公开(公告)号：WO2017123589A1

公开(公告)日：2017-07-20

申请号：PCT/US2017/012940

申请日：2017-01-11

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： NAGORNY, Vladimir ,  MA, Shawming ,  VANIAPURA, Vijay M. ,  PAKULSKI, Ryan M.

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H05H1/46 ,  H01L21/311 ,  H01L21/027

CPC classification number: H01L21/0206 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32651 ,  H01J2237/334 ,  H01L21/0273

Abstract: Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. The apparatus can further include a variable pattern separation grid separating the plasma chamber and the processing chamber. The variable pattern separation grid can include a plurality grid plates. Each grid plate can have a grid pattern with one or more holes. At least one of the plurality of grid plates is movable relative to the other grid plates in the plurality of grid plates such that the variable pattern separation grid can provide a plurality of different composite grid patterns.

Abstract translation: 提供了用于使用可变图案分离栅格在等离子体处理设备中处理衬底的系统，方法和设备。 在一个示例实施方式中，等离子体处理装置可具有等离子体室和与等离子体室分离的处理室。 该设备可以进一步包括分离等离子体腔室和处理腔室的可变图案分离栅格。 可变图案分离网格可以包括多个网格板。 每个网格板可以具有带有一个或多个孔的网格图案。 多个格栅板中的至少一个可相对于多个格栅板中的其他格栅板移动，使得可变图案分离格栅可提供多个不同的复合格栅图案。

公开(公告)号：WO2018226274A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/020098

申请日：2018-02-28

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： MA, Shawming ,  NAGORNY, Vladimir ,  DESAI, Dixit V. ,  PAKULSKI, Ryan M.

IPC: H01J37/32

Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

公开(公告)号：WO2009061670A2

公开(公告)日：2009-05-14

申请号：PCT/US2008/081923

申请日：2008-10-31

Applicant: MATTSON TECHNOLOGY, INC. ,  ZUCKER, Martin, L. ,  DEVINE, Daniel, J. ,  NAGORNY, Vladimir ,  MOHN, Jonathan

Inventor： ZUCKER, Martin, L. ,  DEVINE, Daniel, J. ,  NAGORNY, Vladimir ,  MOHN, Jonathan

IPC: H01L21/00 ,  H01L21/683

CPC classification number: H01L21/68 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67248

Abstract: A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

Abstract translation: 公开了一种限定工件接收表面的工件支架。 工件支撑件包括多个流体区域。 诸如气体之类的流体被供给到流体区域以与工件支撑件上的工件接触。 流体可以具有选定的热传导特性，用于在特定位置控制工件的温度。 根据本公开，至少某些流体区处于不同的方位位置。 以这种方式，工件的温度不仅可以在径向上调节，而且可以在角度方向上调节。

公开(公告)号：WO2018034715A1

公开(公告)日：2018-02-22

申请号：PCT/US2017/031847

申请日：2017-05-10

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： VANIAPURA, Vijay M. ,  MA, Shawming ,  NAGORNY, Vladimir ,  PAKULSKI, Ryan M.

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32724 ,  H01J2237/32 ,  H01L21/67248

Abstract: Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a processing chamber. The processing chamber can be separated from the plasma chamber. The apparatus can include a separation grid. The separation grid can separate the plasma chamber and the processing chamber. The apparatus can include a temperature control system. The temperature control system can be configured to regulate the temperature of the separation grid to affect a uniformity of a plasma process on a substrate. In some embodiments, a separation grid can have a varying thickness profile across a cross-section of the separation grid to affect a flow of neutral species through the separation grid.

Abstract translation: 提供了等离子体处理设备的分离栅格。 在一些实施例中，等离子体处理设备包括等离子体室。 等离子体处理装置包括处理室。 处理室可以与等离子体室分离。 该设备可以包括分离网格。 分离栅格可以分离等离子体室和处理室。 该设备可以包括温度控制系统。 温度控制系统可以被配置为调节分离栅格的温度以影响衬底上的等离子体处理的均匀性。 在一些实施方式中，分离格栅可以在分离格栅的横截面上具有变化的厚度分布，以影响通过分离格栅的中性物质的流动。

公开(公告)号：WO2014182981A1

公开(公告)日：2014-11-13

申请号：PCT/US2014/037415

申请日：2014-05-09

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： NAGORNY, Vladimir ,  PARK, Steven ,  ZUCKER, Martin

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32513 ,  H01J37/321 ,  H01J37/32522 ,  H01J2237/166

Abstract: Systems and methods for protecting vacuum seals in a plasma processing system are provided. The plasma processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal.

Abstract translation: 提供了一种在等离子体处理系统中保护真空密封的系统和方法。 等离子体处理系统可以包括限定侧壁的真空室和缠绕在侧壁的至少一部分上的感应线圈。 真空密封件可以位于真空室的侧壁和散热器之间。 导热桥可以耦合在侧壁和散热器之间。 此外，导热桥可以相对于真空密封件定位，使得导热桥将导向热路径从侧壁或任何热源重定向到散热器，使得热路径绕过真空密封。

公开(公告)号：WO2013028313A1

公开(公告)日：2013-02-28

申请号：PCT/US2012/048790

申请日：2012-07-30

Applicant: MATTSON TECHNOLOGY, INC. ,  NAGORNY, Vladimir ,  CRAPUCHETTES, Charles

Inventor： NAGORNY, Vladimir ,  CRAPUCHETTES, Charles

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.

Abstract translation: 公开了一种等离子体反应器和用于干燥带状等离子体处理的用于感应等离子体源的改进气体注入的方法。 根据本公开的实施例，气体通过位于等离子体室的侧壁而不是从中心附近的气体注入通道进入等离子体室，使得处理气体以接近的方式进入等离子体室 到感应线圈。 在特定实施例中，进入腔室的工艺气体被迫通过与感应线圈相邻的反应性体积或有源区域，其中发生电子的有效加热，从而通过改善工艺气体流量和限制加热区域来提高反应器的效率 。

公开(公告)号：WO2012082854A2

公开(公告)日：2012-06-21

申请号：PCT/US2011/064832

申请日：2011-12-14

Applicant: MATTSON TECHNOLOGY, INC. ,  NAGORNY, Vladimir ,  LEE, Dongsoo ,  KADAVANICH, Andreas

Inventor： NAGORNY, Vladimir ,  LEE, Dongsoo ,  KADAVANICH, Andreas

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

Abstract translation: 公开了等离子体处理装置和方法。 本公开的实施例包括具有可操作以接收处理气体的内部空间的处理腔室，可操作以保持基板的处理腔室内部的基板保持件，以及至少一个介电窗口。 金属屏蔽被设置在电介质窗口附近。 金属屏蔽可以具有周边部分和中心部分。 处理装置包括设置在处理室外部邻近金属屏蔽的周边部分的初级感应元件。 处理装置可以进一步包括设置在金属屏蔽的中央部分和介电窗口之间的次级感应元件。 初级和次级电感元件可以执行不同的功能，可以具有不同的结构配置，并且可以在不同的频率下工作。

公开(公告)号：WO2018226276A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/020107

申请日：2018-02-28

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： MA, Shawming ,  NAGORNY, Vladimir ,  DESAI, Dixit V. ,  PAKULSKI, Ryan M.

IPC: H01J37/32

Abstract: Plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a pedestal operable to support a workpiece in the processing chamber. The apparatus includes a plasma chamber. The plasma chamber defines an active plasma generation region along a vertical surface of a dielectric sidewall of the plasma chamber. The apparatus includes a separation grid positioned between the processing chamber and the plasma chamber along a vertical direction. The apparatus includes a plurality of induction coils extending about the plasma chamber. Each of the plurality of induction coils can be disposed at a different position along the vertical direction. Each of the plurality of induction coils can be operable to generate a plasma in the active plasma generation region along the vertical surface of the dielectric sidewall of the plasma chamber.

公开(公告)号：WO2011022612A2

公开(公告)日：2011-02-24

申请号：PCT/US2010/046110

申请日：2010-08-20

Applicant: MATTSON TECHNOLOGY, INC. ,  GODYAK, Valery, A. ,  CRAPUCHETTES, Charles ,  NAGORNY, Vladimir

Inventor： GODYAK, Valery, A. ,  CRAPUCHETTES, Charles ,  NAGORNY, Vladimir

IPC: H05H1/34 ,  H05H1/40

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32651 ,  H05H1/46 ,  H05H2001/4652

Abstract: Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.

Abstract translation: 公开了提供有效和可缩放的RF感应等离子体处理的方法和装置。 在一些方面，电感RF能量施加器和等离子体之间的耦合和/或来自施加器的功率传递的空间定义大大增强。 所公开的方法和装置由此实现高电效率，减少寄生电容耦合和/或增强处理均匀性。 各种实施例包括具有由壁界定的处理室的等离子体处理装置，设置在处理室中的衬底保持器以及在室的壁外部的感应RF能量施加器。 感应RF能量施加器包括一个或多个射频感应耦合元件（ICE）。 每个电感耦合元件具有紧密靠近施加器壁上的薄介电窗口的磁集中器。

公开(公告)号：WO2018226275A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/020103

申请日：2018-02-28

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： MA, Shawming ,  NAGORNY, Vladimir ,  DESAI, Dixit V. ,  PAKULSKI, Ryan M.

IPC: H01J37/32

Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a first pedestal in the processing chamber operable to support a workpiece. The first pedestal can define a first processing station. The plasma processing apparatus can include a second pedestal in the processing chamber operable to support a workpiece. The second pedestal can define a second processing station. The apparatus can include a first plasma chamber disposed above the first processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The apparatus can include a second plasma chamber disposed above the second processing station. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.