公开(公告)号：WO2015073502A1

公开(公告)日：2015-05-21

申请号：PCT/US2014/065161

申请日：2014-11-12

Applicant: CBRITE INC.

Inventor： YU, Gang ,  SHIEH, Chan-Long ,  MUSOLF, Juergen ,  FOONG, Fatt ,  XIAO, Tian

IPC: H01L21/36 ,  H01L21/38 ,  H01L29/86

CPC classification number: H01L27/1203 ,  H01L21/02565 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.

Abstract translation: 一种制造高迁移率半导体金属氧化物薄膜晶体管的方法，包括以下步骤：沉积半导体金属氧化物材料层，在MO材料层上沉积蚀刻停止材料的覆盖层，以及图案化源/漏层 包括将源极/漏极金属层蚀刻成定位成限定半导体金属氧化物层中的沟道区域的源极/漏极端子的蚀刻停止材料的覆盖层上的金属。 蚀刻停止材料至少在源极/漏极端子之下在垂直于覆盖层的平面的方向上导电，以提供每个源极/漏极端子和半导体金属氧化物材料层之间的电接触。 蚀刻停止材料也是化学稳固的，以在蚀刻工艺期间保护半导体金属氧化物沟道材料层。

公开(公告)号：WO2014189681A2

公开(公告)日：2014-11-27

申请号：PCT/US2014/037191

申请日：2014-05-07

Applicant: CBRITE INC.

Inventor： SHIEH, Chan-long ,  YU, Gang ,  FOONG, Fatt ,  MUSOLF, Juergen

IPC: H01L21/465

CPC classification number: H01L29/66969 ,  H01L21/02063 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76895 ,  H01L27/1225 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2021/775

Abstract: A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ . The layer of amorphous metal oxide has a mobility above 40 cm 2 /Vs and a carrier concentration in a range of approximately 10 18 cm -3 to approximately 5xl0 19 cm -3 . Source/drain contacts are positioned on the protective layer and in electrical contact therewith.

Abstract translation: 制造稳定的高迁移率无定形MOTFT的方法包括提供其上形成有栅极的基板和位于栅极上方的栅介质层的步骤。 通过溅射将载流子传输结构沉积在栅极介电层上。 载流子传输结构包括邻近栅极电介质的非晶高迁移率金属氧化物层，以及沉积在无氧和原位沉积的无定形高迁移率金属氧化物层上的相对惰性的材料保护层。 无定形金属氧化物层的迁移率高于40cm 2 / Vs，载流子浓度在约1018cm-3至约5×1019cm-3的范围内。 源极/漏极触点位于保护层上并与其电接触。

公开(公告)号：WO2014099590A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/074607

申请日：2013-12-12

Applicant: CBRITE INC.

Inventor： SHIEH, Chan-Long ,  FOONG, Fatt ,  MUSOLF, Juergen ,  YU, Gang

IPC: H01L21/00

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.

Abstract translation: 金属氧化物薄膜晶体管包括金属氧化物半导体沟道，金属氧化物半导体具有具有第一能级的导带。 晶体管还包括覆盖金属氧化物半导体沟道的至少一部分的钝化材料层。 钝化材料具有等于或小于第一能级高于0.5eV的第二能级的导带。