公开(公告)号：WO2010132660A3

公开(公告)日：2010-11-18

申请号：PCT/US2010/034705

申请日：2010-05-13

Applicant: VEECO INSTRUMENTS INC. ,  SFERLAZZO, Piero ,  KLEIN, Martin

Inventor： SFERLAZZO, Piero ,  KLEIN, Martin

IPC: D06B1/02 ,  D06J1/00

Abstract: A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate.

公开(公告)号：WO2010144302A2

公开(公告)日：2010-12-16

申请号：PCT/US2010/037331

申请日：2010-06-03

Applicant: VEECO INSTRUMENTS INC. ,  ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

Inventor： ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

IPC: H01L21/205 ,  C23C16/54

CPC classification number: C23C16/545 ,  C23C16/45502 ,  C30B25/14

Abstract: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

Abstract translation: 卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。 沉积室限定了通过所述纤维网通过的通道，同时被所述至少两个辊输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

公开(公告)号：WO2010144303A2

公开(公告)日：2010-12-16

申请号：PCT/US2010/037335

申请日：2010-06-03

Applicant: VEECO INSTRUMENTS INC. ,  ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

Inventor： ARMOUR, Eric A. ,  QUINN, William E. ,  SFERLAZZO, Piero

IPC: H01L21/205

CPC classification number: C23C16/54 ,  C23C16/4582 ,  C30B25/025 ,  C30B35/00

Abstract: A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.

Abstract translation: 连续进料CVD系统包括在CVD处理期间通过沉积室输送晶片的晶片输送机构。 淀积室限定一个通道，用于晶片通过，同时由晶片输送机构输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

公开(公告)号：WO2010101756A2

公开(公告)日：2010-09-10

申请号：PCT/US2010/025326

申请日：2010-02-25

Applicant: VEECO INSTRUMENTS INC. ,  SFERLAZZO, Piero

Inventor： SFERLAZZO, Piero

IPC: H01L21/205

CPC classification number: C23C16/545 ,  C23C16/45551 ,  C23C16/46

Abstract: A web substrate atomic layer deposition system includes at least one roller that transports a surface of a web substrate through a plurality of processing chambers. The plurality of processing chambers includes a first precursor reaction chamber that exposes the surface of the web substrate to a desired partial pressure of first precursor gas, thereby forming a first layer on the surface of the web substrate. A purging chamber purges the surface of the web substrate with a purge gas. A vacuum chamber removes gas from the surface of the substrate. A second precursor reaction chamber exposes the surface of the web substrate to a desired partial pressure of the second precursor gas, thereby forming a second layer on the surface of the web substrate.

Abstract translation: 网状基材原子层沉积系统包括至少一个辊，其通过多个处理室传送幅材基材的表面。 多个处理室包括第一前体反应室，其将幅材基材的表面暴露于期望的第一前体气体的分压，从而在幅材基材的表面上形成第一层。 净化室用净化气体清洗幅材基材的表面。 真空室从基板的表面去除气体。 第二前体反应室将幅材基材的表面暴露于第二前体气体的期望分压，从而在幅材基材的表面上形成第二层。

公开(公告)号：WO2009009121A1

公开(公告)日：2009-01-15

申请号：PCT/US2008/008507

申请日：2008-07-09

Applicant: VEECO INSTRUMENTS INC. ,  SFERLAZZO, Piero ,  GURARY, Alexander, I. ,  ARMOUR, Eric, A. ,  QUINN, William, E. ,  TING, Steve

Inventor： SFERLAZZO, Piero ,  GURARY, Alexander, I. ,  ARMOUR, Eric, A. ,  QUINN, William, E. ,  TING, Steve

IPC: C23C16/00

CPC classification number: C23C16/45589

Abstract: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates (138) are rotated on a carrier (104) about an axis (106) while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets (170). A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector (108), and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

Abstract translation: 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底（138）围绕轴线（106）在载体（104）上旋转，同时保持 所述一个或多个基板基本上垂直于旋转轴线并且沿着旋转轴线沿上游方向面对。 在旋转期间，第一气体沿着下游方向从第一组气体入口（170）朝向一个或多个基板排出。 第二气体沿着下游方向从至少一个可移动气体喷射器（108）朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量移动或朝向 旋转轴。

公开(公告)号：WO2007106732A1

公开(公告)日：2007-09-20

申请号：PCT/US2007/063655

申请日：2007-03-09

Applicant: VEECO INSTRUMENTS, INC. ,  SFERLAZZO, Piero ,  MAO, Ming ,  CHEN, Jinliang ,  FELSENTHAL, David ,  HIERONYMI, Robert, Gabriel ,  EROR, Miroslav

Inventor： SFERLAZZO, Piero ,  MAO, Ming ,  CHEN, Jinliang ,  FELSENTHAL, David ,  HIERONYMI, Robert, Gabriel ,  EROR, Miroslav

IPC: C23C14/50 ,  C23C14/35

CPC classification number: C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

Abstract: The present invention relates to a sputter deposition system 10 and to methods of use thereof for processing substrates 12 using planetary sputter deposition methods. The sputter deposition system 10 includes a deposition chamber 14 having an azimuthal axis 16. A rotatable member 30 and 32 is situated in the chamber 14 and includes a plurality of magnetrons 34 provided thereon. Each magnetron 34 includes a corresponding one of a plurality of sputtering targets 36. The rotatable member 30, 32 is configured to position each of the magnetrons 34 to direct sputtered material from the corresponding one of the sputtering targets 36 to a deposition zone 50 defined in the deposition chamber 14. A transport mechanism 66 is situated in the deposition chamber 14 and includes an arm 68 rotatable about the azimuthal axis 16. A substrate holder 72 is attached to the arm 68 of the transport mechanism 66 and supports the substrate 12 as the arm 68 rotates the substrate holder 72 to intersect the deposition zone 50 for depositing sputtered material on the substrate 12.

Abstract translation: 本发明涉及一种溅射沉积系统10及其使用方法，用于使用行星式溅射沉积方法处理衬底12。 溅射沉积系统10包括具有方位轴线16的沉积室14.可旋转构件30和32位于室14中，并且包括设置在其上的多个磁控管34。 每个磁控管34包括多个溅射靶36中的对应的一个。可旋转构件30,32构造成定位每个磁控管34以将溅射材料从相应的一个溅射靶36引导到沉积区50 输送机构66位于沉积室14中，并且包括可围绕方位轴线16旋转的臂68.基板保持器72附接到输送机构66的臂68并且将基板12作为 臂68使衬底保持器72旋转以与沉积区50相交，以将溅射的材料沉积在衬底12上。

公开(公告)号：WO2009039261A1

公开(公告)日：2009-03-26

申请号：PCT/US2008/076835

申请日：2008-09-18

Applicant: VEECO INSTRUMENTS INC. ,  DRUZ, Boris ,  FREMGEN, Roger, P., Jr. ,  HAYES, Alan, V. ,  KANAROV, Viktor ,  KRAUSE, Robert ,  REISS, Ira ,  SFERLAZZO, Piero

Inventor： DRUZ, Boris ,  FREMGEN, Roger, P., Jr. ,  HAYES, Alan, V. ,  KANAROV, Viktor ,  KRAUSE, Robert ,  REISS, Ira ,  SFERLAZZO, Piero

IPC: H01J37/317 ,  H01J37/305 ,  H01J37/20 ,  H01J37/08 ,  C23C14/34 ,  C23C14/50

CPC classification number: C23C14/505 ,  C23C14/221 ,  C23C14/46 ,  C23C14/542 ,  H01J37/08 ,  H01J37/20 ,  H01J37/3053 ,  H01J37/3178 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221

Abstract: Method and apparatus for processing a substrate (44) with an energetic particle beam (42). Features (66) on the substrate (44) are oriented relative to the energetic particle beam (42) and the substrate (44) is scanned through the energetic particle beam (42). The substrate (44) is periodically indexed about its azimuthal axis (45) of symmetry, while shielded from exposure to the energetic particle beam (42), to reorient the features (66) relative to the major dimension (49) of the beam (42).

Abstract translation: 用能量粒子束（42）处理衬底（44）的方法和装置。 衬底（44）上的特征（66）相对于能量粒子束（42）定向，衬底（44）通过能量粒子束（42）扫描。 衬底（44）周围围绕其对称轴的方位角（45）进行索引，同时防止暴露于能量粒子束（42），以相对于梁的主要尺寸（49）重新定向特征（66） 42）。

公开(公告)号：WO2007075435A3

公开(公告)日：2007-07-05

申请号：PCT/US2006/047945

申请日：2006-12-14

Applicant: FLUENS CORPORATION ,  DEVITO, Richard ,  KLEIN, Martin ,  SFERLAZZO, Piero

Inventor： DEVITO, Richard ,  KLEIN, Martin ,  SFERLAZZO, Piero

IPC: C23C14/00 ,  C23C14/32

Abstract: A reactive sputtering system includes a vacuum chamber and a reactive ion source that is positioned inside the vacuum chamber. The reactive ion source generates a reactive ion beam from a reactant gas. A sputtering chamber is positioned in the vacuum chamber. The sputtering chamber includes a sputter source having a sputtering target that generates sputtering flux, walls that contain an inert gas, and a seal that impedes the reactant gas from entering into the sputtering chamber and that impedes inert gas and sputtered material from escaping into the vacuum chamber. A transport mechanism transports a substrate under the reactive ion source and through the sputtering chamber. The substrate is exposed to the reactive ion beam while passing under the reactive ion source and then is exposed to sputtering flux while passing through the sputtering chamber.

公开(公告)号：WO2004094692A1

公开(公告)日：2004-11-04

申请号：PCT/US2004/006455

申请日：2004-03-03

Applicant: FLUENS CORPORATION ,  SFERLAZZO, Piero

Inventor： SFERLAZZO, Piero

IPC: C23C16/44

CPC classification number: C23C16/45551 ,  C23C16/45508 ,  C23C16/4584 ,  Y10S414/139

Abstract: An atomic layer deposition system is described that includes a deposition chamber. A first and second reaction chamber are positioned in the deposition chamber and contain a first and a second reactant species, respectively. A monolayer of the first reactant species is deposited on a substrate passing through the first reaction chamber. A monolayer of the second reactant species is deposited on a substrate passing through the second reaction chamber. A transport mechanism transports a substrate in a path through the first reaction chamber and through the second reaction chamber, thereby depositing a film on the substrate by atomic layer deposition. The shape of the first and the second reaction chambers are chosen to achieve a constant exposure of the substrate to reactant species when the transport mechanism transports the substrate in the path through the respective reaction chambers at the constant transport rate.

Abstract translation: 描述了包括沉积室的原子层沉积系统。 第一和第二反应室分别位于沉积室中并含有第一和第二反应物种类。 第一反应物种的单层沉积在穿过第一反应室的基板上。 第二反应物种类的单层沉积在穿过第二反应室的基板上。 输送机构在通过第一反应室并通过第二反应室的路径中输送基板，由此通过原子层沉积在基板上沉积膜。 选择第一和第二反应室的形状，以便当输送机构以恒定的输送速率将基板输送通过相应的反应室的路径时，使基板恒定地暴露于反应物种。

公开(公告)号：WO2011149678A2

公开(公告)日：2011-12-01

申请号：PCT/US2011/036167

申请日：2011-05-12

Applicant: AVENTA SYSTEMS, LLC ,  SFERLAZZO, Piero

Inventor： SFERLAZZO, Piero

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4584 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/67784 ,  H01L21/68771

Abstract: Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

Abstract translation: 描述了包括沉积室，一个或多个衬底载体，气体注入器和加热系统的线性分批CVD系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体构造成将衬底保持在线性构型。 每个气体喷射器包括一个端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得能够沿着反应室的长度均匀分布前体气体跨基板，并且允许与常规沉积室相比较处理更多数量的基板。