公开(公告)号：WO2008083140A2

公开(公告)日：2008-07-10

申请号：PCT/US2007/088792

申请日：2007-12-26

Applicant: SEMI-PHOTONICS CO., LTD. ,  TRAN, Chuong, Anh ,  DOAN, Trung, Tri ,  CHU, Chen-Fu ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu

Inventor： TRAN, Chuong, Anh ,  DOAN, Trung, Tri ,  CHU, Chen-Fu ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu

IPC: H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: Systems and methods are disclosed for fabricating a semiconductor light- emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract translation: 公开了通过在LED器件上形成n掺杂的氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：WO2008151255A1

公开(公告)日：2008-12-11

申请号：PCT/US2008/065819

申请日：2008-06-04

Applicant: SEMI-PHOTONICS CO., LTD. ,  DOAN, Trung Tri ,  CHU, Chen-Fu

Inventor： DOAN, Trung Tri ,  CHU, Chen-Fu

IPC: H01L21/00

CPC classification number: H01L33/0079

Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Abstract translation: 用于制造发光二极管的系统和方法包括在载体衬底上形成多层外延结构; 在所述多层外延结构上沉积至少一个金属层; 去除载体衬底。

公开(公告)号：WO2008154526A2

公开(公告)日：2008-12-18

申请号：PCT/US2008/066378

申请日：2008-06-10

Applicant: SEMI-PHOTONICS CO., LTD. ,  CHU, Chen-Fu ,  LIU, Wen-Huang ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  DOAN, Trung, Tri

Inventor： CHU, Chen-Fu ,  LIU, Wen-Huang ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  DOAN, Trung, Tri

IPC: H01L21/00 ,  H01L31/00 ,  H01L33/00

CPC classification number: H01L33/0079

Abstract: Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

Abstract translation: 提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。 可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。 这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

公开(公告)号：WO2008045886A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/080836

申请日：2007-10-09

Applicant: SEMI-PHOTONICS CO., LTD. ,  FAN, Feng-Hsu ,  DOAN, Trung Tri ,  TRAN, Chuong Anh ,  CHU, Chen-Fu ,  CHENG, Chao-Chen ,  CHU, Jiunn-Yi ,  LIU, Wen-Huang ,  CHENG, Hao-Chun ,  YEN, Jui-Kang

Inventor： FAN, Feng-Hsu ,  DOAN, Trung Tri ,  TRAN, Chuong Anh ,  CHU, Chen-Fu ,  CHENG, Chao-Chen ,  CHU, Jiunn-Yi ,  LIU, Wen-Huang ,  CHENG, Hao-Chun ,  YEN, Jui-Kang

IPC: H01L29/06

CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：WO2008019377A2

公开(公告)日：2008-02-14

申请号：PCT/US2007/075402

申请日：2007-08-07

Applicant: SEMI-PHOTONICS CO., LTD. ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHU, Chen-Fu ,  DOAN, Trung Tri

Inventor： CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHU, Chen-Fu ,  DOAN, Trung Tri

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

Abstract translation: 描述了在半导体制造期间分离多个裸片的方法。 在包含多个裸片的半导体晶片的上表面上，可使用种子金属层来在其上方生长用于处理的硬金属层。 除了停止电镀（EP）材料块存在的地方以外，金属可以镀在这些金属层上方的任何地方。 停止EP材料可以被消除，并且可以在整个剩余结构上方形成阻挡层。 衬底可以被移除，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割和加热后的浸没硬金属应足够坚固以便处理。 磁带可能被添加到晶片，并且可以使用断路器将模具分开。 所得到的结构可以被翻转过来，并且磁带可以被扩展以分离各个裸片。

公开(公告)号：WO2007117805A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/063589

申请日：2007-03-08

Applicant: SEMILEDS CORPORATION ,  CHU, Chen-Fu ,  DOAN, Trung, Tri ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  WANG, Fu-Hsien

Inventor： CHU, Chen-Fu ,  DOAN, Trung, Tri ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  WANG, Fu-Hsien

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/0095

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​到处。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何所需的焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，将钝化层添加到该表面，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得到的结构翻转，并且将带扩展以分离各个模具。

公开(公告)号：WO2008154573A1

公开(公告)日：2008-12-18

申请号：PCT/US2008/066539

申请日：2008-06-11

Applicant: SEMILEDS CORPORATION ,  LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

Inventor： LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

IPC: H01L29/207

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：WO2017202331A1

公开(公告)日：2017-11-30

申请号：PCT/CN2017/085664

申请日：2017-05-24

Applicant: CHU, Chen-Fu

Inventor： CHU, Chen-Fu

IPC: H01L33/52

Abstract: A method to fill the flowable material into the semiconductor assembly module gap regions is described. In an embodiment, multiple semiconductor units are formed on the substrate to create an array module; the array module is attached to a backplane having circuitry to form the semiconductor assembly module in which multiple gap regions are formed inside the semiconductor assembly module and edge gap regions are formed surround an edge of the assembly module. The flowable material is forced inside the gap regions by performing the high acting pressure environment and then cured to be a stable solid to form a robustness structure. A semiconductor convert module is formed by removing the substrate utilizing a substrate removal process. A semiconductor driving module is formed by utilizing a connecting layer on the semiconductor convert module. In one embodiment, a vertical light emitting diode semiconductor driving module is formed to light up the vertical LED array. In another one embodiment, multiple color emissive light emitting diodes semiconductor driving module is formed to display color images. In another embodiment, multiple patterns of semiconductor units having multiple functions semiconductor driving module is formed to provide multiple functions for desire application.

Abstract translation: 描述了将可流动材料填充到半导体组件模块间隙区域中的方法。 在一个实施例中，在衬底上形成多个半导体单元以形成阵列模块; 阵列模块附接到具有用于形成半导体组件模块的电路的背板，其中在半导体组件模块内部形成多个间隙区域，并且围绕组件模块的边缘形成边缘间隙区域。 通过执行高作用压力环境将可流动材料压入间隙区域内，然后固化成稳定的固体以形成坚固结构。 通过利用基板去除工艺去除基板来形成半导体转换模块。 半导体驱动模块利用半导体转换模块上的连接层形成。 在一个实施例中，形成垂直发光二极管半导体驱动模块以点亮垂直LED阵列。 在另一个实施例中，形成多个发光颜色发光二极管半导体驱动模块以显示彩色图像。 在另一个实施例中，形成具有多个功能半导体驱动模块的多个半导体单元图案以提供用于期望应用的多个功能。

公开(公告)号：WO2012171331A1

公开(公告)日：2012-12-20

申请号：PCT/CN2012/000820

申请日：2012-06-14

Applicant: SEMILEDS OPTOELECTRONICS CO.,LTD ,  LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

Inventor： LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

IPC: H01L27/15 ,  H01L29/00

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) comprises: a metal substrate(201); an LED stack for emitting light disposed above the metal substrate(201), wherein the LED stack provides a first current path for the LED; and a second current path(402) for the LED different from the first current path. The LED stack comprises a p-type semiconductor layer(110) and an n-type semiconductor layer(106) disposed above the p-type semiconductor layer(110). The LED may have the advantages of current guiding and transient suppression.

Abstract translation: 发光二极管（LED）包括：金属基板（201）; 用于发射设置在所述金属基板（201）上方的光的LED堆叠，其中所述LED堆叠为所述LED提供第一电流路径; 以及用于不同于第一电流路径的LED的第二电流路径（402）。 LED堆叠包括p型半导体层（110）和设置在p型半导体层（110）上方的n型半导体层（106）。 LED可能具有电流引导和瞬态抑制的优点。