公开(公告)号：WO2003030242A1

公开(公告)日：2003-04-10

申请号：PCT/US2001/029831

申请日：2001-09-19

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LEVY, Sagy ,  BLOOM, Robin, S. ,  KEPTEN, Dr., Avashai

IPC: H01L21/31

CPC classification number: H01L21/0214 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/40 ,  C23C16/405 ,  C23C16/52 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/3185

Abstract: A method for depositing a high-k dielelectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate on a semiconductor wafer. When forming a metal oxide or silicate, a passivation layer is first deposited onto the substrate.

Abstract translation: 提供了一种用于在诸如半导体晶片的衬底上沉积高k电介质涂层的方法。 在一个实施例中，该方法旨在在衬底上形成氮化物层。 在替代实施例中，本发明涉及在半导体晶片上形成金属氧化物或硅酸盐。 当形成金属氧化物或硅酸盐时，首先将钝化层沉积到衬底上。