Abstract:
A process for preparing a meseporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride and metalloid oxide, sulfide, selenide or telluride. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous material, A mesoporous material, prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control.nano-sized wall crystallinity and mesoporosity in the mesoporous material. Mesoporous materials and a method of tuning structural properties of mesoporous materials.
Abstract:
The present invention relates to an ink comprising at least one particle (1) comprising a first material (11); and at least one liquid vehicle; wherein the particle (1) comprises at least one particle (2) comprising a second material (21) and at least one nanoparticle (3) dispersed in said second material (21); wherein the first material (11) and the second material (21) have an extinction coefficient less or equal to 15x10 -5 at 460 nm. The invention also relates to inks, light emitting materials comprising at least one ink, patterns comprising at least one ink, particles deposited on a support, optoelectronic devices comprising at least one ink and method for depositing an ink on a support.
Abstract:
Method for removing cadmium from phosphoric acid by the use of the permeation process through a liquid membrane. The method is comprised of: a) formulating an emulsion of the aqueous-in-organic type wherein the dispersed aqueous phase is the re-extraction phase and the organic phase contains an extraction agent of formula (I) wherein R1 and R2 are aliphatic, arylic or aromatic radicals and n can be simultaneously 1 or 0; b) dispersing said emulsion in a phosphoric acid solution; c) removing the aqueous phase which contains the cadmium-free phosphoric acid; and d) breaking the cadmium-laden emulsion to recycle the extraction agent. The obtained phosphoric acid may have a cadmium content of 1.5 ppm and may be used in the production of fertilizers. A preferred emulsion contains bis (2,4,4-trimethylpentyl) monothiophosphinic acid as agent for the selective extraction of cadmium.
Abstract:
The present invention relates to a method for obtaining at least one particle (1) comprising the following steps: (a) preparing a solution A comprising at least one precursor of at least one element selected from the group constituted by silicon, boron, phosphorus, germanium, arsenic, aluminium, iron, titanium, zirconium, nickel, zinc, calcium, sodium, barium, potassium, magnesium, lead, silver, vanadium, tellurium, manganese, iridium, scandium, niobium, tin, cerium, beryllium, tantalum, sulfur, selenium, nitrogen, fluorine, chlorine; (b) preparing an aqueous solution B; (c) forming droplets of solution A by a first means for forming droplets; (d) forming droplets of solution B by a second means for forming droplets; (e) mixing said droplets; (f) dispersing the mixed droplets in a gas flow; (g) heating said dispersed droplets at a temperature sufficient to obtain the at least one particle (1); (h) cooling of said at least one particle (1); and (i) separating and collecting said at least one particle (1); wherein the aqueous solution may be acidic, neutral, or basic; and wherein at least one colloidal suspension comprising a plurality of nanoparticles 3 is mixed with the solution A at step (a) and/or with the solution B at step (b). The present invention also relates to a device for implementing the method.
Abstract:
A process for preparing a meseporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride and metalloid oxide, sulfide, selenide or telluride. The process comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to form the mesoporous material, A mesoporous material, prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing an acidic mixture comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the acidic mixture at a temperature and for a period of time sufficient to control.nano-sized wall crystallinity and mesoporosity in the mesoporous material. Mesoporous materials and a method of tuning structural properties of mesoporous materials.
Abstract:
There is presented a composition of scandium doped Zinc Cadmium Oxide with the general formula Zn z Cd x Sc y O which the inventors have prepared, and for which material the inventors have made the insight that it is particularly advantageous as an n-type oxide material, such as particularly advantageous for high temperature thermoelectric application with good TE properties and superior stability in air. In a particular embodiment, there is presented a material with the general formula Zn 1-x-y Cd x Sc y O, where 0.05
Abstract:
A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials.
Abstract:
A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials.
Abstract:
A process for preparing alloy products powders is described using a self-sustaining or self -propagating SHS-type combustion process. Binary, ternary and quaternary alloy having cadmium, selenium and optionally a third element X or Y selected from Group VIA (such as S or Te) or from group IIB (such as Zn or Hg). The alloy products may be doped or not with a wide variety of other elements. The process involves heating to ignition, maintaining an elevated temperature less than melting for homogenization, followed by cooling and crushing An optional de-oxidation process may follow to further purify the alloy and balance the stoichiometry.
Abstract:
There is presented an n-type semiconductor which may be useful as a TCO material : gallium doped zinc cadmium oxide (which may be interchangeably referred to as: Ga-doped ZnCdO) with the general formula Zn 1-x-y Cd x Ga y O, where x and y may in a particular embodiment be given by, e.g., 0.05