公开(公告)号：WO2010005700A3

公开(公告)日：2010-03-04

申请号：PCT/US2009047357

申请日：2009-06-15

Applicant: KLA TENCOR CORP ,  HESS CARL E ,  XIONG YALIN

Inventor： HESS CARL E ,  XIONG YALIN

IPC: H01L21/66 ,  H01L21/027

CPC classification number: G03F1/84 ,  G03F1/36

Abstract: Disclosed are methods and apparatus for inspecting a sub-resolution assist features (SRAF) on a reticle. A test flux measurement for a boundary area that encompasses a width and a length portion of a test SRAF is determined, and at least one reference flux measurement for one or more boundary areas of one or more reference SRAF's is determined. The test flux measurement is compared with the reference flux measurements. The comparison is used to then determine whether the test SRAF is undersized or oversized. If the test SRAF is determined to be oversized, it may then be determined whether the test SRAF is defective based on the comparison using a first threshold.

Abstract translation: 公开了用于检查掩模版上的分解度辅助特征（SRAF）的方法和装置。 确定包含测试SRAF的宽度和长度部分的边界区域的测试磁通量测量，并且确定一个或多个参考SRAF的一个或多个边界区域的至少一个参考通量测量。 将测试磁通量测量与参考通量测量值进行比较。 比较用于确定测试SRAF是否尺寸过小或过大。 如果测试SRAF被确定为过大，则可以基于使用第一阈值的比较来确定测试SRAF是否有缺陷。

公开(公告)号：WO2012125581A3

公开(公告)日：2012-12-27

申请号：PCT/US2012028812

申请日：2012-03-12

Applicant: KLA TENCOR CORP ,  XIONG YALIN ,  STOKOWSKI STANLEY E

Inventor： XIONG YALIN ,  STOKOWSKI STANLEY E

IPC: G03F1/22 ,  G03F1/72 ,  G03F1/84

CPC classification number: G03F1/24 ,  G03F1/72 ,  G03F1/84

Abstract: An EUV integrated circuit fabrication method and system EUV that includes blank inspection, defect characterization, simulation, pattern compensation, modification of the mask writer database, inspection and simulation of patterned masks, and patterned mask repair. The system performs blank inspection to identify defects at multiple focal planes within the blank. The mask can be relocated on the blank and alterations to the pattern can be developed to compensate for the defects prior to prior to patterning the mask. Once the mask has been patterned, the reticle is inspected to identify any additional or remaining defects that were not picked up during blank inspection or fully mitigated through pattern compensation. The patterned reticle can then be repaired prior to integrated circuit fabrication.

Abstract translation: EUV集成电路制造方法和系统EUV包括空白检查，缺陷表征，模拟，图案补偿，掩模写入器数据库的修改，图案化掩模的检查和模拟以及图案化掩模修复。 系统执行空白检查以识别空白中多个焦平面上的缺陷。 掩模可以重新定位在坯件上，并且可以开发对图案的改变以在图案化掩模之前补偿缺陷。 一旦掩模被图案化，检查掩模版以识别在空白检查期间未被拾取的任何附加或剩余的缺陷，或通过图案补偿完全减轻。 然后可以在集成电路制造之前修复图案化的掩模版。

公开(公告)号：WO2012030825A2

公开(公告)日：2012-03-08

申请号：PCT/US2011049739

申请日：2011-08-30

Applicant: KLA TENCOR CORP ,  SHI RUIFANG ,  XIONG YALIN

Inventor： SHI RUIFANG ,  XIONG YALIN

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F1/84

Abstract: Provided are novel methods and systems for inspecting photomasks to identify lithographically significant contamination defects. Inspection may be performed without a separate reference image provided from a database or another die. Inspection techniques described herein involve capturing one or more test images of a photomask and constructing corresponding test "simulation" images using specific lithographic and/or resist models. These test simulation images simulate printable and/or resist patterns of the inspected photomask. Furthermore, the initial test images are used in parallel operations to generate "synthetic" images. These images represent a defect-free photomask pattern. The synthetic images are then used for generating reference simulation images, which are similar to the test simulation images but are free from lithographically significant contamination defects. Finally, the reference simulation images are compared to the test simulation images to identify the lithographically significant contamination defects on the photomask.

Abstract translation: 提供了用于检查光掩模以识别光刻显着污染缺陷的新颖方法和系统。 可以在没有从数据库或另一个骰子提供的单独参考图像的情况下执行检查。 本文描述的检查技术涉及捕获光掩模的一个或多个测试图像并且使用特定的光刻和/或抗蚀剂模型构建对应的测试“模拟”图像。 这些测试模拟图像模拟可检测光掩模的可印刷和/或抗蚀图案。 此外，初始测试图像被用于并行操作以生成“合成”图像。 这些图像代表无缺陷的光掩模图案。 合成图像然后用于生成参考模拟图像，其与测试模拟图像相似，但没有平版印刷显着的污染缺陷。 最后，将参考模拟图像与测试模拟图像进行比较，以识别光掩模上的光刻显着污染缺陷。

公开(公告)号：WO2005057438A3

公开(公告)日：2006-02-23

申请号：PCT/US2004040733

申请日：2004-12-06

Applicant: KLA TENCOR TECH CORP ,  HESS CARL ,  XIONG YALIN

Inventor： HESS CARL ,  XIONG YALIN

IPC: G06F17/50 ,  G03F1/00 ,  G03F1/14

CPC classification number: G03F1/84 ,  G03F1/36

Abstract: Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Abstract translation: 提供了各种计算机实现的方法。 用于生成用于检查标线布局数据的处理的一种方法包括识别标线布局数据中的第一区域。 第一区域的可印刷性对于工艺参数的改变比在标线布局数据中的第二区域的可印刷性更敏感。 该方法还包括将一个或多个检查参数分配给第一区域和第二区域，使得在处理期间将以比第二区域更高的灵敏度对第一区域进行检查。 另一种方法包括以比第二区域更高的灵敏度检查第一区域。 另外一种方法包括模拟标线布局数据如何打印。 利用一个或多个不同的模拟参数来执行第一和第二区域的模拟，使得以比第二区域更高的保真度来模拟第一区域。

公开(公告)号：WO2011084703A3

公开(公告)日：2011-12-08

申请号：PCT/US2010061118

申请日：2010-12-17

Applicant: ADVANCED LIQUID LOGIC INC ,  ECKHARDT ALLEN E ,  GRAHAM CARRIE ,  SISTA RAMAKRISHNA ,  PAMULA VAMSEE K ,  WINGER THEODORE ,  WANG TONG ,  XIONG YALIN ,  WU NING ,  SAHA SANJAY ,  RAOLJI GAJENDRASINH BALVANTSINH ,  DAYAM RAVEENDRA

Inventor： ECKHARDT ALLEN E ,  GRAHAM CARRIE ,  SISTA RAMAKRISHNA ,  PAMULA VAMSEE K ,  WINGER THEODORE ,  WANG TONG ,  XIONG YALIN ,  WU NING ,  SAHA SANJAY ,  RAOLJI GAJENDRASINH BALVANTSINH ,  DAYAM RAVEENDRA

IPC: C12Q1/34 ,  C07D311/06 ,  C07D311/18 ,  C12M1/34 ,  C12Q1/25 ,  G01N33/52

CPC classification number: C12Q1/40 ,  B01L3/502784 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/18 ,  B01L2400/0427 ,  B01L2400/043 ,  C07D311/16 ,  C07D311/18 ,  C07D311/20 ,  C07D405/12 ,  C07D413/12 ,  C07H15/203 ,  C07H17/075 ,  C12Q1/25 ,  C12Q1/34 ,  C12Q1/44 ,  C12Q1/54 ,  C12Y302/01023 ,  G01N21/6452 ,  G01N33/5438 ,  G01N2333/916 ,  G01N2333/926 ,  G01N2333/938 ,  G01N2800/04

Abstract: The invention is directed to droplet actuator devices and assay methods for multiplexed newborn testing for metabolic disorders. The methods include, among other things, droplet-based enzymatic assays and immunoassays for testing for metabolic disorders. The invention includes methods and devices for conducting multiple assays for different metabolic disorders on a single droplet actuator, as well as multiple assays for the same metabolic disorder using samples from different subjects and/or multiple samples from the same subject on a single droplet actuator. In various embodiments, the invention includes methods for conducting enzymatic activity assays and/or immunoassays in a single fresh blood and/or plasma samples and dried blood and/or plasma samples.

Abstract translation: 本发明涉及用于代谢紊乱的多路复用新生儿测试的液滴致动器装置和测定方法。 除其他之外，所述方法包括基于液滴的酶测定和用于测试代谢紊乱的免疫测定。 本发明包括用于在单一液滴致动器上针对不同代谢病症进行多种测定的方法和装置，以及使用来自不同受试者的样品和/或来自单个液滴致动器上的来自相同受试者的多个样品的相同代谢病症的多种测定。 在各种实施方式中，本发明包括用于在单个新鲜血液和/或血浆样品以及干燥的血液和/或血浆样品中进行酶活性测定和/或免疫测定的方法。

公开(公告)号：WO2008086494A3

公开(公告)日：2008-11-20

申请号：PCT/US2008050798

申请日：2008-01-10

Applicant: KLA TENCOR TECH CORP ,  XIONG YALIN ,  SHI RUI-FANG

Inventor： XIONG YALIN ,  SHI RUI-FANG

IPC: G03F1/00 ,  G01N21/956

CPC classification number: G03F1/84 ,  G01N21/95607 ,  G03F7/7065 ,  G03F7/70666

Abstract: A method and tool for generating reconstructed images that model the high NA effects of a lithography tool used to image patterns produced by a mask. Comparison of the reconstructed images with reference images characterize the mask. The method involves providing a mask reticle for inspection. Generating matrix values associated with a high NA corrective filter matrix that characterizes a high NA lithography system used to print from the mask. Illuminating the mask to produce a patterned illumination beam that is filtered with filters associated with the high NA corrective filter matrix elements to obtain a plurality of filtered beams that include raw image data that is processed to obtain a reconstructed image that is further processed and compared with reference images to obtain mask characterization information.

Abstract translation: 一种用于产生重建图像的方法和工具，其对用于对由掩模产生的图像进行成像的光刻工具的高NA效应进行建模。 重建图像与参考图像的比较表征掩模。 该方法涉及提供掩模掩模以进行检查。 生成与用于从掩模打印的高NA光刻系统的高NA校正滤波器矩阵相关联的矩阵值。 照亮掩模以产生图案化照明光束，其用与高NA校正滤波器矩阵元素相关联的滤波器进行滤波，以获得包括原始图像数据的多个滤波光束，该原始图像数据被处理以获得进一步处理并与 参考图像以获得掩模表征信息。

公开(公告)号：WO2008086528A2

公开(公告)日：2008-07-17

申请号：PCT/US2008050914

申请日：2008-01-11

Applicant: KLA TENCOR TECH CORP ,  WIHL MARK J ,  XIONG YALIN ,  YIIN LIH-HUAH

Inventor： WIHL MARK J ,  XIONG YALIN ,  YIIN LIH-HUAH

IPC: G03F1/00

CPC classification number: G03F1/84

Abstract: A method for identifying lithographically significant defects. A photomask is illuminated to produce images that experience different parameters of the reticle as imaged by an inspection tool. Example parameters include a transmission intensity image and a reflection intensity image. The images are processed together to recover a band limited mask pattern associated with the photomask. A model of an exposure lithography system for chip fabrication is adapted to accommodate the band limited mask pattern as an input which is input into the model to obtain an aerial image of the mask pattern that is processed with a photoresist model yielding a resist-modeled image. The resist-modeled image is used to determine if the photomask has lithographically significant defects.

Abstract translation: 用于识别光刻显着缺陷的方法。 光掩模被照亮以产生经由检查工具成像的掩模版的不同参数的图像。 示例性参数包括传输强度图像和反射强度图像。 一起处理图像以恢复与光掩模相关联的带限制掩模图案。 用于芯片制造的曝光光刻系统的模型适于适应带限制掩模图案作为输入到输入到模型中以获得用光致抗蚀剂模型处理的掩模图案的空间图像，产生抗蚀剂建模图像 。 使用抗蚀剂建模的图像来确定光掩模是否具有光刻显着的缺陷。

公开(公告)号：WO2014186476A3

公开(公告)日：2015-03-26

申请号：PCT/US2014038017

申请日：2014-05-14

Applicant: KLA TENCOR CORP

Inventor： SOUSA WESTON L ,  XIONG YALIN ,  SHI RUI-FANG

IPC: H01L21/66

CPC classification number: G01N21/8851 ,  G01N21/94 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/558 ,  G01N2021/8867 ,  G01N2021/95676 ,  G01N2201/12 ,  G03F1/84 ,  G06T7/0004 ,  G06T7/001 ,  G06T7/10 ,  G06T7/136 ,  G06T2207/30148

Abstract: Methods and systems for integrated multi-pass reticle inspection are provided. One method for inspecting a reticle includes acquiring at least first, second, and third images for the reticle. The first image is a substantially high resolution image of light transmitted by the reticle. The second image is a substantially high resolution image of light reflected from the reticle. The third image is an image of light transmitted by the reticle that is acquired with a substantially low numerical aperture. The method also includes detecting defects on the reticle using at least the first, second, and third images for the reticle in combination.

Abstract translation: 提供了综合多通道掩模检测的方法和系统。 用于检查掩模版的一种方法包括获取用于掩模版的至少第一，第二和第三图像。 第一个图像是由光罩传输的光的基本上高分辨率的图像。 第二个图像是从掩模版反射的光的基本上高分辨率的图像。 第三图像是由具有基本上低的数值孔径获得的掩模版传输的光的图像。 该方法还包括组合使用至少第一，第二和第三图像来检测掩模版上的缺陷。