公开(公告)号：WO2015144700A3

公开(公告)日：2015-11-12

申请号：PCT/EP2015056250

申请日：2015-03-24

Applicant: ZEISS CARL SMS LTD ,  ZEISS CARL SMT GMBH

Inventor： DMITRIEV VLADIMIR ,  GEH BERND

IPC: G03F1/60 ,  G03F1/72 ,  G03F7/20 ,  G21K1/06 ,  H01L21/66

CPC classification number: G03F7/70283 ,  B82Y40/00 ,  G03F1/60 ,  G03F1/72 ,  G03F7/0002 ,  G03F7/70316 ,  G03F7/70591 ,  G21K1/062 ,  H01L22/12 ,  H01L22/20

Abstract: The invention relates to a method for generating a predetermined three-dimensional contour of a component and/or a wafer, comprising: (a) determining a deviation of an existing three-dimensional contour of the component and/or the wafer from the predetermined three-dimensional contour; (b) calculating at least one three-dimensional arrangement of laser pulses having one or more parameter sets defining the laser pulses for correcting the determined existing deviation of the three-dimensional contour from the predetermined three-dimensional contour; and (c) applying the calculated at least one three-dimensional arrangement of laser pulses on the component and/or the wafer for generating the predetermined three-dimensional contour.

Abstract translation: 本发明涉及用于产生部件和/或晶片的预定三维轮廓的方法，包括：（a）确定部件和/或晶片的现有三维轮廓与预定的三 三维轮廓; （b）计算具有一个或多个限定激光脉冲的参数组的激光脉冲的至少一个三维布置，以校正三维轮廓与预定三维轮廓的已确定的存在偏差; （c）将所计算的至少一个激光脉冲的三维布置应用于所述部件和/或所述晶片上以产生所述预定三维轮廓。

公开(公告)号：WO2012009108A3

公开(公告)日：2012-05-31

申请号：PCT/US2011041155

申请日：2011-06-21

Applicant: ZEISS CARL SMS LTD ,  ZEISS CARL SMT GMBH ,  ZEISS CARL SMS GMBH ,  OSHEMKOV SERGEY ,  KLAESGES RALPH ,  MENGEL MARKUS ,  KRUGLYAKOV VLADIMIR ,  BEN-ZVI GUY ,  DMITRIEV VLADIMIR ,  ZAIT EITAN ,  LABOVITZ STEVEN

Inventor： OSHEMKOV SERGEY ,  KLAESGES RALPH ,  MENGEL MARKUS ,  KRUGLYAKOV VLADIMIR ,  BEN-ZVI GUY ,  DMITRIEV VLADIMIR ,  ZAIT EITAN ,  LABOVITZ STEVEN

IPC: C03C23/00 ,  G03F7/20

CPC classification number: G03F7/2002 ,  C03C23/0025

Abstract: A system for processing a substrate includes a light source to provide light pulses, a stage to support a substrate, optics to focus the light pulses onto the substrate, a scanner to scan the light pulses across the substrate, a computer to control properties of the light pulses and the scanning of the light pulses such that color centers are generated in various regions of the substrate, and at least one of (i) an ultraviolet light source to irradiate the substrate with ultraviolet light or (ii) a heater to heat the substrate after formation of the color centers to stabilize a transmittance spectrum of the substrate.

Abstract translation: 用于处理衬底的系统包括提供光脉冲的光源，支撑衬底的阶段，用于将光脉冲聚焦到衬底上的光学器件，扫描器以跨越衬底扫描光脉冲，计算机，以控制 光脉冲和光脉冲的扫描，使得在基板的各个区域中产生色心，以及（i）用紫外线照射基板的紫外光源或（ii）加热器中的至少一个 在形成颜色中心之后的衬底以稳定衬底的透射光谱。

公开(公告)号：WO2016042549A2

公开(公告)日：2016-03-24

申请号：PCT/IL2015050927

申请日：2015-09-10

Applicant: ZEISS CARL SMS LTD

Inventor： DMITRIEV VLADIMIR

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F1/72 ,  G03F7/70283

Abstract: Method, apparatus for imparting direction-selective light attenuation. A method for imparting direction-selective light attenuation to a photomask may include assigning different attenuation levels to light rays of different directions of incidence. The method may also include computing an array of shading elements to attenuate the light rays with the assigned different attenuation levels, depending on the direction of incidence of the light rays. The method may further include inscribing the array of shading elements within a substrate of the photomask.

Abstract translation: 方法，用于赋予方向选择性光衰减的装置。 用于向光掩模施加方向选择性光衰减的方法可以包括向不同入射方向的光线分配不同的衰减水平。 该方法还可以包括根据光线的入射方向来计算遮光元件的阵列以衰减具有分配的不同衰减水平的光线。 该方法还可以包括将遮光元件阵列刻写在光掩模的衬底内。

公开(公告)号：WO2012080008A3

公开(公告)日：2012-08-09

申请号：PCT/EP2011071654

申请日：2011-12-02

Applicant: ZEISS CARL SMS GMBH ,  ZEISS CARL SMS LTD ,  BEYER DIRK ,  DMITRIEV VLADIMIR ,  SHARONI OFIR ,  WERTSMAN NADAV

Inventor： BEYER DIRK ,  DMITRIEV VLADIMIR ,  SHARONI OFIR ,  WERTSMAN NADAV

IPC: G03F1/00 ,  G03F1/72 ,  G03F1/84 ,  G03F7/20

CPC classification number: G03F1/72 ,  G03F1/84 ,  G03F7/70466 ,  G03F7/70625 ,  G03F7/70633

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises:(a) measuring the at least one error on a wafer at a wafer processing site,and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract translation: 本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改 至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。

公开(公告)号：WO2012046233A2

公开(公告)日：2012-04-12

申请号：PCT/IL2011000779

申请日：2011-10-05

Applicant: ZEISS CARL SMS LTD ,  DMITRIEV VLADIMIR ,  SHARONI OFIR

Inventor： DMITRIEV VLADIMIR ,  SHARONI OFIR

IPC: G03F7/20

CPC classification number: G06F17/5081 ,  G03F7/70508 ,  G03F7/70625

Abstract: Data associated with a substrate can be processed by measuring a property of at least a first type of specific features and a second type of specific features on a substrate. The first type of specific features is measured at a first plurality of locations on the substrate to generate a first group of measured values, and the second type of specific features is measured at a second plurality of locations on the substrate to generate a second group of measured values, in which the first and second groups of measured values are influenced by critical dimension variations of the substrate. A combined measurement function is defined based on combining the at least first and second groups of measured values. At least one group of measured values is transformed prior to combining with another group or other groups of measured values, in which the transformation is defined by a group of coefficients. Variations in the critical dimension across the substrate are determined based on the combined measurement function and a predetermined relationship between the measured values and the critical dimension.

Abstract translation: 可以通过测量衬底上的至少第一类型的特定特征和第二类型的特定特征的性质来处理与衬底相关联的数据。 在衬底上的第一多个位置处测量第一类型的特定特征以生成第一组测量值，并且在衬底上的第二多个位置处测量第二类型的特定特征以生成第二组 测量值，其中第一和第二组测量值受衬底临界尺寸变化的影响。 基于组合测量值的至少第一组和第二组来定义组合测量功能。 至少一组测量值在与另一组或其他组测量值组合之前进行变换，其中变换由一组系数定义。 基于组合的测量函数和测量值与临界尺寸之间的预定关系来确定衬底上的临界尺寸的变化。