公开(公告)号：WO2022023313A1

公开(公告)日：2022-02-03

申请号：PCT/EP2021/070949

申请日：2021-07-27

Applicant: CARL ZEISS SMT GMBH

Inventor： HILD, Kerstin ,  GRUNER, Toralf ,  LIPPERT, Johannes ,  STIEPAN, Hans Michael ,  POLLAK, Thilo ,  CAVACO, Jeffrey

IPC: G03F7/20 ,  G02B26/00 ,  H01L41/08

Abstract: The invention relates to a projection exposure apparatus (400, 100) comprising a projection objective (408, 107, 200), the projection objective (408, 107, 200) comprising an optical device (1), the optical device (1) comprising an optical element (2) having an optically effective surface (2a) and at least one electrostrictive actuator (3), which is deformable by a control voltage being applied, wherein the electrostrictive actuator (3) is functionally connected to the optical element (2) in order to influence the surface shape of the optically effective surface (2a). A control device (4) is provided in order to supply the electrostrictive actuator (3) with the control voltage, wherein a measuring device (5) is provided, which is configured, at least at times while the electrostrictive actuator (3) influences the optically effective surface (2a) of the optical element (2), to measure directly and/or to determine indirectly the temperature and/or a temperature change of the electrostrictive actuator (3) and/or the surroundings thereof in order to take account of a temperature-dependent influence during driving of the electrostrictive actuator (3) by the control device (4).

公开(公告)号：WO2021001311A1

公开(公告)日：2021-01-07

申请号：PCT/EP2020/068239

申请日：2020-06-29

Applicant: CARL ZEISS SMT GMBH

Inventor： MODESTE, Benjahman Julius ,  GRUNER, Toralf ,  GOLDE, Daniel ,  LOERING, Ulrich ,  ZWEERING, Ralf ,  XALTER, Stefan

IPC: G03F7/20 ,  G02B5/00 ,  G02B17/08

Abstract: A stop (300), in particular numerical aperture stop, obscuration stop or false-light stop, for a lithography apparatus (100A, 100B), comprising a light-transmissive aperture (302) and at least one stop element (306, 308), in which or at which the 5 aperture (302) is provided, wherein the stop element (306, 308) is opaque and fluid- permeable outside the aperture (302).

公开(公告)号：WO2020254147A1

公开(公告)日：2020-12-24

申请号：PCT/EP2020/065938

申请日：2020-06-09

Applicant: CARL ZEISS SMT GMBH ,  STIEPAN, Hans Michael ,  GRUNER, Toralf

Inventor： STIEPAN, Hans Michael ,  GRUNER, Toralf

IPC: G02B26/08 ,  G03F7/20

Abstract: The invention relates to a mirror, in particular for a microlithographic projection exposure apparatus. In accordance with one aspect, a mirror according to the invention has an optical effective surface (11, 31), a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is able to be applied by way of a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by way of a second electrode arrangement situated on the side of the pie- zoelectric layer facing the mirror substrate, wherein one of said electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement; and wherein said mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c,…; 37a, 37b, 37c,…).

公开(公告)号：WO2020064223A1

公开(公告)日：2020-04-02

申请号：PCT/EP2019/072210

申请日：2019-08-20

Applicant: CARL ZEISS SMT GMBH ,  WOLF, Alexander ,  GRUNER, Toralf ,  HARTJES, Joachim ,  ZOTT, Andy

Inventor： WOLF, Alexander ,  GRUNER, Toralf ,  HARTJES, Joachim ,  ZOTT, Andy

IPC: G03F7/20 ,  G01K11/00 ,  G02B7/18

Abstract: The invention relates to a method and an apparatus for determining the heating state of an optical element in a microlithographic optical system, wherein the method includes the following steps: producing, using a light source (303), a first partial beam (310) that is transmitted through the optical element (200, 300) and a second partial beam (320) that is not transmitted through the optical element, and determining the heating state of the optical element on the basis of a measurement of the time-of-flight difference between the first partial beam and the second partial beam, wherein the first partial beam (310) and the second partial beam (320) are reflected at different faces of the optical element (200, 300).

公开(公告)号：WO2020020506A1

公开(公告)日：2020-01-30

申请号：PCT/EP2019/062631

申请日：2019-05-16

Applicant: CARL ZEISS SMT GMBH ,  GRUNER, Toralf ,  HARTJES, Joachim ,  HAUF, Markus ,  BEURER, Gerhard

Inventor： GRUNER, Toralf ,  HARTJES, Joachim ,  HAUF, Markus ,  BEURER, Gerhard

IPC: G03F7/20 ,  G02B7/00 ,  G02B7/18 ,  G01J5/08

Abstract: Die Erfindung betrifft ein Verfahren und eine Vorrichtung zum Bestimmen des Erwärmungszustandes eines optischen Elements in einem optischen System für die Mikrolithographie, wobei wenigstens ein berührungsloser, auf dem Empfang elektromagnetischer Strahlung von dem optischen Element (301, 401, 402, 403, 501, 502, 503, 504, 601) basierender Sensor (330, 430, 531, 532, 533, 534, 631, 632) verwendet wird, und wobei zur Ermittlung einer Temperaturverteilung in dem optischen Element der von dem Sensor (330, 430, 531, 532, 533, 534, 631, 632) erfasste Strahlungsbereich variiert wird.

公开(公告)号：WO2018177649A1

公开(公告)日：2018-10-04

申请号：PCT/EP2018/053769

申请日：2018-02-15

Applicant: CARL ZEISS SMT GMBH ,  LIPPERT, Johannes ,  GRUNER, Toralf ,  HILD, Kerstin

Inventor： LIPPERT, Johannes ,  GRUNER, Toralf ,  HILD, Kerstin

IPC: G03F7/20 ,  G21K1/06

Abstract: Die Erfindung betrifft einen Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage, wobei der Spiegel eine optische Wirkfläche aufweist, mit einem Substrat (11, 61, 71, 81, 91), einem Reflexionsschichtsystem (16, 66, 76, 86, 96) zur Reflexion von auf die optische Wirkfläche (10a, 60a, 70a, 80a, 90a) auftreffender elektromagnetischer Strahlung, einer auf dem Substrat (11, 61, 71, 81, 91) vorgesehenen Elektrodenanordnung (13, 63, 73, 83) aus einem ersten Material mit einer ersten elektrischen Leitfähigkeit und einer Vermittlerschicht (12, 62, 72, 82, 92) aus einem zweiten Material mit einer zweiten elektrischen Leitfähigkeit, wobei das Verhältnis zwischen der ersten und der zweiten elektrischen Leitfähigkeit wenigstens 100 beträgt, wobei der Spiegel wenigstens eine Kompensationsschicht (88) aufweist, welche den Einfluss einer thermischen Ausdehnung der Elektrodenanordnung (83) auf die Deformation der optischen Wirkfläche (80a) wenigstens teilweise kompensiert.

公开(公告)号：WO2017174366A1

公开(公告)日：2017-10-12

申请号：PCT/EP2017/056909

申请日：2017-03-23

Applicant: CARL ZEISS SMT GMBH

Inventor： GRUNER, Toralf ,  SCHÖMER, Ricarda

IPC: G03F7/20 ,  G02B27/00

Abstract: An attenuation filter (AF, AF', AF1, AF2, AF3) is configured for the defined attenuation of the intensity of ultraviolet radiation (LR1I, LR2I) with a specified working wavelength from a wave-length range of 150 nm to 370 nm according to a specifiable local distribution in a projection lens (PO, PO') of a microlithographic projection exposure apparatus (WSC). The attenuation filter has a substrate (SU, SU') and an absorption layer (AL). The substrate is sufficiently transparent at the working wavelength. The absorption layer is arranged on the substrate and absorbs incident ultraviolet radiation of the working wavelength according to the specifiable local distribution at different locations (Z1, Z2) of a used area (UA) to varying degrees. The attenuation filter is designed for reducing or avoiding a thermally induced wavefront variation error in the ultraviolet radiation (LR1O, LR2O) which has passed through the attenuation filter owing to locally varying heating of the substrate, which is caused by the absorption of the ultraviolet radiation that varies locally over the substrate. A thickness (TS) of the substrate (SU) is less than 100 µm.

Abstract translation: 衰减滤波器（AF，AF'，AF1，AF2，AF3）被配置用于从波长中规定的工作波长的紫外线辐射强度（LR1I，LR2I） 根据微光刻投影曝光设备（WSC）的投影透镜（PO，PO'）中的可指定的局部分布，在150nm至370nm的范围内。 衰减滤波器具有衬底（SU，SU'）和吸收层（AL）。 衬底在工作波长处足够透明。 吸收层设置在基板上，并根据使用区域（UA）的不同位置（Z1，Z2）处的可指定的局部分布不同程度地吸收工作波长的入射紫外线辐射。 衰减滤波器被设计用于减少或避免由于紫外辐射的吸收而引起的衬底的局部变化的加热，已经通过衰减滤波器的紫外辐射（LR1O，LR2O）中的热引起的波前变化误差 在衬底上局部变化。 衬底（SU）的厚度（TS）小于100微米

公开(公告)号：WO2015007298A1

公开(公告)日：2015-01-22

申请号：PCT/EP2013/002114

申请日：2013-07-17

Applicant: CARL ZEISS SMT GMBH

Inventor： KAMENOV, Vladimir ,  GRUNER, Toralf

IPC: G03F7/20 ,  G02B5/20

CPC classification number: G03F7/70308 ,  G02B5/1838 ,  G02B5/208 ,  G03F7/70091 ,  G03F7/70258 ,  G03F7/70316

Abstract: A microlithographic apparatus comprises a light source producing projection light having a center wavelength λ and a projection objective having an optical axis and a transmission filter system. The latter comprises a first and a second diffractive optical element (44, 46). A drive (48) is configured to change the relative position between the first and the second diffractive optical element between an active position, in which the combination of the two diffractive optical elements diffracts more projection light on a light absorbing element than in a neutral position. The axial distance Δz between the two diffractive optical elements (44, 46) fulfils the condition 0 ≤Δz ≤ 3λ.

Abstract translation: 微光刻设备包括产生具有中心波长λ的投影光的光源和具有光轴的投影物镜和透射滤光镜系统。 后者包括第一和第二衍射光学元件（44,46）。 驱动器（48）构造成在第一和第二衍射光学元件之间的相对位置之间改变，其中两个衍射光学元件的组合将光吸收元件上的更多的投影光衍射到在中性位置 。 两个衍射光学元件（44,46）之间的轴向距离＆Dgr; z满足条件0≤＆Dgr;z≤3λ。

公开(公告)号：WO2013152951A1

公开(公告)日：2013-10-17

申请号：PCT/EP2013/056456

申请日：2013-03-27

Applicant: CARL ZEISS SMT GMBH

Inventor： ENDRES, Martin ,  GRUNER, Toralf

IPC: G03F7/20

CPC classification number: G03F7/70191 ,  G03F7/70066 ,  G03F7/70083 ,  G03F7/70091 ,  G03F7/70141 ,  G03F7/7015

Abstract: An illumination intensity correction device (24) serves for predefining an illumination intensity over an illumination field (18) of a lithographic projection exposure apparatus. The correction device (24) has a plurality of bar-shaped individual stops (27) arranged alongside one another and having bar axes (28) arranged parallel to one another, which are arranged in a manner lined up alongside one another transversely with respect to the bar axes. The individual stops (27) are displaceable into a predefined intensity correction displacement position at least along their respective bar axis (28) with the aid of a displacement drive (29) individually for the purpose of predefining an intensity correction of an illumination of the illumination field (18). At least some of the individual stops (27 FB ) are embodied as field delimiting individual stops such that they are displaceable along their bar axis (28) between a completely extended extension position and a completely retracted retraction position by more than a field extent (18 y ) of the illumination field (18) which the latter has along the bar axis (28). This results in an illumination intensity correction device having an improved correction accuracy in comparison with the prior art.

Abstract translation: 照明强度校正装置（24）用于预定光刻投影曝光装置的照明场（18）上的照明强度。 校正装置（24）具有彼此并排设置的多个条形单独的止挡件（27），并且具有彼此平行布置的杆轴线（28），它们以相对于 杆轴。 至少借助于位移驱动器（29），各个停止件（27）可以至少沿其相应的杆轴线（28）移动到预定的强度校正位移位置中，以便预先定义照明的照明的强度校正 字段（18）。 各个止动件（27FB）中的至少一些被实施为场限定各个止挡件，使得它们可以沿着它们的杆轴线（28）在完全延伸的延伸位置和完全缩回的缩回位置之间移位多于一个场范围（18y） 的照明场（18），后者沿着杆轴线（28）。 这导致与现有技术相比具有改进的校正精度的照明强度校正装置。

公开(公告)号：WO2013113480A1

公开(公告)日：2013-08-08

申请号：PCT/EP2013/000200

申请日：2013-01-23

Applicant: CARL ZEISS SMT GMBH

Inventor： BLEIDISTEL, Sascha ,  HARTJES, Joachim ,  GRUNER, Toralf

IPC: G02B27/00 ,  G01N21/41 ,  G03F7/20

CPC classification number: G03F7/706 ,  G01K11/00 ,  G01M11/0242 ,  G01M11/0271 ,  G03F7/70141 ,  G03F7/70258 ,  G03F7/7085 ,  G03F7/70891

Abstract: A projection exposure apparatus (10) for microlithography comprises a measuring system (50) for measuring an optical element of the projection exposure apparatus. The measuring system (50) comprises: an irradiation device (54), which is configured to radiate measuring radiation (62) in different directions (64) onto the optical element (20), such that the measuring radiation (62) covers a respective optical path length (68) within the optical element (20) for the different directions (64) of incidence, a detection device (56), which is configured to measure, for the respective direction (64) of incidence, the corresponding optical path length covered by the measuring radiation (62) in the optical element (20), and an evaluation device, which is configured to determine a spatially resolved distribution of the refractive index in the optical element (20) by computed-tomographic back projection of the measured path lengths taking account of the respective direction of incidence.

Abstract translation: 用于微光刻的投影曝光装置（10）包括用于测量投影曝光装置的光学元件的测量系统（50）。 测量系统（50）包括：照射装置（54），其配置成将不同方向（64）上的测量辐射（62）辐射到光学元件（20）上，使得测量辐射（62）覆盖相应的 用于不同方向（64）入射的光学元件（20）内的光路长度（68）;检测装置（56），被配置为针对相应的入射方向（64）测量相应的光路 由所述光学元件（20）中的所述测量辐射（62）覆盖的长度以及评估装置，其被配置为通过所述光学元件（20）的计算机断层摄影反投影来确定所述光学元件（20）中的折射率的空间分辨分布 测量的路径长度考虑到相应的入射方向。