公开(公告)号：WO2018020350A1

公开(公告)日：2018-02-01

申请号：PCT/IB2017/054229

申请日：2017-07-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： YAMANE, Yasumasa ,  KURATA, Motomu ,  HODO, Ryota ,  ISHIYAMA, Takahisa

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: A semiconductor device having stable electrical characteristics is provided. Alternatively, a highly reliable semiconductor device suitable for miniaturization or high integration is provided. The semiconductor device includes a first barrier layer, a second barrier layer, a third barrier layer, a transistor including an oxide, an insulator, and a conductor. The insulator includes an oxygen-excess region. The insulator and the oxide are between the first barrier layer and the second barrier layer. The conductor is in an opening of the first barrier layer, an opening of the second barrier layer, and an opening of the insulator with the third barrier layer positioned therebetween.

Abstract translation: 提供具有稳定电特性的半导体器件。 或者，提供适用于小型化或高集成度的高度可靠的半导体器件。 该半导体器件包括第一阻挡层，第二阻挡层，第三阻挡层，包括氧化物的晶体管，绝缘体和导体。 绝缘体包括氧过量区域。 绝缘体和氧化物位于第一阻挡层和第二阻挡层之间。 导体位于第一阻挡层的开口，第二阻挡层的开口以及绝缘体的开口中，第三阻挡层位于第一阻挡层和第二阻挡层之间。