公开(公告)号：WO2006071544A2

公开(公告)日：2006-07-06

申请号：PCT/US2005/045361

申请日：2005-12-15

Applicant: LAM RESEARCH CORPORATION ,  HUANG, Tuochuan ,  REN, Daxing ,  SHIH, Hong ,  ZHOU, Catherine ,  YAN, Chun ,  MAGNI, Enrico ,  YEN, Bi, Ming ,  HUBACEK, Jerome ,  LIM, Dae, J. ,  SUNG, Dougyong

Inventor： HUANG, Tuochuan ,  REN, Daxing ,  SHIH, Hong ,  ZHOU, Catherine ,  YAN, Chun ,  MAGNI, Enrico ,  YEN, Bi, Ming ,  HUBACEK, Jerome ,  LIM, Dae, J. ,  SUNG, Dougyong

IPC: B44C1/22 ,  C23F1/00

CPC classification number: H01L21/67069 ,  B08B3/10 ,  B08B3/12 ,  B24C1/003 ,  H01J37/32605

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Abstract translation: 用于清洁电极组件的方法，其可以用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。

公开(公告)号：WO2022010809A1

公开(公告)日：2022-01-13

申请号：PCT/US2021/040381

申请日：2021-07-02

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  TAN, Samantha S.H. ,  ALVI, Mohammed Haroon ,  WISE, Richard ,  PAN, Yang ,  GOTTSCHO, Richard A. ,  LAVOIE, Adrien ,  KANAKASABAPATHY, Sivananda Krishnan ,  WEIDMAN, Timothy William ,  LIN, Qinghuang ,  HUBACEK, Jerome

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67 ,  C23C16/00 ,  G03F7/0042 ,  G03F7/167 ,  G03F7/168 ,  H01L21/67167 ,  H01L21/67207

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

公开(公告)号：WO2021225809A1

公开(公告)日：2021-11-11

申请号：PCT/US2021/029053

申请日：2021-04-26

Applicant: LAM RESEARCH CORPORATION ,  SILFEX, INC.

Inventor： TORBATISARRAF, Seyedalireza ,  RAO, Abhinav Shekhar ,  CHEN, Jihong ,  SONG, Yi ,  HUBACEK, Jerome ,  NITHIANANTHAN, Vijay

IPC: B28B1/00 ,  C23C16/24 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y70/00

Abstract: A method of performing 3D printing of a silicon component includes adding powdered silicon to a 3D printing tool. For each layer of the 3D printing, the process includes forming a powder bed of the powdered silicon, forming a layer of the powder bed to a pre-determ ined thickness, directing a high-powered beam in a pre-determ ined pattern into the powder-bed to melt the powdered silicon. After no further layers are needed, the silicon component is cooled at a pre-determ ined temperature ramp-down rate. In a fully dense printing method, buffer layers of silicon are initially printed on a steel substrate, and then layers of silicon for the actual component are printed on top of the buffer layers using a double printing method. In a fully dense and crack free printing method, one or more heaters and thermal insulation are used to minimize temperature gradient during Si printing, in-situ annealing, and cooling.

公开(公告)号：WO2021041115A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/046997

申请日：2020-08-19

Applicant: LAM RESEARCH CORPORATION ,  SILFEX, INC.

Inventor： RAO, Abhinav Shekhar ,  TORBATISARRAF, Seyedalireza ,  HUBACEK, Jerome ,  CHEN, Jihong ,  SONG, Yi

IPC: H05H1/34 ,  H05H1/42 ,  H05H1/28 ,  H01L21/67

Abstract: A system comprises an apparatus having a nozzle. An element is arranged around the apparatus. A feeder is configured to supply a powder of a material into the apparatus. A gas source is configured to supply a precursor gas into the apparatus and to supply an inert gas to circulate through a space between the element and the apparatus and to exit around the nozzle. A plasma generator is arranged in the apparatus and is configured to ionize the precursor gas and atomize the powder and to eject through the nozzle a jet of particles composed of the atomized powder and the ionized precursor gas onto a substrate arranged adjacent to the nozzle.