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公开(公告)号:WO2019009785A1
公开(公告)日:2019-01-10
申请号:PCT/SE2018/050666
申请日:2018-06-20
Applicant: LIGHTLAB SWEDEN AB , NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: TIRÉN, Jonas , HOLLMAN, Patrik , DEMIR, Hilmi Volkan , SHARMA, Vijay Kumar , TAN, Swee Tiam
Abstract: The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.
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2.
公开(公告)号:WO2018151645A1
公开(公告)日:2018-08-23
申请号:PCT/SE2018/050115
申请日:2018-02-08
Applicant: LIGHTLAB SWEDEN AB , NANYANG TECKNOLOGICAL UNIVERSITY
Inventor: TIRÉN, Jonas , DEMIR, Hilmi Volkan , SHARMA, Vijay Kumar , TAN, Swee Tiam
Abstract: The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. Each field emission light source comprising a cathode side including an electrical cathode connection and an oppositely arranged anode side including an electrical cathode connection. The method comprises: - arranging the plurality of field emission light sources in vicinity of each other in a matrix formation having m rows and n columns, where the electrical cathode connections for the field emission light sources are electrically connected to each other in line with the columns, and the electrical anode connection for the field emission light sources are electrically connected to each other in line with the rows, - providing an electrical interface point for each of the m rows and the n columns, and - applying a control signal to at least one of the electrical interface points at each of the m rows and to at least one of the electrical interface points at each of the n columns, thereby energizing at least one of the field emission light sources for emitting light. The invention also relates to a corresponding testing system.
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公开(公告)号:WO2019054942A1
公开(公告)日:2019-03-21
申请号:PCT/SG2018/050463
申请日:2018-09-11
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: ZHANG, Xueliang , TAN, Swee Tiam , DEMIR, Hilmi Volkan
Abstract: Various embodiments may provide a light-emitting device. The light-emitting device may include a first semiconductor layer of a first conductivity type. The light-emitting device may also include a second semiconductor layer of a second conductivity type different from the first conductivity type. The light-emitting device may further include an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device may include a current guide layer having a first surface in contact with a first portion of the second semiconductor layer, the current guide layer including a dielectric material. The light-emitting device may further include an electrically conductive layer in contact with a second portion of the second semiconductor layer. The light-emitting device may also include a first electrode in contact with the electrically conductive layer. The light-emitting device may further include a second electrode in contact with the first semiconductor layer.
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4.
公开(公告)号:WO2015152817A1
公开(公告)日:2015-10-08
申请号:PCT/SG2015/000048
申请日:2015-02-16
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: DEMIR, Hilmi Volkan , TAN, Swee Tiam
CPC classification number: H01L33/08 , H01L21/6835 , H01L33/007 , H01L33/0079 , H01L2221/6835 , H01L2221/68381
Abstract: In various embodiments, a method of recycling a carrier substrate is provided. The method comprises: providing said carrier substrate; forming a buffer layer by depositing a suitable material on the carrier substrate, forming one or more component layers over the buffer layer; separation of the one or more component layers from the carrier substrate so that at least a portion of the buffer layer remains on the carrier substrate after separation; and forming a further buffer layer from the portion of the buffer layer after the separation by depositing the suitable material to recycle the carrier substrate. Also a method of recycling a substrate is provided that comprises: forming an insulating layer on a substrate; removing a first portion of the insulating layer to expose a first portion of the substrate; forming one or more component layers over the first portion of the substrate; and separating the one or more component layers from the substrate for recycling the substrate.
Abstract translation: 在各种实施例中,提供了一种再循环载体衬底的方法。 该方法包括:提供所述载体衬底; 通过在所述载体衬底上沉积合适的材料形成缓冲层,在所述缓冲层上形成一个或多个组分层; 将一个或多个组分层与载体衬底分离,使得缓冲层的至少一部分在分离后残留在载体衬底上; 并且在分离之后通过沉积合适的材料以再循环载体基底从缓冲层的一部分形成另外的缓冲层。 还提供了一种再循环基底的方法,其包括:在基底上形成绝缘层; 去除所述绝缘层的第一部分以暴露所述衬底的第一部分; 在所述基板的所述第一部分上形成一个或多个部件层; 以及将所述一个或多个组分层与所述衬底分离以再循环所述衬底。
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公开(公告)号:WO2015084258A1
公开(公告)日:2015-06-11
申请号:PCT/SG2014/000541
申请日:2014-11-18
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: ZHANG, Xueliang , ZHANG, Zi-Hui , JI, Yun , JU, Zhen Gang , LIU, Wei , TAN, Swee Tiam , SUN, Xiaowei , DEMIR, Hilmi Volkan
CPC classification number: H01L27/156 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L2933/0016
Abstract: A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.
Abstract translation: 发光器件可以包括有源层。 发光器件可以包括第一导电类型的第一半导体层。 第一半导体层可以与有源层物理接触。 发光器件还可以包括第二导电类型的第二半导体层。 第二半导体层可以与有源层物理接触并与第一导电层相对。 发光器件还可以包括与第一半导体层的第一侧物理接触的第一电极。 发光装置还可以包括与第一半导体层的第二侧物理接触的第二电极。 第一半导体层的第二面可以与第一半导体层的第一侧不同。 发光器件还可以包括与第二半导体层物理接触的第三电极。
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公开(公告)号:WO2019054943A1
公开(公告)日:2019-03-21
申请号:PCT/SG2018/050464
申请日:2018-09-11
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: ZHANG, Xueliang , TAN, Swee Tiam , DEMIR, Hilmi Volkan
Abstract: Various embodiments may provide a light-emitting device. The light-emitting device may include an epitaxial stack arrangement. The epitaxial stack arrangement may also include a first semiconductor layer of a first conductivity type. The epitaxial stack arrangement may further include a second semiconductor layer of a second conductivity type different from the first conductivity type. The epitaxial stack arrangement may additionally include an active layer between the first semiconductor layer and the second semiconductor layer. The light-emitting device may also include a reflector stack arrangement over the epitaxial stack arrangement. The reflector stack arrangement may include a first dielectric structure. The reflector stack arrangement may also include a second dielectric structure on the first dielectric structure. The reflector stack arrangement may further include a reflector structure on the second dielectric structure. The reflector stack arrangement may additionally include a third dielectric structure on the reflector layer.
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公开(公告)号:WO2015174925A1
公开(公告)日:2015-11-19
申请号:PCT/SG2015/050105
申请日:2015-05-11
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: LIU, Wei , KYAW, Zabu , ZHANG, Zi-hui , ZHU, Binbin , JU, Zhengang , TAN, Swee Tiam , ZHANG, Xueliang , DEMIR, Hilmi Volkan
IPC: H01L33/14
CPC classification number: H01L33/06 , H01L33/007 , H01L33/32
Abstract: Various embodiments provide methods of forming a light emitting device and a light emitting device formed thereof. The light emitting device of various embodiments alters the polarity of the polarization induced interface charges, such that the polarity induced charges at an interface of an active layer and an electron blocking layer of the light-emitting devices are negative.
Abstract translation: 各种实施例提供了形成发光器件和由其形成的发光器件的方法。 各种实施例的发光器件改变极化诱导的界面电荷的极性,使得在发光器件的有源层和电子阻挡层的界面处的极性感应电荷是负的。
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公开(公告)号:WO2015174924A1
公开(公告)日:2015-11-19
申请号:PCT/SG2015/050100
申请日:2015-05-07
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: JU, Zhengang , LIU, Wei , ZHANG, Xueliang , TAN, Swee Tiam , JI, Yun , ZHANG, Zi-hui , DEMIR, Hilmi Volkan
CPC classification number: H01L33/647 , H01L33/0079 , H01L33/22 , H01L33/38 , H01L33/486 , H01L33/62 , H01L2224/16225 , H01L2933/0016 , H01L2933/0066 , H01L2933/0091
Abstract: Various embodiments provide a method of forming a light-emitting device. The method may include providing a multi-layer structure, wherein the multi-layer structure includes a substrate, a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type in sequence, and includes at least one metal contact formed on at least one of the first semiconductor layer and the second semiconductor layer. The method further includes forming at least one trench over the at least one metal contact, and forming at least one metal support in the at least one trenches.
Abstract translation: 各种实施例提供了一种形成发光器件的方法。 该方法可以包括提供多层结构,其中多层结构依次包括基底,第一导电类型的第一半导体层,有源层和第二导电类型的第二半导体层,并且包括在 形成在第一半导体层和第二半导体层中的至少一个上的至少一个金属接触。 所述方法还包括在所述至少一个金属接触件上方形成至少一个沟槽,以及在所述至少一个沟槽中形成至少一个金属支撑件。
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公开(公告)号:WO2013191649A1
公开(公告)日:2013-12-27
申请号:PCT/SG2013/000224
申请日:2013-05-30
Applicant: NANYANG TECHNOLOGICAL UNIVERSITY
Inventor: ZHANG, Zi-Hui , TAN, Swee Tiam , SUN, Xiaowei , DEMIR, Hilmi Volkan
IPC: H01L33/00
CPC classification number: H01L33/0016 , H01L33/005 , H01L33/04 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/40
Abstract: A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.
Abstract translation: 一种包括多个电流扩展层的发光器件,包括第一P掺杂层,第一N掺杂层和第二P掺杂层,其中所述N掺杂层具有被配置为实质耗尽或完全耗尽的掺杂水平和厚度。
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