中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

10 records (took 0.217 seconds)

    TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET
    1.
    发明申请
    TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET 审中-公开
    具有减速补偿角度的双轴磁场传感器用于零偏移

    公开(公告)号：WO2012030488A1

    公开(公告)日：2012-03-08

    申请号：PCT/US2011/047113

    申请日：2011-08-09

    Applicant: EVERSPIN TECHNOLOGIES, INC. ,  SUN, Jijun ,  MATHER, Phillip ,  PIETAMBARAM, Srinivas ,  SLAUGHTER, Jon ,  WHIG, Renu ,  RIZZO, Nicholas

    Inventor： SUN, Jijun ,  MATHER, Phillip ,  PIETAMBARAM, Srinivas ,  SLAUGHTER, Jon ,  WHIG, Renu ,  RIZZO, Nicholas

    IPC: G11B5/33

    CPC classification number: H01L43/10 ,  G01R33/098 ,  H01L43/12 ,  Y10T29/49117

    Abstract: A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers sepatared by a amorphous layer.

    Abstract translation: 提供传感器和制造工艺，用于形成具有基本上正交的磁化方向的参考层，具有零偏移并且具有小的补偿角。 示例性实施例包括基于磁阻薄膜的磁场传感器的传感器层堆叠，传感器层堆叠包括钉扎层; 包括在钉扎层上的无定形材料层的钉扎层和在非晶材料层上的第一层结晶材料; 在被钉扎层上的非磁性耦合层; 在非磁耦合层上的固定层; 固定层上的隧道势垒; 以及在非磁性中间层上的感测层。 另一个实施例包括传感器层堆叠，其中包括由非晶层隔开的两个结晶层的钉扎层。

    MAGNETORESISTIVE STACKS AND METHODS THEREFOR
    2.
    发明申请
    MAGNETORESISTIVE STACKS AND METHODS THEREFOR 审中-公开

    公开(公告)号：WO2019090060A2

    公开(公告)日：2019-05-09

    申请号：PCT/US2018/058935

    申请日：2018-11-02

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： IKEGAWA, Sumio ,  SLAUGHTER, Jon ,  WHIG, Renu

    Abstract: A magnetoresistive stack includes a seed region formed above a base region, a fixed magnetic region formed above the seed region and an intermediate region positioned between the fixed magnetic region and a free magnetic region. The base region may be formed of a material having a lower standard tree energy of oxidation than iron.

    MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：WO2020106552A1

    公开(公告)日：2020-05-28

    申请号：PCT/US2019/061588

    申请日：2019-11-15

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： SUN, Jijun ,  AGGARWAL, Sanjeev ,  CHIA, Han-Jong ,  SLAUGHTER, Jon, M. ,  WHIG, Renu

    IPC: H01L43/08 ,  H01L43/12

    Abstract: A magnetoresistive stack/ structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/- 10%) and less than or equal to 60 Angstroms (+/- 10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/- 10%) or 30-50 atomic percent (+/- 10%).

    MAGNETORESISTIVE STACKS AND FABRICATION THEREOF
    5.
    发明申请
    MAGNETORESISTIVE STACKS AND FABRICATION THEREOF 审中-公开

    公开(公告)号：WO2019090060A3

    公开(公告)日：2019-05-09

    申请号：PCT/US2018/058935

    申请日：2018-11-02

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： IKEGAWA, Sumio ,  SLAUGHTER, Jon ,  WHIG, Renu

    IPC: H01L43/08 ,  H01L43/10 ,  H01F10/30

    Abstract: A magnetoresistive stack (100) includes a free magnetic region (70), an intermediate region (60), and a fixed magnetic region (50), preferably comprising a reference region (58), a transition region (56), and a synthetic antiferromagnetic (SAF) structure (52A, 54, 52B), formed above a seed region (40) on a base region (30). At least one of the base region, transition region, and reference region is formed of a material having a lower standard free energy of oxidation than iron, preferably an iron boron alloy.

    MAGNETORESISTIVE STACK, SEED REGION THEREFOR AND METHOD OF MANUFACTURING SAME
    7.
    发明申请
    MAGNETORESISTIVE STACK, SEED REGION THEREFOR AND METHOD OF MANUFACTURING SAME 审中-公开
    磁阻堆栈，种子区域及其制造方法

    公开(公告)号：WO2017100547A1

    公开(公告)日：2017-06-15

    申请号：PCT/US2016/065792

    申请日：2016-12-09

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： WHIG, Renu ,  SLAUGHTER, Jon ,  CHIA, Han-jong

    IPC: G11C11/00 ,  G11B5/39 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/82 ,  H01L43/02

    CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/- 10%) and less than or equal to 60 Angstroms (+/- 10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/- 10%) or 30-50 atomic percent (+/- 10%).

    Abstract translation: 一种磁阻堆栈/结构及其制造方法，其包括：其中所述堆叠/结构包括种子区域，布置在所述种子区域上并与所述种子区域接触的固定磁性区域，设置在所述种子区域上的介电层 在固定磁性区域和设置在介电层上的自由磁性区域上。 在一个实施例中，种子区域包括含有镍和铬的合金，其具有（i）大于或等于40埃（+/- 10％）且小于或等于60埃（+/- 10％）的厚度， 和（ii）在25-60原子百分比（+/- 10％）或30-50原子百分比（+/- 10％）的范围内的铬的材料组成或含量。

    MAGNETIC TUNNEL JUNCTION STACK
    10.
    发明申请
    MAGNETIC TUNNEL JUNCTION STACK 审中-公开

    公开(公告)号：WO2010068539A1

    公开(公告)日：2010-06-17

    申请号：PCT/US2009/066407

    申请日：2009-12-02

    Applicant: EVERSPIN TECHNOLOGIES, INC. ,  WHIG, Renu ,  MANCOFF, Frederick B. ,  RIZZO, Nicholas D. ,  MATHER, Phillip G.

    Inventor： WHIG, Renu ,  MANCOFF, Frederick B. ,  RIZZO, Nicholas D. ,  MATHER, Phillip G.

    IPC: G11C11/00

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/12

    Abstract: A magnetic tunnel junction structure includes a layer of iron having a thickness in the range of 1 0 to 5 0 A disposed between a tunnel barrier and a free magnetic element resulting in high magnetoresistance, low damping and an improved ratio VcΛ/bd of critical switching voltage to tunnel barrier breakdown voltage for improved spin torque yield and reliability while requiring only a low temperature anneal This improved structure also has a very low resistance-area product MgON diffusion barrier between the free magnetic element and an electrode to prevent diffusion of the electrode into the free layer, which assists in keeping the damping, and therefore also the switching voltage, low With the low annealing temperature, the breakdown voltage is high, resulting in a favorable ratio of VcΛ/bd and in a high proportion of devices switching before breakdown, therefore improving the yield and reliability of the devices

    Abstract translation: 磁隧道结结构包括设置在隧道势垒和自由磁性元件之间的厚度在10至5 0 A范围内的铁层，导致高磁阻，低阻尼和改善的临界值的比率Vc？/ bd 切换电压到隧道势垒击穿电压，以提高自旋转矩的产量和可靠性，同时只需要低温退火。这种改进的结构在自由磁性元件和电极之间也具有非常低的电阻面积产物MgON扩散阻挡层，以防止电极扩散 进入自由层，这有助于保持阻尼，因此也具有开关电压低由于退火温度低，击穿电压较高，导致Vc？/ bd的有利比例和高比例的器件开关 在故障之前，因此提高了设备​​的产量和可靠性

Patent Agency Ranking