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    BLUE-GREEN LASER DIODE
    1.
    发明申请
    BLUE-GREEN LASER DIODE 审中-公开
    蓝绿色激光二极管

    公开(公告)号：WO1992021170A2

    公开(公告)日：1992-11-26

    申请号：PCT/US1992003782

    申请日：1992-05-12

    Applicant: MINNESOTA MINING AND MANUFACTURING COMPANY

    Inventor： MINNESOTA MINING AND MANUFACTURING COMPANY ,  HAASE, Michael, A. ,  CHENG, Hwa ,  DEPUYDT, James, M. ,  QIU, Jun

    IPC: H01S03/19

    CPC classification number: H01L33/40 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/145 ,  H01L33/28 ,  H01L33/285 ,  H01L33/38 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2213 ,  H01S5/2231 ,  H01S5/3059 ,  H01S5/3068 ,  H01S5/327 ,  H01S5/3403 ,  H01S5/347 ,  H01L2924/00

    Abstract: A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 10 cm , and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

    Abstract translation: II-VI化合物半导体激光二极管（10）由包括n型单晶半导体衬底（12），相邻的n型和p型引导激光器（14）和II的（16）的材料的重叠层形成 形成pn结的-VI半导体，在引导层（14）和（16）之间的II-VI半导体的量子阱有源层（18），与衬底（12）相对的第n电极（32）与n型引导 层（14）和与量子阱层（18）相对的p型引导层（16）的第二电极（30）。 电极层（30）的特征在于费米能量。 掺杂p型欧姆接触层（26），具有浅受主能量的浅受主至至少1×10 17 cm -3的净受体浓度，并且包括足够的深能态 浅受主能量和电极层费米能量，以实现电荷载体的级联隧穿。

    GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE II-VI SEMICONDUCTORS
    4.
    发明申请
    GRADED COMPOSITION OHMIC CONTACT FOR P-TYPE II-VI SEMICONDUCTORS 审中-公开
    用于P型II-VI半导体的分级组合物OHMIC接触

    公开(公告)号：WO1994018709A1

    公开(公告)日：1994-08-18

    申请号：PCT/US1994000571

    申请日：1994-01-18

    Applicant: MINNESOTA MINING AND MANUFACTURING COMPANY

    Inventor： MINNESOTA MINING AND MANUFACTURING COMPANY ,  QIU, Jun ,  DePUYDT, James, M. ,  CHENG, Hwa ,  HAASE, Michael, A.

    IPC: H01L33/00

    CPC classification number: H01L33/40 ,  B82Y20/00 ,  H01L29/45 ,  H01L33/0087 ,  H01L33/145 ,  H01L33/28 ,  H01L33/285 ,  H01L33/38 ,  H01L2933/0016 ,  H01S5/0421 ,  H01S5/2211 ,  H01S5/2231 ,  H01S5/3059 ,  H01S5/3068 ,  H01S5/327 ,  H01S5/3403 ,  H01S5/347

    Abstract: A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, and electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound including ZnTe. The relative amount of ZnTe in the semiconductor compound increases with increasing distance of the ohmic contact layer from the device layer. In a first embodiment the ohmic contact layer comprises a graded composition semiconductor alloy including the semiconductor compound of the device layer and ZnTe. The amount of ZnTe in the alloy increases with increasing distance of the ohmic contact layer from the device layer in the first embodiment. In a second embodiment the ohmic contact layer includes layers of ZnTe spaced between layers of the semiconductor compound of the device layer. The thickness of the layers of ZnTe increases, or the thickness of the layers of the semiconductor compound of the device layer decreases, with increasing distance of the ohmic contact layer from the device layer in the second embodiment.

    Abstract translation: 包括衬底，p型II-VI半导体的器件层以及电极和电极与器件层之间的欧姆接触层的II-VI激光二极管。 欧姆接触层包括包含ZnTe的梯度组成半导体化合物。 半导体化合物中的ZnTe的相对量随着欧姆接触层与器件层的距离的增加而增加。 在第一实施例中，欧姆接触层包括包括器件层的半导体化合物和ZnTe的渐变组成半导体合金。 在第一实施例中，合金中的ZnTe的量随着欧姆接触层与器件层的距离的增加而增加。 在第二实施例中，欧姆接触层包括在器件层的半导体化合物的层间隔开的ZnTe层。 随着第二实施例中欧姆接触层与器件层的距离增加，ZnTe层的厚度增加，或者器件层的半导体化合物的层的厚度减小。

    SINGLE QUANTUM WELL II-VI LASER DIODE WITHOUT CLADDING
    5.
    发明申请
    SINGLE QUANTUM WELL II-VI LASER DIODE WITHOUT CLADDING 审中-公开
    单数量子II-VI激光二极管没有封装

    公开(公告)号：WO1993024980A1

    公开(公告)日：1993-12-09

    申请号：PCT/US1993004670

    申请日：1993-05-14

    Applicant: MINNESOTA MINING AND MANUFACTURING COMPANY

    Inventor： MINNESOTA MINING AND MANUFACTURING COMPANY ,  CHENG, Hwa ,  DEPUYDT, James, M. ,  HAASE, Michael, A. ,  QIU, Jun

    IPC: H01S03/19

    CPC classification number: B82Y20/00 ,  H01L33/0087 ,  H01L2924/0002 ,  H01S5/3403 ,  H01S5/342 ,  H01S5/347 ,  H01L2924/00

    Abstract: A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers (14, 16) of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer (12) is positioned between the guiding layers. An Au electrode (24) overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.

    Abstract translation: 没有半导体包层的单个量子阱II-VI激光二极管包括通过在n型GaAs衬底上覆盖p型和n型ZnSe的导光层（14,16）而形成的pn结。 CdSe / ZnSe短周期应变层超晶格单量子阱活性层（12）位于引导层之间。 Au电极（24）覆盖与单量子阱活性层相对的p型引导层。 引导层具有使基板和Au电极能够将由器件产生的光束限制在有源层和引导层内的厚度。

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