CRUCIBLE FOR THE PRODUCTION OF CRYSTALLINE SEMICONDUCTOR INGOTS AND PROCESS FOR MANUFACTURING THE SAME
    3.
    发明申请
    CRUCIBLE FOR THE PRODUCTION OF CRYSTALLINE SEMICONDUCTOR INGOTS AND PROCESS FOR MANUFACTURING THE SAME 审中-公开
    用于制造晶体半导体器件的制造方法及其制造方法

    公开(公告)号:WO2013087598A1

    公开(公告)日:2013-06-20

    申请号:PCT/EP2012/075021

    申请日:2012-12-11

    Abstract: The present invention concerns a crucible (1) for the production of crystalline semiconductor ingots, said crucible comprising an inner volume defined by a floor (1a) which top surface comprises a planar portion defining a first horizontal plane (H) and peripheral side walls (1b) each comprising an inner surface comprising a planar portion substantially vertical, defining a substantially vertical plane (V), and normal to the first, horizontal plane (H), said side walls (1b) joining the floor (1a) at the perimeter of the latter by forming a radius of curvature, R1, of at least 1 mm, characterized in that, the intersecting line (hv) forming the intersection between the first, horizontal plane (H) and the substantially vertical planes (V) defined by the substantially vertical planar portions of each side wall (1b) is entirely located on the side walls (1b), on the floor (1a), or in the inner volume of the crucible.

    Abstract translation: 本发明涉及一种用于生产结晶半导体锭的坩埚(1),所述坩埚包括由地板(1a)限定的内部容积,该顶部表面包括限定第一水平面(H)的平面部分和周边侧壁 1b),每个包括内表面,所述内表面包括基本垂直的平面部分,限定基本垂直的平面(V),并且垂直于所述第一水平面(H),所述侧壁(1b)在所述周边 通过形成至少1mm的曲率半径R1,其特征在于,形成第一水平面(H)和基本垂直平面(V)之间的交点的交叉线(hv)由 每个侧壁(1b)的基本上垂直的平面部分完全位于侧壁(1b)上,地板(1a)上或坩埚的内部容积中。

    CRUCIBLE AND METHOD FOR THE PRODUCTION OF A (NEAR) MONOCRYSTALLINE SEMICONDUCTOR INGOT
    4.
    发明申请
    CRUCIBLE AND METHOD FOR THE PRODUCTION OF A (NEAR) MONOCRYSTALLINE SEMICONDUCTOR INGOT 审中-公开
    用于生产(近似)单晶半导体器件的可制造和方法

    公开(公告)号:WO2013064626A1

    公开(公告)日:2013-05-10

    申请号:PCT/EP2012/071711

    申请日:2012-11-02

    CPC classification number: C30B11/002 C30B11/14 C30B29/06

    Abstract: The present invention concerns a crucible (1) for the production of crystalline semiconducting material ingots, such as silicon, said crucible comprising peripheral side walls (1b) and a floor (1a) at least a portion of said floor being coated with a top layer (2), characterized in that, said top layer (2) has a thickness, δ, of at least 500 μm and in that, at a deformation temperature below 1400 °C said top layer is plastically or viscously deformable.

    Abstract translation: 本发明涉及用于生产诸如硅的结晶半导体材料锭的坩埚(1),所述坩埚包括周边侧壁(1b)和地板(1a),所述地板的至少一部分涂覆有顶层 (2),其特征在于,所述顶层(2)具有至少500μm的厚度δ,并且在低于1400℃的变形温度下,所述顶层是塑性的或可变形的。

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