Abstract:
A lithographic apparatus comprising a support structure constructed to support a mask comprising a patterned area which is capable of imparting an EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the support structure is movable in a scanning direction, a substrate table constructed to hold a substrate, wherein the substrate table is movable in the scanning direction, and a projection system configured to project the patterned radiation beam onto an exposure region of the substrate, wherein the projection system has a demagnification in the scanning direction which is greater than a demagnification in a second direction which is perpendicular to the scanning direction and wherein the demagnification in the second direction is greater than 4x.
Abstract:
Method for measuring a spherical-astigmatic optical area (40), comprising the steps of: a) generating a spherical-astigmatic wavefront as a test wavefront by means of a wavefront generating apparatus (10); b) interferometrically measuring wavefront aberrations between the wavefront generating apparatus (10) and the spherical-astigmatic area (40) which is adjusted to the wavefront generating apparatus (40) in such a way that the test wavefront impinges any point in the spherical-astigmatic area (40) substantially in a vertical direction, a plurality of measurements being taken in which the spherical-astigmatic area (40) is measured in a number of positions, spherized about the two centers of the radii of the astigmatism and/or rotated by 180° about a surface normal to the spherical-astigmatic area (40), such that corresponding interferogram phases are determined; and c) determining the wavefront of the wavefront generating apparatus (10) and of a shape of the spherical-astigmatic area (40) by means of a mathematical reconstructive method, whereupon the surface of the spherical-astigmatic area (40) is corrected using a suitable processing method, steps a) to c) being repeated until the wavefront aberrations are smaller than a defined threshold value.
Abstract:
An EUV light source (2) serves for generating a used output beam (3) of EUV illumination light for a projection exposure apparatus for projection lithography. The light source (2) has an EUV generation device (2c), which generates an EUV raw output beam (30). The raw output beam (30) has a circular or elliptic polarization (31). A used polarization setting device (32) of the light source (2), for the purpose of setting the polarization of the used output beam (3), exerts on the raw output beam (30) an effect (34) which is linearly polarizing with regard to the direction of polarization. The used polarization setting device (32) has at least one phase retarding component (37) which is arranged in the beam path of the raw output beam (30). Said at least one phase retarding component generates a net phase shift between the two linearly polarized waves which are superimposed to form the polarization of the raw output beam (30), which net phase shift is less than half a wavelength λ of the used output beam (3) of the EUV illumination light. The result is an EUV light source having an improved output beam for resolution-optimized illumination.
Abstract:
The invention concerns an arrangement for the thermal actuation of a mirror, in particular in a microlithographic projection exposure apparatus, the mirror having a mirror substrate (102, 202) and an optically effective surface (101, 201) and also at least one access channel (110, 111, 112, 210) extending from a surface of the mirror (100) not corresponding to the optically effective surface in the direction of this effective surface (101, 201),wherein a cooling element (120, 220)with a cooling power that can be set variably protrudes into the at least one access channel (110, 111, 112, 210), and wherein at least one heat source for coupling heating power that can be set variably into the region of the mirror substrate (102, 202) that is adjoining the optically effective surface is provided;wherein by setting the cooling power of the cooling element (120, 220)and the heating power of the at least one heat source, a thermal flux between the optically effective surface (101, 201) and said surface of the mirror (100) not corresponding to the optically effective surface is achievable, said thermal flux resulting in a temperature gradient and a related local variation of a value of the coefficient of thermal expansion in the mirror substrate (102, 202).
Abstract:
An EUV light source (2) serves for generating a used output beam (3) of EUV illumination light for a projection exposure apparatus for projection lithography. The light source (2) has an EUV generation device (2c), which generates an EUV raw output beam (30). The raw output beam (30) has a circular or elliptic polarization (31). A used polarization setting device (32) of the light source (2), for the purpose of setting the polarization of the used output beam (3), exerts on the raw output beam (30) an effect (34) which is linearly polarizing with regard to the direction of polarization. The used polarization setting device (32) has at least one phase retarding component (37) which is arranged in the beam path of the raw output beam (30). Said at least one phase retarding component generates a net phase shift between the two linearly polarized waves which are superimposed to form the polarization of the raw output beam (30), which net phase shift is less than half a wavelength λ of the used output beam (3) of the EUV illumination light. The result is an EUV light source having an improved output beam for resolution-optimized illumination.
Abstract:
A microlithographic projection exposure apparatus (10) configured in particular for EUV light includes a projection objective (26) having an adaptive mirror (M2) comprising, for its part, a mirror substrate (44) and an actuation unit (42) for deforming the mirror substrate (44). Using imaging aberrations measured previously, a set of control commands for the actuation unit (42) is determined, and when said set of control commands is transferred to the actuation unit (42), the mirror substrate (44) is deformed such that the imaging aberrations measured previously are corrected. Said set of control commands is stored in a nonvolatile data memory (66) and transferred to the actuation unit (42). If the operation of the projection exposure apparatus is interrupted after relatively long operating durations, the correction state previously present can be rapidly reestablished by simply reloading the stored control commands, without a renewed measurement of the imaging aberrations of the projection objective (26) being required.
Abstract:
A projection exposure apparatus (10) for microlithography comprises a plurality of optical components (M1-M6) forming an exposure beam path, and comprises a distance measurement system (30, 130, 230) for measuring a distance between at least one of the optical components (M1-M6) and a reference element (40, 140, 240). The distance measurement system comprises a frequency comb generator (32, 132, 232), which is configured for generating electromagnetic radiation (36, 236) with a comb-shaped frequency spectrum.
Abstract:
A device (26) for the magnetic-field-compensated positioning of a component (25, 30) comprises a holding unit (27) for mounting the component (25, 30) and means (33) for at least partly compensating for an external magnetic field in the region of the holding unit (27).
Abstract:
A lithography apparatus comprises a structural element, a sensor (220) having a detection region (225) for detecting a physical quantity in at least one detection direction with respect to the structural element, and a sensor receptacle (210) for mounting the sensor (220) to the structural element, wherein the sensor (220) is arranged in such a way that the maximum displacement of the detection region (225, 255) in the detection direction relative to the structural element (140) is not greater than the maximum displacement of the detection region (225, 255) in the detection direction in the case of an arrangement of the sensor (220, 250) orthogonally with respect thereto.
Abstract:
A charged particle beam focusing apparatus (200) includes a charged particle beam generator (202) configured to project simultaneously at least one non-astigmatic charged particle beam and at least one astigmatic charged particle beam onto locations (217) on a surface of a specimen (39), thereby causing released electrons to be emitted from the locations. The apparatus also includes an imaging detector (31) configured to receive the released electrons from the locations and to form images of the locations from the released electrons. A processor (32) analyzes the image produced by the at least one astigmatic charged particle beam and in response thereto adjusts a focus of the at least one non-astigmatic charged particle beam.