公开(公告)号：WO2017000503A1

公开(公告)日：2017-01-05

申请号：PCT/CN2015/096946

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L29/26 ,  H01L21/02

CPC classification number: H01L27/1222 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869

Abstract: A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

Abstract translation: 提供金属氧化物半导体薄膜，薄膜晶体管（TFT），制造金属氧化物半导体薄膜和TFT的方法以及显示装置。 在一些实施例中，金属氧化物半导体包括：第一金属元件，第二金属元件和第三金属元件，其中：第一金属元素是钪，钇，铝，铟和稀土元素中的至少一种; 第二金属元素是钙，锶和钡中的至少一种; 第三金属元素是钛和锡中的至少一种。

公开(公告)号：WO2018082327A1

公开(公告)日：2018-05-11

申请号：PCT/CN2017/091131

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  XU, Xiaoguang ,  LAN, Linfeng ,  WANG, Lei ,  PENG, Junbiao

IPC: H01L21/28

Abstract: A method of fabricating a plurality of electrodes is provided. The method includes forming a hydrophobic pattern (101) containing a hydrophobic material on a base substrate (100), the hydrophobic pattern (101) has a first ridge (1011a) on a first edge (e1) of the hydrophobic pattern (101), the hydrophobic pattern (101) has a thickness at the first ridge (1011a) greater than that in a region outside a region corresponding to the first ridge (1011a); removing a portion of the hydrophobic pattern (101) outside the region corresponding to the first ridge (1011a); and forming a first electrode (103) on a first side of the first ridge (1011a) and a second electrode (104) on a second side of the first ridge (1011a).

Abstract translation: 提供了一种制造多个电极的方法。 该方法包括在基底基板（100）上形成包含疏水材料的疏水图案（101），疏水图案（101）在疏水图案（101）的第一边缘（e1）上具有第一脊部（1011a） 所述疏水图案（101）在所述第一凸脊（1011a）处的厚度大于在对应于所述第一凸脊（1011a）的区域外侧的区域中的厚度; 在对应于所述第一脊（1011a）的区域外部去除所述疏水图案（101）的一部分; 以及在第一脊（1011a）的第一侧上形成第一电极（103），并在第一脊（1011a）的第二侧上形成第二电极（104）。

公开(公告)号：WO2017004939A1

公开(公告)日：2017-01-12

申请号：PCT/CN2015/096953

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L21/34 ,  H01L21/44 ,  H01L29/786 ,  H01L29/423 ,  H01L21/77 ,  H01L27/12

CPC classification number: H01L27/1214 ,  H01L21/28008 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1292 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate (01); performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer (15) and a non-oxidized conductive sub-layer(10); and forming an active layer(19), a source electrode (20) and a drain electrode (21) over the oxidized insulating sub-layer (15).

Abstract translation: 提供TFT，相关TFT阵列基板，其制造方法，显示面板和包含该TFT阵列基板的显示装置。 提供一种制造TFT的方法，所述方法包括：在基底（01）上形成初始导电层; 进行氧化处理以部分地氧化初始导电层以形成氧化的绝缘子层（15）和非氧化的导电子层（10）; 以及在所述氧化绝缘子层（15）上形成有源层（19），源电极（20）和漏电极（21）。

公开(公告)号：WO2020125707A1

公开(公告)日：2020-06-25

申请号：PCT/CN2019/126511

申请日：2019-12-19

Applicant: TSINGHUA UNIVERSITY ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： LIN, Zhanglin ,  WANG, Tingting ,  ZHAO, Qing ,  WANG, Xu ,  ZHOU, Bihong ,  XING, Lei

IPC: C07K14/35 ,  C07K14/00 ,  C07K1/00 ,  C12N15/54 ,  C12N15/55 ,  C12N9/22 ,  C12N9/52 ,  C12N9/10 ,  C12N15/62 ,  C12N15/57 ,  C12P21/06

Abstract: The invention provides a MtuΔI-CM intein variant or a biologically active fragment there of, and a method for producing and purifying a molecule of interest using the same.

公开(公告)号：WO2018188072A1

公开(公告)日：2018-10-18

申请号：PCT/CN2017/080571

申请日：2017-04-14

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： QU, Shengguan ,  WANG, Bin ,  LI, Xiaoqiang ,  CAO, Xiaobing ,  LI, Gang ,  CHENG, Zhun ,  LI, Xiang-Long

IPC: C03C27/08

CPC classification number: C03C17/36 ,  C03C17/3649 ,  C03C17/3663

Abstract: A method of making a high volume fraction SiCp/Al composite-Titanium alloy-bismuthate glass metal plus dielectric multi-layer films optics Al-mirror, the method comprising: a step of preparing a novel mirror substrate, and a step of fabricating the mirror of film design. A high volume fraction SiCp/Al composite-Titanium alloy-bismuthate glass metal plus multi-layer films optics Al-mirror comprising, in sequence, at least: a high volume fraction SiCp/Al composite-Titanium alloy-bismuthate glass metal substrate, a transition layer, a reflection layer, a protection layer, and a transmission enhanced layer. The substrate is high volume fraction SiCp/Al composite-Titanium alloy-bismuthate glass metal substrate, the transition layer is a Cr film, the reflector layer is an Al film, the protective layer is SiO 2 and the transmission enhanced layer is Ta 2 O 5 . The high volume fraction SiCp/Al composite-Titanium alloy-bismuthate glass metal plus multi-layer films optics Al-mirror has outstanding optical features: the maximum reflectivity can reach up to 97% in a visible wavelength range of 450-720 nm, and lightweight and stability than traditional optical pure glass mirror.

公开(公告)号：WO2017121243A1

公开(公告)日：2017-07-20

申请号：PCT/CN2016/112952

申请日：2016-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  YUAN, Guangcai ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/78603 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: An active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof are provided. A method for fabricating an active layer (4) in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer (4). The thin film is made of a material selected to provide the active layer (4) with a carrier concentration of at least approximately 1x10 17 cm -3 and a carrier mobility of at least approximately 20 cm 2 /Vs.

Abstract translation: 提供有源层，薄膜晶体管，阵列基板和显示装置及其制造方法。 通过直流（DC）溅射工艺形成薄膜来提供用于在薄膜晶体管中制造有源层（4）的方法; 和蚀刻该薄膜以形成有源层（4）。 该薄膜由选择用于提供载流子浓度至少约为1×10 17 cm -3和载流子迁移率为的有源层（4）的材料制成， 至少约20cm 2 / Vs。

公开(公告)号：WO2019222092A1

公开(公告)日：2019-11-21

申请号：PCT/US2019/032000

申请日：2019-05-13

Applicant: UNIVERSITY OF CONNECTICUT ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： SUN, Luyi ,  LIU, Lan ,  CHEN, Song

IPC: C08G73/06 ,  A61L24/04 ,  C08G83/00 ,  C09J201/60

Abstract: Disclosed are adhesives comprising a first compound comprising three or more 1,2-dihydroxybenzene groups; and a second compound that is a functionalized polymer; wherein the first compound and second compound are in the form of a mixture, and wherein the adhesive has adhesive properties when wet. Additional embodiments to methods of preparing an adhesive, adhesives prepared by the method, and articles prepared from the adhesive are disclosed.

公开(公告)号：WO2019019138A1

公开(公告)日：2019-01-31

申请号：PCT/CN2017/094879

申请日：2017-07-28

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： QU, Shengguan ,  WANG, Bin ,  XIE, Mingxin ,  LI, Xiaoqiang ,  YANG, Chao ,  LI, Yuanyuan

IPC: G02B5/08 ,  G02B1/10 ,  B32B5/00

Abstract: A method of making a high volume fraction SiCp/Al composite-titanium alloy-PbO glass metal plus dielectric films optical Ag mirror is disclosed. The method comprises: a step of preparing a novel mirror substrate, and a step of fabricating the mirror of film design. A high volume fraction SiCp/Al composite-titanium alloy-PbO glass metal plus dielectric films optical Ag mirror comprises, in sequence, at least: a high volume fraction SiCp/Al composite-Titanium alloy-PbO glass metal substrate, a transition layer, a reflection layer, a protection layer, and a transmission enhanced layer. The transition layer is a Cr film, the reflector layer is an Ag film, the protective layer is SiO 2 and the transmission enhanced layer is Ta 2 O 5 . The high volume fraction SiCp/Al composite-titanium alloy-PbO glass metal plus dielectric films optical Ag mirror has high reflectivity (≥ 96％) in a visible wavelength range of 450-1600 nm. This material can be used in space telescopes and space surveillance cameras.

公开(公告)号：WO2018076960A1

公开(公告)日：2018-05-03

申请号：PCT/CN2017/102106

申请日：2017-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Abstract translation: 用于制造半导体薄膜的方法包括在衬底上顺序形成第一半导体层，中间层和第二半导体层。 第一半导体层和第二半导体层可以是n型半导体层和p型半导体层中的一个和另一个。 通过溶液工艺形成第一半导体层，中间层或第二半导体层中的至少一个。 该n型半导体层可以包括氧化铟。 中间层可以包括自组装材料。 p型半导体层可以包括p型有机半导体材料，并且可以是并五苯。 在此基础上，还公开了由其制造的半导体薄膜，半导体薄膜晶体管和显示装置。

公开(公告)号：WO2017197812A1

公开(公告)日：2017-11-23

申请号：PCT/CN2016/098632

申请日：2016-09-10

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： ZHANG, Lizhi ,  BAO, Aibing ,  CAI, Rongrong

IPC: B01D39/14

CPC classification number: B01D39/1623 ,  B01D2239/025 ,  B01D2239/0428 ,  B01D2239/0435 ,  B01D2239/10 ,  D01D5/0038 ,  D10B2321/041 ,  D10B2321/042 ,  D10B2321/10 ,  D10B2331/04 ,  D10B2331/14 ,  D10B2505/04

Abstract: Disclosed is a method for preparation and activation of a super hydrophobic electret nanofibrous filter material for cleaning PM2.5, comprising the steps as follows: (1)dissolving polymer powders and resin into a corresponding solvent so as to prepare a polymer solution, then stirring on a magnetic stirrer and standing for use; (2) in order to reinforce the electrostatic effect of the fiber, before preparing the polymer solution, adding in organic electret nanoparticles into the solvent, then oscillating with an ultrasonic oscillator; (3) in order to reinforce the super hydrophobic effect of the filter, spraying a low surface energy solution on the prepared nanofiber with a designed nozzle to carry out modification.

Abstract translation: 公开了一种用于清洗PM2.5的超疏水驻极体纳米纤维过滤材料的制备和活化方法，包括以下步骤：（1）将聚合物粉末和树脂溶解在相应的溶剂中，如 制备聚合物溶液，然后在磁力搅拌器上搅拌并静置使用; （2）为了增强纤维的静电效应，在制备聚合物溶液之前，将有机驻极体纳米颗粒加入溶剂中，然后用超声波振荡器振荡; （3）为了增强过滤器的超疏水效果，用设计好的喷嘴在制备的纳米纤维上喷洒低表面能溶液进行修饰。