公开(公告)号：WO2012082323A1

公开(公告)日：2012-06-21

申请号：PCT/US2011/061615

申请日：2011-11-21

申请人： VEECO INSTRUMENTS INC. ,  GURARY, Alexander I. ,  KRAUS, Joseph Arthur ,  PARANJPE, Ajit ,  QUINN, William, E. ,  CREWE, David Albert

发明人： GURARY, Alexander I. ,  KRAUS, Joseph Arthur ,  PARANJPE, Ajit ,  QUINN, William, E. ,  CREWE, David Albert

IPC分类号： H01L21/683 ,  H01L21/208 ,  C23C16/458 ,  H01L21/68

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67754 ,  H01L21/68707 ,  H01L21/6875 ,  H01L21/68764 ,  H01L21/68771

摘要： A structure for a chemical vapor deposition reactor includes a support element (50) defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis (52) substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections (70) releasably engaged with the support element. Each carrier section (70) can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture (73) extending between the top and bottom surfaces. The carrier sections (70) can be disposed on the support element (50) with the bottom surfaces (79) of the carrier sections facing toward the upper surface (59) of the support element, so that (wafers 30) can be held in the apertures (73) of the carrier sections with one surface (32) of each wafer confronting the support element and an opposite surface (31) exposed at the top (surface 78) of the carrier sections.

摘要翻译： 用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件（50）和基本上垂直于上表面和下表面的垂直旋转轴线（52），以及多个承载部分 ）可释放地与支撑元件接合。 每个载体部分（70）可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔（73）。 载体部分（70）可以设置在支撑元件（50）上，载体部分的底表面（79）面向支撑元件的上表面（59），使得（晶片30）可以保持在 载体部分的孔（73）具有面对支撑元件的每个晶片的一个表面（32）和暴露在载体部分的顶部（表面78）处的相对表面（31）。

公开(公告)号：WO2009075747A1

公开(公告)日：2009-06-18

申请号：PCT/US2008/013295

申请日：2008-12-01

申请人： VEECO INSTRUMENTS INC. ,  BOGUSLAVSKIY, Vadim ,  GURARY, Alexander, I. ,  MOY, Keng ,  ARMOUR, Eric, A.

发明人： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander, I. ,  MOY, Keng ,  ARMOUR, Eric, A.

IPC分类号： H01L21/205 ,  H01L21/677

CPC分类号： C23C16/4581 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

摘要： A wafer carrier (30) for a rotating disc CVD reactor includes a unitary plate (32) of a ceramic such as silicon carbide defining wafer-holding features such as pockets (38) on its upstream surface (34) and also includes a hub (40) removably mounted to the plate (32) in a central region (44) of the plate (32). The hub (40) provides a secure connection to the spindle (16) of the reactor without imposing concentrated stresses on the ceramic plate (32). The hub (40) can be removed during cleaning of the plate (32). The wafer carrier (30) also preferably includes a gas flow facilitating element (348, 448) on the upstream surface (34) of the plate (32) in the central region (44) of the plate (32). The gas flow facilitating element (348, 448) helps redirect the flow of incident gases along the upstream surface (34) and away from a flow discontinuity in the central region (44).

摘要翻译： 用于旋转盘CVD反应器的晶片载体（30）包括诸如碳化硅的陶瓷的整体板（32），其限定晶片保持特征，例如在其上游表面（34）上的凹穴（38），并且还包括毂 40）可移除地安装在板（32）的中心区域（44）中的板（32）上。 轮毂（40）提供与反应器的主轴（16）的牢固连接，而不会在陶瓷板（32）上施加集中的应力。 在清洁板（32）期间可以移除轮毂（40）。 晶片载体（30）还优选地包括位于板（32）的中心区域（44）中的板（32）的上游表面（34）上的气流促进元件（348,448）。 气体促进元件（348,448）有助于重新引导沿着上游表面（34）的入射气体流并远离中心区域（44）中的流动不连续。

公开(公告)号：WO2012166770A3

公开(公告)日：2013-02-28

申请号：PCT/US2012039947

申请日：2012-05-30

申请人： VEECO INSTR INC ,  BOGUSLAVSKIY VADIM ,  MANGUM JOSHUA ,  KING MATTHEW ,  MARCELO EARL ,  ARMOUR ERIC A ,  GURARY ALEXANDER I ,  QUINN WILLIAM E ,  TAS GURAY

发明人： BOGUSLAVSKIY VADIM ,  MANGUM JOSHUA ,  KING MATTHEW ,  MARCELO EARL ,  ARMOUR ERIC A ,  GURARY ALEXANDER I ,  QUINN WILLIAM E ,  TAS GURAY

IPC分类号： H01L21/205 ,  H01L21/683

CPC分类号： H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01N21/71 ,  G01N21/75 ,  G01N23/20033 ,  G01N2021/1731 ,  G01N2021/745 ,  H01L21/67109 ,  H01L21/68771

摘要： An apparatus provides a carrier (80) rotatable about an axis of rotation (22) where the carrier has a top surface (88) adapted to hold at least one semiconductor wafer (140) and a surface characterization tool (120) which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation A method using the apparatus is also included.

摘要翻译： 一种装置提供一个能够围绕旋转轴线（22）旋转的载体（80），其中载体具有适于保持至少一个半导体晶片（140）的表面（88）和表面表征工具（120） 在相对于载体的顶表面和/或横向于旋转轴线的晶片的多个位置上移动也包括使用该装置的方法。

公开(公告)号：WO2012092127A8

公开(公告)日：2012-07-05

申请号：PCT/US2011/066831

申请日：2011-12-22

申请人： VEECO INSTRUMENTS INC. ,  GURARY, Alexander, I. ,  BOGUSLAVSKIY, Vadim ,  KRISHNAN, Sandeep ,  KING, Matthew

发明人： GURARY, Alexander, I. ,  BOGUSLAVSKIY, Vadim ,  KRISHNAN, Sandeep ,  KING, Matthew

IPC分类号： G01J5/00

摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

公开(公告)号：WO2009009121A1

公开(公告)日：2009-01-15

申请号：PCT/US2008/008507

申请日：2008-07-09

申请人： VEECO INSTRUMENTS INC. ,  SFERLAZZO, Piero ,  GURARY, Alexander, I. ,  ARMOUR, Eric, A. ,  QUINN, William, E. ,  TING, Steve

发明人： SFERLAZZO, Piero ,  GURARY, Alexander, I. ,  ARMOUR, Eric, A. ,  QUINN, William, E. ,  TING, Steve

IPC分类号： C23C16/00

CPC分类号： C23C16/45589

摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates (138) are rotated on a carrier (104) about an axis (106) while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets (170). A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector (108), and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底（138）围绕轴线（106）在载体（104）上旋转，同时保持 所述一个或多个基板基本上垂直于旋转轴线并且沿着旋转轴线沿上游方向面对。 在旋转期间，第一气体沿着下游方向从第一组气体入口（170）朝向一个或多个基板排出。 第二气体沿着下游方向从至少一个可移动气体喷射器（108）朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量移动或朝向 旋转轴。

公开(公告)号：WO2013173152A1

公开(公告)日：2013-11-21

申请号：PCT/US2013/040246

申请日：2013-05-09

申请人： VEECO INSTRUMENTS INC. ,  BARRISS, Louise, S. ,  COMUNALE, Richard, A. ,  FREMGEN, Roger, P. ,  GURARY, Alexander, I. ,  LUSE, Todd, A. ,  MILGATE, III, Robert, White ,  POLLOCK, John, D.

发明人： BARRISS, Louise, S. ,  COMUNALE, Richard, A. ,  FREMGEN, Roger, P. ,  GURARY, Alexander, I. ,  LUSE, Todd, A. ,  MILGATE, III, Robert, White ,  POLLOCK, John, D.

IPC分类号： C23C16/44 ,  C23C16/52

CPC分类号： C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/68785 ,  H01L21/68792

摘要： A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

摘要翻译： 用于化学气相沉积的旋转盘式反应器包括真空室和铁磁流体馈通，其包括使马达轴进入真空室的上部和下部铁磁流体密封件。 电动机联接到电动机轴并且位于上部和下部铁磁流体密封件之间的大气区域中。 转盘位于真空室中并联接到电动机轴，使得电动机以期望的转速旋转转台。 电介质支撑件联接到转盘，使得转盘在被轴驱动时旋转电介质支架。 衬底载体位于用于化学气相沉积处理的真空室中的电介质支撑体上。 加热器位于基板载体附近，将基板载体的温度控制到用于化学气相沉积的所需温度。

公开(公告)号：WO2012166770A2

公开(公告)日：2012-12-06

申请号：PCT/US2012/039947

申请日：2012-05-30

申请人： VEECO INSTRUMENTS INC. ,  BOGUSLAVSKIY, Vadim ,  MANGUM, Joshua ,  KING, Matthew ,  MARCELO, Earl ,  ARMOUR, Eric, A. ,  GURARY, Alexander, I. ,  QUINN, William, E. ,  TAS, Guray

发明人： BOGUSLAVSKIY, Vadim ,  MANGUM, Joshua ,  KING, Matthew ,  MARCELO, Earl ,  ARMOUR, Eric, A. ,  GURARY, Alexander, I. ,  QUINN, William, E. ,  TAS, Guray

IPC分类号： H01L21/205 ,  H01L21/683

CPC分类号： H01L21/68764 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01N21/71 ,  G01N21/75 ,  G01N23/20033 ,  G01N2021/1731 ,  G01N2021/745 ,  H01L21/67109 ,  H01L21/68771

摘要： An apparatus provides a carrier (80) rotatable about an axis of rotation (22) where the carrier has a top surface (88) adapted to hold at least one semiconductor wafer (140) and a surface characterization tool (120) which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation A method using the apparatus is also included.

摘要翻译： 一种装置提供一种能够围绕旋转轴线（22）旋转的载体（80），其中载体具有适于保持至少一个半导体晶片（140）的表面（88）和表面表征工具（120） 在相对于载体的顶表面和/或横向于旋转轴线的晶片的多个位置上移动也包括使用该装置的方法。

公开(公告)号：WO2012092127A1

公开(公告)日：2012-07-05

申请号：PCT/US2011066831

申请日：2011-12-22

申请人： VEECO INSTR INC ,  GURARY ALEXANDER I ,  BOGUSLAVSKIY VADIM ,  KRISHNAN SANDEEP ,  KING MATTHEW

发明人： GURARY ALEXANDER I ,  BOGUSLAVSKIY VADIM ,  KRISHNAN SANDEEP ,  KING MATTHEW

IPC分类号： G01J5/00

CPC分类号： G01J5/0003 ,  G01J5/0007 ,  G01J2005/0048

摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

摘要翻译： 用于诸如CVD反应器12的晶片处理反应器的原位高温计校准的方法理想地包括将校准高温计80定位在第一校准位置A并加热反应器直到反应器达到高温计校准温度的步骤。 该方法理想地还包括围绕旋转轴线42旋转支撑元件40，并且当支撑元件围绕旋转轴线旋转时，从安装在第一操作位置1R的第一操作高温计71获得第一操作温度测量值，并获得第一 从校准高温计80校准温度测量值。理想地，校准高温计80和第一操作高温计71都适合于从晶片的旋转轴42以第一径向距离D1接收来自晶片支撑元件40的第一部分的辐射 支持元素

公开(公告)号：WO2009009121A4

公开(公告)日：2009-02-26

申请号：PCT/US2008008507

申请日：2008-07-09

申请人： VEECO INSTR INC ,  SFERLAZZO PIERO ,  GURARY ALEXANDER I ,  ARMOUR ERIC A ,  QUINN WILLIAM E ,  TING STEVE

发明人： SFERLAZZO PIERO ,  GURARY ALEXANDER I ,  ARMOUR ERIC A ,  QUINN WILLIAM E ,  TING STEVE

IPC分类号： C23C16/00

CPC分类号： C23C16/45589

摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system are provided, wherein one or more substrates (138) are rotated on a carrier (104) about an axis (106) while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets (170). A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector (108), and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中的晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底（138）围绕轴线（106）在载体（104）上旋转，同时保持 所述一个或多个基底基本上垂直于所述旋转轴线并面向沿着所述旋转轴线的上游方向。 在旋转期间，第一气体在下游方向上从第一组气体入口（170）朝向一个或多个基板排出。 第二气体在下游方向上从至少一个可移动气体喷射器（108）朝向一个或多个基板排出，并且至少一个可移动气体入口随着运动分量沿径向朝向或远离 旋转轴。