METHODS FOR SYNTHESIS OF DYE-LABELED POLYMERS

    公开(公告)号:WO2023042157A1

    公开(公告)日:2023-03-23

    申请号:PCT/IB2022/058786

    申请日:2022-09-16

    Abstract: Dye-labeled polymers formed from a polymer and a dye are disclosed. Methods for labeling a polymer with a dye are also disclosed. The polymer can have any weight average molecular weight (Mw), particularly a Mw of > 5 megadalton (MDa) or > 6 MDa. The polymer contains reactive group(s) that can be activated by an activation agent in a buffer solution. Upon activation, the polymer bundles and forms activated polymer in a solid form. The activated polymer can react with a reactive group of the dye to form the dye-labeled polymer. By soaking the dye-labeled polymer in a solid form in an aqueous solvent, the dye-labeled polymer can regain the viscosifying property that is the same or substantially the same as the polymer prior to labeling with the dye.

    AMBIPOLAR OXIDE-SEMICONDUCTOR BASED TRANSISTOR AND METHOD OF MANUFACTURING

    公开(公告)号:WO2023042091A1

    公开(公告)日:2023-03-23

    申请号:PCT/IB2022/058660

    申请日:2022-09-14

    Abstract: An ambipolar, gate all around, semiconductor-based transistor (600) includes a substrate (602), a first-type channel structure (106) of a first-type material located on the substrate (602), the first-type channel structure (106) having a gate region, a source region, and a drain region, a second-type channel structure (310) of a second- type material completely surrounding the gate region of the first-type channel structure (106), but not present on the source region and the drain region. Furthermore, a dielectric material (108) fully surrounds the second-type material (310), a gate electrode (110) completely surrounds the dielectric material (108)., a source electrode is located on the source region and a drain electrode is located on the drain region. The first and second materials are semiconductor oxides, preferably Ga2O3 and NiO, the first-type material is one of p-or n-type and the second-type material is the other of the p- or n-type.

    RECONFIGURABLE INTELLIGENT SURFACE ENABLED LEAKAGE SUPPRESSION AND SIGNAL POWER MAXIMIZATION SYSTEM AND METHOD

    公开(公告)号:WO2023037243A1

    公开(公告)日:2023-03-16

    申请号:PCT/IB2022/058375

    申请日:2022-09-06

    Abstract: A base station (202) includes a transceiver (205) configured to exchange information with a desired wireless communication device (208) and with an undesired wireless communication device (212), and a processor (203) connected to the transceiver (205) and configured to calculate phase shifts of a reflecting beamforming vector to be applied at a reconfigurable intelligent surface, RIS, (110). The phase shifts are calculated using a Kronecker decomposition of the reflecting beamforming vector so that a first signal (402) emitted by the transceiver (205) and reflected from the RIS (110) toward the desired wireless communication device (208) is enhanced and a second signal (404) emitted by the transceiver (205) and reflected from the RIS (110) toward the undesired wireless communication device (212) is cancelled.

    MAGNETICALLY BOOSTED SPARK PLUG, IGNITION SYSTEM AND METHOD

    公开(公告)号:WO2022229803A1

    公开(公告)日:2022-11-03

    申请号:PCT/IB2022/053743

    申请日:2022-04-21

    Inventor: CHA, Min Suk

    Abstract: A magnetically boosted spark plug (100) for igniting a lean fuel mixture in an internal combustion engine includes a main electrode (104) configured to be electrically connected with a proximal end (104A) to a positive terminal of a voltage source (140) and to apply an electrical potential to a distal end (104B), which is opposite to the proximal end (104A); an insulator (106) configured to electrically insulate the main electrode (104) from an ambient, except for a distal region (105) extending from the distal end (104B); and a magnetic field generating element (120) configured to be connected to a ground terminal of the voltage source (140). The magnetic field generating element (120) is located around the (1) insulator (106) and (2) main electrode (104) so that the distal region (105) is exposed to the ambient.

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