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    APPARATUS AND METHOD FOR FILM FORMATION
    1.
    发明申请
    APPARATUS AND METHOD FOR FILM FORMATION 审中-公开
    电影形成的装置和方法

    公开(公告)号：WO2014008557A1

    公开(公告)日：2014-01-16

    申请号：PCT/AU2013/000786

    申请日：2013-07-15

    Applicant: GALLIUM ENTERPRISES PTY LTD

    Inventor： BARIK, Satyanarayan ,  WINTREBERT EP FOUQUET, Marie-Pierre Francoise ,  MANN, Ian

    IPC: C23C16/44 ,  C23C16/52

    CPC classification number: C23C16/455 ,  C01B21/0632 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/513 ,  H01B1/06 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/2003

    Abstract: An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

    Abstract translation: 一种用于通过RPCVD在基板上形成薄膜的装置和方法，其提供非常低水平的碳和氧杂质，并且包括以下步骤：将VA族等离子体引入生长室的第一沉积区，引入IIIA族试剂 进入与第一沉积区分离的生长室的第二沉积区，并将一定量的选自氨，肼，二甲基肼和氢等离子体的附加试剂通过另外的试剂入口引入到 第二沉积区，使得附加试剂和IIIA族试剂在沉积之前混合。

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    3.
    发明申请
    "RPCVD APPARATUS AND METHODS FOR FORMING A FILM " 审中-公开

    公开(公告)号：WO2021042170A1

    公开(公告)日：2021-03-11

    申请号：PCT/AU2020/050931

    申请日：2020-09-04

    Applicant: GALLIUM ENTERPRISES PTY LTD

    Inventor： BROWN, Joshua David ,  BARIK, Satyanarayan ,  O'FARRELL, Stephen, Richard ,  MANN, Ian

    IPC: C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/458 ,  C23C16/455

    Abstract: RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

    BURIED ACTIVATED P-(AL,IN)GAN LAYERS
    4.
    发明申请
    BURIED ACTIVATED P-(AL,IN)GAN LAYERS 审中-公开

    公开(公告)号：WO2019094391A2

    公开(公告)日：2019-05-16

    申请号：PCT/US2018/059475

    申请日：2018-11-06

    Applicant: GALLIUM ENTERPRISES PTY LTD

    Inventor： MANN, Ian ,  BARIK, Satyanarayan ,  BROWN, Joshua David ,  LIU, Danyu

    Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H 2 and/or NH 3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

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