公开(公告)号：WO2009116715A1

公开(公告)日：2009-09-24

申请号：PCT/KR2008/006190

申请日：2008-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YU, Donghun ,  CHO, Kyoung Lae ,  KANG, Dongku ,  CHAE, Dong Hyuk ,  KONG, Jun Jin

IPC: G11C16/34

CPC classification number: G11C16/26 ,  G06F11/1072 ,  G11C11/5628 ,  G11C11/5642 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2211/5621

Abstract: Disclosed are a memory device and a memory data reading method. The memory device may include a multi-bit cell array, a threshold voltage detecting unit configured to detect first threshold voltage intervals including threshold voltages of multi-bit cells of the multi-bit cell array from among a plurality of threshold voltage intervals, a determination unit configured to determine data of a first bit layer based on the detected first threshold voltage intervals, and an error detection unit configured to detect an error bit of the data of the first bit layer. In this instance, the determination unit may determine data of a second bit layer using a second threshold voltage interval having a value of the first bit layer different from the detected error bit and being nearest to a threshold voltage of a multi-bit cell corresponding to the detected error bit.

Abstract translation: 公开了一种存储器件和存储器数据读取方法。 存储器件可以包括多位单元阵列，阈值电压检测单元，被配置为从多个阈值电压间隔中检测包括多位单元阵列的多位单元的阈值电压的第一阈值电压间隔， 单元，被配置为基于检测到的第一阈值电压间隔来确定第一位层的数据;以及错误检测单元，被配置为检测第一位层的数据的错误位。 在这种情况下，确定单元可以使用具有与检测到的错误位不同的第一位层的值的第二阈值电压间隔来确定第二位层的数据，并且最接近对应于多个位单元的阈值电压 检测到错误位。

公开(公告)号：WO2009104855A1

公开(公告)日：2009-08-27

申请号：PCT/KR2008/006187

申请日：2008-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SONG, Seung-Hwan ,  EUN, Heeseok ,  YU, Donghun ,  KONG, Jun Jin

IPC: G11C16/04

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C29/00

Abstract: Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.

Abstract translation: 提供的是存储器件和存储器数据读取方法。 方法设备可以包括：多比特单元阵列; 判定单元，其可以使用第一判定值来检测所述多比特单元阵列的多比特单元的阈值电压以从所述检测到的阈值电压中确定第一数据; 可以检测第一数据的错误位的错误检测器; 以及确定单元，其可以基于检测到的错误位的数量来确定判定单元是否使用第二判定值从检测到的阈值电压确定第二数据，第二判定值与第一判定值不同。 通过这种方式，可以减少读取存储在多位单元中的数据所花费的时间。

公开(公告)号：WO2014129787A1

公开(公告)日：2014-08-28

申请号：PCT/KR2014/001322

申请日：2014-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YU, Donghun ,  KIM, Woogeun ,  JEONG, Hyesoon ,  PARK, Chulhui ,  HONG, Sunyeal

IPC: G06F3/03 ,  G06F3/041 ,  G06F3/02

CPC classification number: G06F3/0412 ,  G06F3/023 ,  G06F3/0488

Abstract: A method and electronic device are provided to process a touch screen event detected from a touch screen and to process an input key event detected from an input key. The input key may be installed near the touch screen panel. The method comprises detecting a first event comprising one of an input key event from the input key of the electronic device and a touch screen event from the touch screen and detecting a second event within a given time after the detection of the first event, the second event comprising the other of an input key event from the input key of the electronic device and a touch screen event from the touch screen. The method further comprises performing a function corresponding to the touch screen event while ignoring the input key event.

Abstract translation: 提供一种方法和电子设备来处理从触摸屏检测到的触摸屏事件并处理从输入键检测到的输入键事件。 输入键可以安装在触摸屏面板附近。 该方法包括检测包括来自电子设备的输入键的输入键事件和来自触摸屏的触摸屏事件之一的第一事件，并且在检测到第一事件之后的给定时间内检测第二事件，第二事件 事件包括来自电子设备的输入键的输入键事件和来自触摸屏的触摸屏事件的另一个。 该方法还包括在忽略输入的键事件的同时执行与触摸屏事件相对应的功能。

公开(公告)号：WO2009102100A1

公开(公告)日：2009-08-20

申请号：PCT/KR2008/004969

申请日：2008-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHO, Kyoung Lae ,  YU, Donghun ,  CHAE, Dong Hyuk ,  KONG, Jun Jin ,  KIM, Jae Hong ,  SONG, Seung-Hwan

IPC: G11C16/34

CPC classification number: G11C7/1006 ,  G11C7/14 ,  G11C11/5642 ,  G11C29/00 ,  G11C29/028 ,  G11C29/42 ,  G11C29/50 ,  G11C2211/5634

Abstract: Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.

Abstract translation: 示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。 示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据 比较结果，用于验证在所确定的值中是否发生错误的错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据 确定器，以基于所确定的第二参考电压重新确定数据的值。