公开(公告)号：WO2014008557A1

公开(公告)日：2014-01-16

申请号：PCT/AU2013/000786

申请日：2013-07-15

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： BARIK, Satyanarayan ,  WINTREBERT EP FOUQUET, Marie-Pierre Francoise ,  MANN, Ian

IPC: C23C16/44 ,  C23C16/52

CPC classification number: C23C16/455 ,  C01B21/0632 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/513 ,  H01B1/06 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/2003

Abstract: An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

Abstract translation: 一种用于通过RPCVD在基板上形成薄膜的装置和方法，其提供非常低水平的碳和氧杂质，并且包括以下步骤：将VA族等离子体引入生长室的第一沉积区，引入IIIA族试剂 进入与第一沉积区分离的生长室的第二沉积区，并将一定量的选自氨，肼，二甲基肼和氢等离子体的附加试剂通过另外的试剂入口引入到 第二沉积区，使得附加试剂和IIIA族试剂在沉积之前混合。

公开(公告)号：WO2019094391A3

公开(公告)日：2019-05-16

申请号：PCT/US2018/059475

申请日：2018-11-06

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： MANN, Ian ,  BARIK, Satyanarayan ,  BROWN, Joshua David ,  LIU, Danyu

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H 2 and/or NH 3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

公开(公告)号：WO2013040659A1

公开(公告)日：2013-03-28

申请号：PCT/AU2012/001152

申请日：2012-09-21

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： BARIK, Satyanarayan

IPC: H01L31/042 ,  H01L31/06 ,  H01L31/0735

CPC classification number: H01L31/035236 ,  H01L31/03048 ,  H01L31/0735 ,  Y02E10/544

Abstract: An improved multiple quantum well solar cell can be achieved by ensuring the bandgap of each quantum well thin layer is not uniform compared with other such layers. Gradation of the bandgap by varying the content of at least two group II to VI elements, and/or varying the thickness of consecutive quantum well layers, within consecutively formed quantum wells provides for an increase in absorption across a greater range of the available solar spectrum.

Abstract translation: 通过确保每个量子阱薄层的带隙与其它这样的层相比不均匀可以实现改进的多量子阱太阳能电池。 在连续形成的量子阱中，通过改变至少两组II至VI元素的含量和/或改变连续量子阱层的厚度来使带隙的分级提供了可用太阳光谱的更大范围内的吸收增加 。

公开(公告)号：WO2010091470A1

公开(公告)日：2010-08-19

申请号：PCT/AU2010/000149

申请日：2010-02-12

Applicant: GALLIUM ENTERPRISES PTY LTD ,  REYNOLDS, Guy James ,  MARTIN, Conor Nicholas ,  GLOWACKI, Piotr ,  WINTREBERT EP FOUQUET, Marie-Pierre Francoise ,  BARIK, Satyanarayan ,  CHEN, Patrick Po-Tsang

Inventor： REYNOLDS, Guy James ,  MARTIN, Conor Nicholas ,  GLOWACKI, Piotr ,  WINTREBERT EP FOUQUET, Marie-Pierre Francoise ,  BARIK, Satyanarayan ,  CHEN, Patrick Po-Tsang

IPC: C23C16/24 ,  C23C16/452 ,  H05H1/00

CPC classification number: H01J37/32449 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45523 ,  C30B25/105 ,  C30B25/165 ,  C30B29/403 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32633 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/0262 ,  Y10T137/8593

Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

Abstract translation: 一种用于在基板上沉积III族金属氮化物膜的装置，该装置包括用于从氮源产生氮等离子体的等离子体发生器，其中使包含III族金属的试剂与衍生的反应性氮物质反应的反应室 从氮等离子体中沉积第III族金属氮化物到基板上，等离子体入口以促进氮等离子体从等离子体发生器通入反应室，以及具有一个或多个流动通道以使氮等离子体通过的挡板 。 挡板位于等离子体入口和基板之间，并且防止等离子体入口和基板之间的氮等离子体的直通通道。

公开(公告)号：WO2021042170A1

公开(公告)日：2021-03-11

申请号：PCT/AU2020/050931

申请日：2020-09-04

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： BROWN, Joshua David ,  BARIK, Satyanarayan ,  O'FARRELL, Stephen, Richard ,  MANN, Ian

IPC: C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/458 ,  C23C16/455

Abstract: RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

公开(公告)号：WO2019094391A2

公开(公告)日：2019-05-16

申请号：PCT/US2018/059475

申请日：2018-11-06

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： MANN, Ian ,  BARIK, Satyanarayan ,  BROWN, Joshua David ,  LIU, Danyu

Abstract: Methods for fabricating semiconductor devices incorporating an activated p-(Al,In)GaN layer include exposing a p-(Al,In)GaN layer to a gaseous composition of H 2 and/or NH 3 under conditions that would otherwise passivate the p-(Al,In)GaN layer. The methods do not include subjecting the p-(Al,In)GaN layer to a separate activation step in a low hydrogen or hydrogen-free environment. The methods can be used to fabricate buried activated n/p-(Al,In)GaN tunnel junctions, which can be incorporated into electronic devices.

公开(公告)号：WO2015106318A1

公开(公告)日：2015-07-23

申请号：PCT/AU2015/050013

申请日：2015-01-15

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： MANN, Ian ,  BARIK, Satyanarayan ,  WINTREBERT-FOUQUET, Marie ,  BROWN, Josh ,  DUNNIGAN, Paul

IPC: H05H1/46 ,  C23C16/34 ,  C23C16/00

CPC classification number: C23C16/50 ,  C23C16/34 ,  C23C16/509 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32486 ,  H01J2237/3321

Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.

Abstract translation: 描述了一种使用部分PBN衬垫的等离子体发生器，其不仅使成膜期间能量气体种类的损失最小化，而且还减少了相对于使用完整的PBN衬垫引入生长膜的硼杂质水平。 还描述了在成膜装置中使用这种等离子体发生器和形成膜的方法。