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    METHOD AND APPARATUS FOR DEPOSITION CLEANING IN A PUMPING LINE
    1.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITION CLEANING IN A PUMPING LINE 审中-公开
    用于在泵送管线中沉积清洁的方法和设备

    公开(公告)号：WO2017123704A1

    公开(公告)日：2017-07-20

    申请号：PCT/US2017/013114

    申请日：2017-01-12

    Applicant: MKS INSTRUMENTS, INC.

    Inventor： HILL, Gordon ,  BENEDICT, Scott ,  WENZEL, Kevin

    IPC: H01J37/32

    CPC classification number: C23C16/513 ,  F16K1/22 ,  F16K3/06 ,  F16K15/026 ,  F16K51/02 ,  H01J37/32348 ,  H01J37/32844 ,  Y02C20/30

    Abstract: A vacuum pumping line plasma source is provided. The plasma source includes a body defining a generally cylindrical interior volume extending along a central longitudinal axis. The body has an input port for coupling to an input pumping line, an output port for coupling to an output pumping line, and an interior surface disposed about the generally cylindrical interior volume. The plasma source also includes a supply electrode disposed adjacent to a return electrode, and a barrier dielectric member, a least a portion of which is positioned between the supply electrode and the return electrode. The plasma source further includes a dielectric barrier discharge structure formed from the supply electrode, the return electrode, and the barrier dielectric member. The dielectric barrier discharge structure is adapted to generate a plasma in the generally cylindrical interior volume.

    Abstract translation: 提供真空泵送线等离子体源。 等离子体源包括限定沿着中心纵向轴线延伸的大致圆柱形内部体积的主体。 本体具有用于耦合到输入泵送线路的输入端口，用于耦合到输出泵送线路的输出端口以及围绕大致圆柱形内部容积设置的内表面。 等离子体源还包括与返回电极相邻设置的供应电极以及阻挡介质部件，阻挡介质部件的至少一部分位于供应电极和返回电极之间。 等离子体源还包括由供应电极，返回电极和阻挡电介质构件形成的电介质阻挡放电结构。 介质阻挡放电结构适于在大致圆柱形的内部容积中产生等离子体。

    에틸렌 처리장치 및 이를 이용한 에틸렌 처리방법
    2.
    发明申请
    에틸렌 처리장치 및 이를 이용한 에틸렌 처리방법 审中-公开
    乙烯处理装置和乙烯处理方法

    公开(公告)号：WO2016064211A1

    公开(公告)日：2016-04-28

    申请号：PCT/KR2015/011185

    申请日：2015-10-22

    Applicant: 한국기초과학지원연구원

    Inventor： 목영선 ,  트린쿠앙 홍 ,  유석재

    IPC: A23B7/015

    CPC classification number: A23B7/015 ,  H01J37/32036 ,  H01J37/32348 ,  H01J37/32844 ,  H05H1/24

    Abstract: 본 발명은 유입구 및 배출구가 형성되며, 내부에 흡착제가 충진되는 플라즈마 방전부; 및 상기 플라즈마 방전부의 내부에 플라즈마를 발생시키는 전극부;를 포함하며, 상기 흡착제는 촉매가 담지되어 있는 것을 특징으로 하는 에틸렌 처리장치에 관한 것이다. 본 발명은 상기 에틸렌 처리장치를 이용하여, (a) 상기 흡착제가 충진된 플라즈마 방전부 내에 에틸렌을 함유한 가스를 주입시키는 단계; (b) 상기 전극부에 전압을 인가하고, 상기 플라즈마 방전부 내에 플라즈마를 발생시켜 주입된 에틸렌을 분해하는 단계; 및 (c) 상기 플라즈마 방전부를 냉각시키는 단계; 를 포함하는 에틸렌 처리방법에 관한 것이다.

    Abstract translation: 乙烯处理装置技术领域本发明涉及一种乙烯处理装置，包括：具有入口和出口并填充有吸附剂的等离子体排出部分; 以及用于在等离子体放电部分内产生等离子体的电极部件，其中所述吸附剂具有负载在其上的催化剂。 本发明涉及使用乙烯处理装置的乙烯处理方法，该方法包括以下步骤：（a）将含乙烯气体注入装有吸附剂的等离子体放电部分; （b）向电极部分施加电压并在等离子体放电部分产生等离子体，从而降低注入的乙烯; 和（c）冷却等离子体放电部分。

    POST-CHAMBER ABATEMENT USING UPSTREAM PLASMA SOURCES
    3.
    发明申请
    POST-CHAMBER ABATEMENT USING UPSTREAM PLASMA SOURCES 审中-公开
    使用UPSTREAM等离子体源的后室退房

    公开(公告)号：WO2016022233A1

    公开(公告)日：2016-02-11

    申请号：PCT/US2015/038603

    申请日：2015-06-30

    Applicant: APPLIED MATERIALS, INC.

    Inventor： WANG, Rongping

    IPC: H01L21/02 ,  H01L21/205 ,  H01L21/3065

    CPC classification number: C23C16/4412 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32844 ,  Y02C20/30

    Abstract: Embodiments of the disclosure relate to a remote plasma source for cleaning an exhaust pipe. In one embodiment, an apparatus includes a substrate processing chamber, a pump positioned to evacuate the substrate processing chamber, and an abatement system. The abatement system comprises a plasma gas delivery system positioned between the substrate processing chamber and the pump, the gas delivery system having a first end coupling to the substrate processing chamber and a second end coupling to the pump, a reactor body connected to the gas delivery system through a delivery member, a cleaning gas source connected to the reactor body, and a power source positioned to ionize within the reactor body a cleaning gas from the cleaning gas source. Radicals and species of the cleaning gas react with post-process gases from the substrate processing chamber to convert them into a environmentally and process equipment friendly composition before entering the pump.

    Abstract translation: 本公开的实施例涉及一种用于清洁排气管的远程等离子体源。 在一个实施例中，一种装置包括基板处理室，定位成抽空基板处理室的泵和减排系统。 减排系统包括位于基板处理室和泵之间的等离子体气体输送系统，气体输送系统具有连接到基板处理室的第一端和连接到泵的第二端，与气体输送连接的反应器主体 系统，通过传送构件，连接到反应器主体的清洁气体源，以及定位成在反应器主体内离开来自清洁气体源的清洁气体的电源。 清洁气体的基团和物质与来自基底处理室的后处理气体反应，以在进入泵之前将其转化成环境和加工设备友好的组合物。

    CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION
    4.
    发明申请
    CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION 审中-公开
    具有均匀流动和等离子体分布的室

    公开(公告)号：WO2011059891A2

    公开(公告)日：2011-05-19

    申请号：PCT/US2010/055617

    申请日：2010-11-05

    Applicant: APPLIED MATERIALS, INC. ,  PALAGASHVILI, David ,  WILLWERTH, Michael, D. ,  ERENSTEIN, Alex ,  LIU, Jingbao

    Inventor： PALAGASHVILI, David ,  WILLWERTH, Michael, D. ,  ERENSTEIN, Alex ,  LIU, Jingbao

    CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32816 ,  H01J37/32844

    Abstract: Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.

    Abstract translation: 本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。 在一些实施例中，递归衬垫系统可以包括外部衬套，外部部分被配置成对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

    PLASMA REACTOR
    5.
    发明申请
    PLASMA REACTOR 审中-公开
    等离子体反应器

    公开(公告)号：WO2009010792A2

    公开(公告)日：2009-01-22

    申请号：PCT/GB2008/050569

    申请日：2008-07-14

    Applicant: EDWARDS LIMITED ,  KNIGHT, Gary, Peter ,  CHAMBERS, Andrew

    Inventor： KNIGHT, Gary, Peter ,  CHAMBERS, Andrew

    IPC: H01J37/32 ,  H05H1/24

    CPC classification number: H01J37/32844 ,  H05H2245/1215 ,  Y02C20/30

    Abstract: A plasma reactor comprises a reaction chamber and an inlet head connected to the reaction chamber. The inlet head comprises an open end connected to the reaction chamber, a plasma inlet located opposite to the open end, an inner surface tapering from the open end towards the plasma inlet, and first and second gas inlets each located between the plasma inlet and the open end. A plasma torch injects a plasma stream into the reaction chamber through the plasma inlet, which is shaped to cause the plasma stream to spread outwardly towards the first and second gas inlets. This shaping of the inlet head and the plasma inlet can enable the plasma stream to impinge upon gas streams as they exit from the gas inlets and thereby cause a significant proportion of at least one component of the gas streams to be reacted before the gas streams begin to mix within the chamber.

    Abstract translation: 等离子体反应器包括反应室和连接到反应室的入口头。 入口头包括连接到反应室的开口端，与开口端相对的等离子体入口，从开口端朝向等离子体入口渐缩的内表面，以及分别位于等离子体入口和等离子体入口之间的第一和第二气体入口 开口端。 等离子体焰炬通过等离子体入口将等离子体流注入反应室，等离子体入口成形为使等离子体流向第一和第二气体入口向外扩散。 入口头和等离子体入口的这种成形可以使等离子体流在气流从气体入口排出时撞击气流，从而在气体流开始之前使气流中的至少一个组分的重要比例反应 在房间内混合

    APPARATUS FOR TREATING A GAS IN A CONDUIT
    7.
    发明申请
    APPARATUS FOR TREATING A GAS IN A CONDUIT 审中-公开
    用于处理气体的装置

    公开(公告)号：WO2015183479A1

    公开(公告)日：2015-12-03

    申请号：PCT/US2015/029068

    申请日：2015-05-04

    Applicant: APPLIED MATERIALS, INC.

    Inventor： ZENG, Jibing ,  WEST, Brian T. ,  WANG, Rongping ,  GAJENDRA, Manoj A.

    IPC: C23C16/505 ,  H01L21/00

    CPC classification number: H01J37/3211 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32807 ,  H01J37/32834 ,  H01J37/32844 ,  H05H1/2406 ,  H05H1/30 ,  H05H2001/2468 ,  Y02C20/30

    Abstract: Apparatus for treating a gas in a conduit of a substrate processing system are provided. In some embodiments, an apparatus for treating a gas in a conduit of a substrate processing system includes: a dielectric tube to be coupled to a conduit of a substrate processing system to allow a flow of gases through the dielectric tube, wherein the dielectric tube has a conical sidewall; and an RF coil wound about an outer surface of the conical sidewall of the dielectric tube, the RF coil having a first end to provide an RF input to the RF coil, the first end of the RF coil disposed proximate a first end of the dielectric tube and a second end disposed proximate a second end of the dielectric tube. In some embodiments, the RF coil is hollow and includes coolant fittings to couple the hollow RF coil to a coolant supply.

    Abstract translation: 提供了用于处理基板处理系统的管道中的气体的装置。 在一些实施例中，用于处理衬底处理系统的导管中的气体的装置包括：电介质管，其被耦合到衬底处理系统的导管，以允许气体流过电介质管，其中介电管具有 锥形侧壁; 以及围绕所述电介质管的所述锥形侧壁的外表面缠绕的RF线圈，所述RF线圈具有第一端以向所述RF线圈提供RF输入，所述RF线圈的所述第一端靠近所述电介质的第一端设置 管和设置在电介质管的第二端附近的第二端。 在一些实施例中，RF线圈是中空的并且包括将中空RF线圈耦合到冷却剂供应的冷却剂配件。

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