is about 1％-95％. A semiconductor layer comprising Sn-doped ZrO 2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO 2 , and (ii) annealing the semiconductor layer.

Abstract translation: 本发明提供了一种薄膜晶体管（TFT），其包括Sn掺杂的ZrO 2。 该氧化物半导体材料可以用于TFT的半导体层中，并且在ZrO 2中掺杂的Sn的质量百分比为大约1％-95％。 包含Sn掺杂的ZrO 2的半导体层在退火后表现出较高的耐酸性。 本发明还提供了一种制造TFT的方法，其包括：（i）形成半导体层，其中所述半导体层包含Sn掺杂的ZrO 2，和（ii）对所述半导体层进行退火。 / p>

公开(公告)号：WO2018082327A1

公开(公告)日：2018-05-11

申请号：PCT/CN2017/091131

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  XU, Xiaoguang ,  LAN, Linfeng ,  WANG, Lei ,  PENG, Junbiao

IPC: H01L21/28

Abstract: A method of fabricating a plurality of electrodes is provided. The method includes forming a hydrophobic pattern (101) containing a hydrophobic material on a base substrate (100), the hydrophobic pattern (101) has a first ridge (1011a) on a first edge (e1) of the hydrophobic pattern (101), the hydrophobic pattern (101) has a thickness at the first ridge (1011a) greater than that in a region outside a region corresponding to the first ridge (1011a); removing a portion of the hydrophobic pattern (101) outside the region corresponding to the first ridge (1011a); and forming a first electrode (103) on a first side of the first ridge (1011a) and a second electrode (104) on a second side of the first ridge (1011a).

Abstract translation: 提供了一种制造多个电极的方法。 该方法包括在基底基板（100）上形成包含疏水材料的疏水图案（101），疏水图案（101）在疏水图案（101）的第一边缘（e1）上具有第一脊部（1011a） 所述疏水图案（101）在所述第一凸脊（1011a）处的厚度大于在对应于所述第一凸脊（1011a）的区域外侧的区域中的厚度; 在对应于所述第一脊（1011a）的区域外部去除所述疏水图案（101）的一部分; 以及在第一脊（1011a）的第一侧上形成第一电极（103），并在第一脊（1011a）的第二侧上形成第二电极（104）。

公开(公告)号：WO2017004939A1

公开(公告)日：2017-01-12

申请号：PCT/CN2015/096953

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L21/34 ,  H01L21/44 ,  H01L29/786 ,  H01L29/423 ,  H01L21/77 ,  H01L27/12

CPC classification number: H01L27/1214 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate (01); performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer (15) and a non-oxidized conductive sub-layer(10); and forming an active layer(19), a source electrode (20) and a drain electrode (21) over the oxidized insulating sub-layer (15).

Abstract translation: 提供TFT，相关TFT阵列基板，其制造方法，显示面板和包含该TFT阵列基板的显示装置。 提供一种制造TFT的方法，所述方法包括：在基底（01）上形成初始导电层; 进行氧化处理以部分地氧化初始导电层以形成氧化的绝缘子层（15）和非氧化的导电子层（10）; 以及在所述氧化绝缘子层（15）上形成有源层（19），源电极（20）和漏电极（21）。

公开(公告)号：WO2019062273A1

公开(公告)日：2019-04-04

申请号：PCT/CN2018/095260

申请日：2018-07-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： YANG, Shengji ,  DONG, Xue ,  CHEN, Xiaochuan ,  WANG, Hui ,  WANG, Yanming ,  LU, Pengcheng ,  LIU, Wei ,  WANG, Zhi ,  WANG, Lei ,  WANG, Huijuan

IPC: G06F3/041

CPC classification number: G06F3/0443 ,  G06F3/0416 ,  G06F3/04164 ,  G06F2203/04103

Abstract: A display panel includes a touch electrode layer (4). The touch electrode layer (4) may include a plurality of touch electrodes (41). Each of the plurality of the touch electronics (41) may be insulated from one another. A shape of each of the plurality of the touch electronics (41) may be configured to determine a distance of a touch position on one of the plurality of the touch electrodes (41) to a geometric center of the touch electrode layer (4) based on a change of a capacitance of each of the plurality of the touch electrodes (41).

公开(公告)号：WO2017031965A1

公开(公告)日：2017-03-02

申请号：PCT/CN2016/074218

申请日：2016-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： LI, Changfeng ,  DONG, Xue ,  WANG, Haisheng ,  CHEN, Xiaochuan ,  WANG, Lei ,  ZHAO, Weijie ,  YANG, Shengji ,  DING, Xiaoliang ,  LIU, Wei ,  LIU, Yingming

IPC: G06K9/00

CPC classification number: G06K9/0002 ,  G06F3/044 ,  G06F2203/04103 ,  G06K9/0008

Abstract: A mutual-capacitance touch sensing pattern recognition device, a related fabricating method, a related display panel, and a related display apparatus are disclosed. The mutual-capacitance touch sensing pattern recognition device can comprise a plurality of sensing electrode lines and a plurality of driving electrode lines, wherein at least one set of the plurality of sensing electrode lines and the plurality of driving electrode lines have curved portions

Abstract translation: 公开了互电容式触摸感测图案识别装置，相关制造方法，相关显示面板和相关显示装置。 互电容式触摸感测模式识别装置可以包括多个感测电极线和多个驱动电极线，其中，多个感测电极线和多个驱动电极线中的至少一组具有弯曲部分

公开(公告)号：WO2017028453A1

公开(公告)日：2017-02-23

申请号：PCT/CN2015/099128

申请日：2015-12-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： YANG, Shengji ,  DONG, Xue ,  XUE, Hailin ,  WANG, Haisheng ,  CHEN, Xiaochuan ,  LIU, Yingming ,  ZHAO, Weijie ,  XU, Rui ,  WANG, Lei ,  LI, Changfeng ,  LIU, Hongjuan

IPC: G06F3/044 ,  G02F1/1333

CPC classification number: G06F3/0416 ,  G02F1/13338 ,  G02F2001/134372 ,  G06F1/3262 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04112

Abstract: A touch display panel. The touch display panel includes a first substrate (11); a plurality of data lines (13); and a plurality of gate lines (14). The touch display panel also includes a plurality of subpixel regions (15) arranged in an array defined by the plurality of data lines (13) and the plurality of gate lines (14) on the first substrate (11), each subpixel region (15) including a common electrode pattern (16); a plurality of touch-driving electrodes (17), each formed by electrically connected common electrode patterns (16) corresponding to at least one row of subpixel regions (15); and a plurality of touch-sensing electrodes (18). The plurality of touch-driving electrodes (17) and the touch-sensing electrodes (18) are for detecting a touch motion on the touch display panel.

Abstract translation: 触摸显示面板。 触摸显示面板包括第一基板（11）; 多个数据线（13）; 和多条栅极线（14）。 触摸显示面板还包括以由多个数据线（13）和第一基板（11）上的多个栅极线（14）限定的阵列排列的多个子像素区域（15），每个子像素区域（15） ）包括公共电极图案（16）; 多个触摸驱动电极（17），每个触摸驱动电极（17）由对应于至少一排子像素区域（15）的电连接的公共电极图案（16）形成; 和多个触摸感测电极（18）。 多个触摸驱动电极（17）和触摸感测电极（18）用于检测触摸显示面板上的触摸动作。

公开(公告)号：WO2020093354A1

公开(公告)日：2020-05-14

申请号：PCT/CN2018/114756

申请日：2018-11-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： WANG, Pinfan ,  WANG, Lei

IPC: H01L27/32

Abstract: A stretchable display panel has a plurality of first regions (I) and a plurality of second regions (II) alternately arranged. The stretchable display panel includes a plurality of first light emitting elements (E1) and a plurality of first driving circuits (T1) for driving light emission of the plurality of first light emitting elements(E1); and a plurality of second light emitting elements (E2) and a plurality of second driving circuits (T2) for driving light emission of the plurality of second light emitting elements(E1). The plurality of first light emitting elements(E1), the plurality of first driving circuits(T1), and the plurality of second driving circuits(T2) are limited in the plurality of first regions (I). The plurality of second light emitting elements (E2) are limited in the plurality of second regions (II). The stretchable display panel in the plurality of first regions(I) have a Young's modulus greater than a Young's modulus in the plurality of second regions (II) of the stretchable display panel.