Abstract:
A support assembly for use in semiconductor processing includes an application substrate, a heater layer disposed directly onto the application substrate, an insulation layer disposed onto the heater layer, and a second substrate disposed onto the insulation layer. The heater layer is directly disposed onto the application substrate by a layered process such that the heater layer is in direct contact with the application substrate. The application substrate defines a material having a relatively low coefficient of thermal expansion that is matched to a coefficient of thermal expansion of the heater layer.
Abstract:
A termination assembly for a heater assembly includes a plurality of resistive heaters (26) arranged in discrete power phases, each resistive heater comprising a resistive heating element surrounded by dielectric material and a sheath. The termination assembly includes a plurality of electrically nonconductive members (76). Each electrically nonconductive member (76) includes a plurality of apertures configured to receive power pins (80) of the plurality of resistive heaters. The termination assembly includes a plurality of connectors (82) configured to connect the power pins to the electrically nonconductive members. Each electrically nonconductive member includes a number of the plurality of connectors corresponding to a number of power pins being terminated. The termination assembly includes an electrical circuit (85) embedded in or disposed on at least one of the plurality of electrically nonconductive members.
Abstract:
A heater system is provided that includes a hybrid insulation cover that has a first cover disposed around hinged carrier members and heat trace sections, and a second cover operatively engaged with the first cover and adapted for detachable placement around a heating target and its varying geometries. A flexible insulation jacket having a similar construction as the second cover is also provided for use with connector assemblies. Furthermore, a heater system is provided that includes at least one heat trace section encapsulated within adjacent insulating members for use with heating gaslines and pumplines of semiconductor processing systems.
Abstract:
A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.