公开(公告)号：WO2016094580A1

公开(公告)日：2016-06-16

申请号：PCT/US2015/064830

申请日：2015-12-09

Applicant: UNIVERSITY OF SOUTHERN CALIFORNIA

Inventor： ZHOU, Chongwu ,  CAO, Xuan ,  CHEN, Haitian ,  LIU, Bilu ,  CAO, Yu ,  GU, Xiaofei ,  WANG, Wenli ,  WU, Fanqi

IPC: H01L27/11

CPC classification number: H01L51/0022 ,  B82Y10/00 ,  H01L27/3274 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0048 ,  H01L51/0097 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0558 ,  H01L51/102 ,  H01L51/105 ,  H01L51/56

Abstract: A method of fabricating a thin film transistor, the method includes applying a first ink containing metallic particles to a first screen mask, and using the first screen mask to deposit the first ink to form a source electrode and a drain electrode on a substrate bearing a layer of carbon nanotubes (CNT). The method includes applying a second ink containing a dielectric material to a second screen mask, and using the second screen mask to deposit the second ink to form a layer of the dielectric material on the layer of CNT between the source electrode and the drain electrode. The method includes applying a third ink containing metallic particles to a third screen mask, and using the third screen mask to deposit the first ink to form a metallic gate electrode on the layer of the dielectric material to form the thin film transistor.

Abstract translation: 一种制造薄膜晶体管的方法，该方法包括将含有金属颗粒的第一油墨施加到第一筛网掩模上，并且使用第一筛网掩模沉积第一油墨以在承载有第一油墨的基板上形成源电极和漏电极 碳纳米管层（CNT）。 该方法包括将包含电介质材料的第二墨水施加到第二屏蔽掩模，并且使用第二屏蔽掩模沉积第二墨水以在源电极和漏电极之间的CNT层上形成电介质材料层。 该方法包括将第三油墨含有金属颗粒施加到第三筛网掩模，并且使用第三筛网掩模沉积第一油墨以在介电材料层上形成金属栅电极以形成薄膜晶体管。