SCREEN PRINTING SYSTEMS AND TECHNIQUES FOR CREATING THIN-FILM TRANSISTORS USING SEPARATED CARBON NANOTUBES
    1.
    发明申请
    SCREEN PRINTING SYSTEMS AND TECHNIQUES FOR CREATING THIN-FILM TRANSISTORS USING SEPARATED CARBON NANOTUBES 审中-公开
    使用分离碳纳米管制造薄膜晶体管的屏幕打印系统和技术

    公开(公告)号:WO2016094580A1

    公开(公告)日:2016-06-16

    申请号:PCT/US2015/064830

    申请日:2015-12-09

    Abstract: A method of fabricating a thin film transistor, the method includes applying a first ink containing metallic particles to a first screen mask, and using the first screen mask to deposit the first ink to form a source electrode and a drain electrode on a substrate bearing a layer of carbon nanotubes (CNT). The method includes applying a second ink containing a dielectric material to a second screen mask, and using the second screen mask to deposit the second ink to form a layer of the dielectric material on the layer of CNT between the source electrode and the drain electrode. The method includes applying a third ink containing metallic particles to a third screen mask, and using the third screen mask to deposit the first ink to form a metallic gate electrode on the layer of the dielectric material to form the thin film transistor.

    Abstract translation: 一种制造薄膜晶体管的方法,该方法包括将含有金属颗粒的第一油墨施加到第一筛网掩模上,并且使用第一筛网掩模沉积第一油墨以在承载有第一油墨的基板上形成源电极和漏电极 碳纳米管层(CNT)。 该方法包括将包含电介质材料的第二墨水施加到第二屏蔽掩模,并且使用第二屏蔽掩模沉积第二墨水以在源电极和漏电极之间的CNT层上形成电介质材料层。 该方法包括将第三油墨含有金属颗粒施加到第三筛网掩模,并且使用第三筛网掩模沉积第一油墨以在介电材料层上形成金属栅电极以形成薄膜晶体管。

    FABRICATION OF SILICON NANOWIRES
    3.
    发明申请
    FABRICATION OF SILICON NANOWIRES 审中-公开
    硅纳米线的制造

    公开(公告)号:WO2011137446A2

    公开(公告)日:2011-11-03

    申请号:PCT/US2011/034817

    申请日:2011-05-02

    Abstract: Nanowires are formed in a process including fluidized bed catalytic vapor deposition. The process may include contacting a gas-phase precursor including a metal or a semiconductor with a catalyst in a reaction chamber under conditions suitable for growth of nanowires including the metal or the semiconductor. The reaction chamber includes a support. The support can be, for example, a particulate support or a product vessel in the fluidized bed reactor. Nanowires are formed on the support in response to interaction between the gas-phase precursor and the catalyst. The nanowire-laden support is removed from the reaction chamber, and the nanowires are separated from the support. An anode or a lithium-ion battery may include nanowires formed in a fluidized bed reactor.

    Abstract translation: 在包括流化床催化气相沉积的方法中形成纳米线。 该方法可以包括在适合于包括金属或半导体的纳米线的生长的条件下,在反应室中将含有金属或半导体的气相前体与催化剂接触。 反应室包括支撑件。 载体可以是例如流化床反应器中的颗粒载体或产物容器。 响应于气相前体和催化剂之间的相互作用,在载体上形成纳米线。 将载有纳米线的载体从反应室中除去,并将纳米线与载体分离。 阳极或锂离子电池可以包括在流化床反应器中形成的纳米线。

    NANOSTRUCTURED THIN-FILM ELECTROCHEMICAL CAPACITORS
    4.
    发明申请
    NANOSTRUCTURED THIN-FILM ELECTROCHEMICAL CAPACITORS 审中-公开
    纳米结构薄膜电化学电容器

    公开(公告)号:WO2011137404A2

    公开(公告)日:2011-11-03

    申请号:PCT/US2011/034691

    申请日:2011-04-29

    Abstract: An asymmetric electrochemical capacitor including an anode, a cathode, and an electrolyte between the anode and the cathode. The anode includes manganese dioxide (MnO 2 ) nanowires and single-walled carbon nanotubes. The cathode includes indium oxide (In 2 O 3 ) nanowires and single-walled carbon nanotubes. The asymmetrical electrochemical capacitor can be fabricated by forming a first film including manganese dioxide nanowires and single-walled carbon nanotubes, forming a second film including indium oxide nanowires and single-walled carbon nanotubes, and providing an electrolyte between the first film and the second film such that the electrolyte is in contact with the first film and the second film.

    Abstract translation: 在阳极和阴极之间包括阳极,阴极和电解质的不对称电化学电容器。 阳极包括二氧化锰(MnO 2)纳米线和单壁碳纳米管。 阴极包括氧化铟(In 2 O 3)纳米线和单壁碳纳米管。 可以通过形成包括二氧化锰纳米线和单壁碳纳米管的第一膜,形成包括氧化铟纳米线和单壁碳纳米管的第二膜,并且在第一膜和第二膜之间提供电解质来制造不对称电化学电容器 使得电解质与第一膜和第二膜接触。

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