公开(公告)号：WO2014116316A2

公开(公告)日：2014-07-31

申请号：PCT/US2013067886

申请日：2013-10-31

申请人： ZHOU CHONGWU ,  GALATSIS KOSMAS ,  CHEN POCHIANG ,  FU YUE

发明人： ZHOU CHONGWU ,  GALATSIS KOSMAS ,  CHEN POCHIANG ,  FU YUE

IPC分类号： B66C1/48 ,  B66C1/44

CPC分类号： H01L27/3274 ,  H01L29/1606 ,  H01L51/0004 ,  H01L51/0034 ,  H01L51/0048 ,  H01L51/0096 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

摘要： The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

公开(公告)号：WO2014116316A3

公开(公告)日：2014-08-28

申请号：PCT/US2013067886

申请日：2013-10-31

申请人： ZHOU CHONGWU ,  GALATSIS KOSMAS ,  CHEN POCHIANG ,  FU YUE

发明人： ZHOU CHONGWU ,  GALATSIS KOSMAS ,  CHEN POCHIANG ,  FU YUE

IPC分类号： H01L29/08

CPC分类号： H01L27/3274 ,  H01L29/1606 ,  H01L51/0004 ,  H01L51/0034 ,  H01L51/0048 ,  H01L51/0096 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

摘要： The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

摘要翻译： 本技术涉及一种方法，包括以下步骤：在衬底上设置第一导电材料，以在衬底上形成第一电极层，其中第一层包括源电极和漏电极，以及印刷包括碳纳米管 在源电极和漏极之间形成至少第一界面，并且在碳纳米管膜和漏电极之间形成第二界面。 在某些方面，该方法还可以包括在碳纳米管膜和源电极之间的第一界面和碳纳米管膜和漏电极之间的第二界面上设置第二导电材料的步骤。 在某些方面，还提供了晶体管器件。

公开(公告)号：WO2012159078A3

公开(公告)日：2013-03-28

申请号：PCT/US2012038693

申请日：2012-05-18

申请人： UNIV CALIFORNIA ,  KHALILI AMIRI PEDRAM ,  WANG KANG ,  GALATSIS KOSMAS

发明人： KHALILI AMIRI PEDRAM ,  WANG KANG ,  GALATSIS KOSMAS

IPC分类号： G11C11/15 ,  H01L21/8247 ,  H01L27/115

CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01L43/02 ,  H01L43/08

摘要： Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

摘要翻译： 描述了以高电池密度提供非易失性磁性器件的有效高速切换的电压控制磁隧道结和存储器件。 描述了实现方案，其提供具有面内和垂直磁化，双向开关磁化和域壁动力学控制的宽范围的电压控制替代。